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Gallium doping device, gallium doping system and using method

A technology for connecting devices and powder mounting, applied in the field of gallium-doped devices, can solve the problems of waste of working hours and equipment, waste of working hours, etc.

Pending Publication Date: 2021-09-10
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, because gallium doping is currently carried out by expanding the wafer, gallium doping cannot be performed within a short period of time after wafer expansion due to high temperature, and it needs to be cooled before doping gallium, which results in waste of man-hours and requires a high level of operator; Doping with re-feeding, but this method is only suitable for re-doping before the completion of re-feeding, but if it is necessary to dope gallium separately, it will cause waste of man-hours and equipment

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Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0028] figure 1 It shows a schematic structural diagram of an embodiment of the present invention, and specifically shows the structure of this embodiment. This embodiment relates to a gallium doping device, a gallium doping system and a use method, which are used for doping gallium in the Czochralski single crystal process. Gallium, to improve the rapid attenuation of monocrystalline silicon conversion efficiency during use, use a gallium doping device to add gallium powder, the time of gallium doping is random, not limited by the crystal pulling time, and the method of doping gallium is simple, easy to operate, and reduces Gallium-doped man-hours.

[0029] A Ga-doped device, such as figure 1 As shown, it is used to hold gallium powder when Czochralski single crystal is doped with gallium. The gallium doping device includes a gallium cylinde...

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Abstract

The invention provides a gallium doping device, which comprises a gallium cylinder main body made of a silicon material and a connecting piece, wherein the gallium cylinder main body is provided with an accommodating cavity for accommodating gallium powder; and the connecting piece is made of a silicon material and is connected with the gallium cylinder main body so as to facilitate the hoisting. The gallium doping device has the advantages that the structure is simple, machining is easy, and the gallium doping process is convenient when the gallium doping device is used for gallium doping; and the gallium doping device is provided with the connecting piece, so that the gallium doping device is conveniently connected with a single crystal furnace heavy hammer through the connecting device, and the gallium doping device descends under the action of the single crystal furnace heavy hammer to perform gallium doping.

Description

technical field [0001] The invention belongs to the technical field of silicon single crystal production, and in particular relates to a gallium doping device, a gallium doping system and a use method. Background technique [0002] As one of the important materials in the field of new energy, monocrystalline silicon is the main material for making solar cells, but there is a decline in conversion efficiency during the use of solar cells. At present, it is generally believed in the industry that the reason for the decline in conversion efficiency is the current use of B-Si alloys. , in the post-processing process of monocrystalline silicon wafers, a B-0 complex is formed, which accelerates the attenuation of single crystal conversion efficiency. [0003] In this regard, gallium-doped single crystal silicon is proposed. Since gallium replaces boron, the B-0 complex is avoided, thereby improving the rapid decay of single crystal silicon conversion efficiency during use. Howeve...

Claims

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Application Information

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IPC IPC(8): C30B15/04C30B29/06
CPCC30B15/04C30B29/06
Inventor 杨志朱毅乌恩周泽王建平王林徐强高润飞郭志荣
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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