Gallium doping method of Czochralski silicon monocrystalline and doping device thereof

An element doping, polysilicon technology, applied in diffusion/doping, chemical instruments and methods, crystal growth, etc., can solve the problems of prolonged crystal pulling time, high equipment requirements, poor economic benefits, etc., and increase process costs. , the effect of reducing costs and reducing risks

Active Publication Date: 2010-07-28
ZHEJIANG HAINA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Patent 200810053398.X "Production method of gallium-doped solar single crystal" uses a special doping device, and has high requirements for equipment; and when doping, gallium is easy to splash out of silicon melt during the falling process. When the silicon melt splashes onto the wall of the quartz crucible, it will stick to the crucible wall after cooling, and the cooled silicon material will remelt during the crystal growth process, and when it falls into the silicon melt, the risk of poor crystal growth will increase; Fluctuations of the surface, resulting in single crystals can not be arranged in order of atomic number, resulting in broken bracts and dislocations
Moreover, the splashed melt may damage the single crystal furnace
[0009] Patent ZL00122075.6 "Heavily Doped Method for Czochralski Silicon Single Crystal Growth" uses an umbrella-shaped dopant, which is one-time use, and the evaporation coefficient of gallium is high. Extended, if the gallium volatilizes too much and needs supplementary doping, an additional umbrella dopant is required, which will lead to higher costs, so the economic benefit is not good

Method used

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  • Gallium doping method of Czochralski silicon monocrystalline and doping device thereof
  • Gallium doping method of Czochralski silicon monocrystalline and doping device thereof
  • Gallium doping method of Czochralski silicon monocrystalline and doping device thereof

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Embodiment 1

[0037] Embodiment 1, a kind of gallium element doping device, comprises the hanger 2 that is made of high-purity quartz and the annular fixing sleeve 3 and the hollow cone 4 that is caused by high-purity monocrystalline silicon; Outside the hollow cone 4 An annular groove is arranged on the surface, and the annular fixing sleeve 3 is stuck in the above-mentioned annular groove; thus, the hollow cone 4 is fixedly connected with the annular fixing sleeve 3 . The upper end of the suspension ring 2 is fixedly connected with the handle 1, and the lower end of the suspension ring 2 is fixedly connected with the annular fixed sleeve 3; the handle 1 is provided with a groove 11 matched with the seed chuck on the seed crystal rod.

[0038] The wall thickness of the cone tip of the hollow cone 4 (that is, from the cone top 41 to the distance from the cone top 41 to a height of 30mm) is 1mm, and the wall thickness of the remaining parts is 5mm; the taper is about 45 degrees.

Embodiment 2

[0039] Embodiment 2, the gallium element doping method of the Czochralski silicon single crystal carried out using the gallium element doping device described in embodiment 1, the following steps are carried out in sequence:

[0040] 1), at a room temperature of 25°C, weigh 290mg of gallium, and put 290mg of gallium into the inner cavity of the hollow cone 4 of the gallium element doping device;

[0041] 2) Place the quartz crucible in the hearth of the single crystal furnace, put 60kg of polysilicon into the quartz crucible, close the furnace cover, and raise the temperature to 1420°C to melt the polysilicon to a liquid state;

[0042]3), open the furnace door of the auxiliary chamber of the single crystal furnace, put the gallium element doping device obtained in step 1) into the auxiliary chamber, and fix the groove 11 with the seed crystal chuck in the auxiliary chamber; keep the polysilicon in this step is liquid;

[0043] 4), close the furnace door of the auxiliary cham...

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Abstract

The invention discloses a gallium doping device, comprising a flying ring (2), a ring-shaped fixed sleeve (3) and a hollow cone (4), wherein the flying ring (2) is made of high-purity quartz, the hollow cone (4) is made of high-purity monocrystalline silicon, the ring-shaped fixed sleeve (3) is connected with the hollow cone (14), one end of the flying ring (2) is connected with the ring-shaped fixed sleeve (3), the other end of the flying ring (2) is connected with a handle part (1), and the handle part (1) is provided with a groove (11) which is matched with a crystal seed chuck on a crystal seed rod. The invention also discloses a doping method of gallium of Czochralski silicon monocrystalline through the gallium doping device. The invention can effectively avoid the poor influence on crystal growing caused by the splash of silicon melt.

Description

technical field [0001] The invention relates to a method for doping a Czochralski silicon single crystal, in particular to a method for doping a gallium element suitable for a Czochralski silicon single crystal. Background technique [0002] At present, the P-type single crystal silicon materials used in the production of solar cells are mainly divided into two types: boron-doped and gallium-doped. For boron-doped Cz solar cells, when it is exposed to light, the performance of the battery will decay, that is, the phenomenon of light-induced attenuation. For gallium-doped solar cells, this light-induced attenuation is much smaller. Test data reported at home and abroad show that the attenuation efficiency of gallium-doped CZ solar cells is generally less than 1%, while the attenuation efficiency of boron-doped Cz solar cells is generally greater than 3%. [0003] However, because the segregation coefficient of gallium is too small and the evaporation coefficient is high, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/04
Inventor 郭兵健王飞尧何国君黄笑容肖型奎
Owner ZHEJIANG HAINA SEMICON CO LTD
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