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Manufacturing method of gallium doped zinc oxide target material

A manufacturing method and technology of zinc oxide, applied in the field of manufacturing gallium-doped zinc oxide targets using gel injection molding technology, can solve the problems of high cost and complicated preparation process, and achieve fast forming speed, low process cost and high density highly controllable effects

Inactive Publication Date: 2016-11-23
HANERGY CO INNO MOBILE ENERGY INVESTMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing gel injection molding technology, vacuum degassing and stirring of the slurry is generally required, which makes the preparation process complicated and the cost is high

Method used

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  • Manufacturing method of gallium doped zinc oxide target material
  • Manufacturing method of gallium doped zinc oxide target material
  • Manufacturing method of gallium doped zinc oxide target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] In this example, 9900 grams of zinc oxide powder and 100 grams of gallium oxide powder were weighed with a digital electronic balance. The raw material composition was 99 wt % zinc oxide and 1 wt % gallium oxide, the average particle size was 1 μm, and the powder purity was greater than 99.9 %, made into mixed raw material powder.

[0034] Fully dissolve pure water, acrylamide monomer, and N-N' dimethylbisacrylamide in a weight ratio of 100:10:1.5 to form a premix solution of 1975 grams.

[0035] Add 0.1wt% JA-281, which has no residue after sintering, as a dispersant to the premix, and adjust the pH to 9.5.

[0036] Add 60wt% of the raw material into the premix liquid and place it in a ball mill for 30 minutes, then put the remaining 40wt% of the raw material powder into the ball mill and continue ball milling for 24 hours, and use zirconia balls as the ball milling medium for the slurry in the ball mill. Ball milling prepares a slurry with a powder volume content of ...

Embodiment 2

[0044] In this example, 9800 grams of zinc oxide powder and 200 grams of gallium oxide powder were weighed with a digital electronic balance. The raw materials consisted of 98 wt% zinc oxide and 2 wt% gallium oxide, with an average particle size of 1 μm and a powder purity greater than 99.9 %, made into mixed raw material powder.

[0045] Fully dissolve pure water, acrylamide monomer, and N-N' dimethylbisacrylamide in a weight ratio of 100:15:2.5 to form 1975 grams of premix.

[0046] Add 0.1wt% JA-281, which has no residue after sintering, as a dispersant to the premix, and adjust the pH to 9.5.

[0047] Add 60wt% of the raw material into the premix liquid and place it in a ball mill for 30 minutes, then put the remaining 40wt% of the raw material powder into the ball mill and continue ball milling for 24 hours, and use zirconia balls as the ball milling medium for the slurry in the ball mill. Ball milling prepares a slurry with a powder volume content of 50%, that is, the s...

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Abstract

The invention relates to a manufacturing method of a gallium doped zinc oxide target material. The gel casting technology is used for manufacturing the gallium doped zinc oxide target material. The gallium doped zinc oxide target material with the compactness being 98% is manufactured through the steps of mixing, pulping, curing drying, green body machining, degreasing, sintering, machining and the like. According to the manufacturing method, the vacuum defoamation technology is omitted, so that the existing gel casting technological process is simplified, and the manufacturing cost is lowered.

Description

technical field [0001] The invention relates to a method for manufacturing a gallium-doped zinc oxide target, in particular to a method for manufacturing a gallium-doped zinc oxide target by using a gel injection molding technique. Background technique [0002] The transparent conductive film produced by magnetron sputtering is a necessary functional material for liquid crystal display, flat panel display, electrostatic shielding and solar cells. Gallium-doped zinc oxide (Ga 2 o 3 doped ZnO, GZO) targets are often used by the above industries for their high transmittance in near-infrared light. [0003] The DC magnetron sputtering method is currently the leading preparation process for transparent conductive films used in international high-conversion efficiency solar modules and high-end display devices. This process uses AZO semiconductor ceramics (2% Al2O3-98% ZnO) or ITO semiconductor ceramics (90% In2O3-10% SnO2) as the sputtering source, AZO or ITO transparent cond...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
Inventor 高明林俊荣杨本润
Owner HANERGY CO INNO MOBILE ENERGY INVESTMENT CO LTD
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