46results about How to "No increase in process cost" patented technology

The invention relates to a low-attenuation and few-mode fiber. A core layer has three layers and comprises three claddings from inside to outside; the relative refractive index difference delta 1 of a first core layer is 0.34%-0.45%, R1 ranges from 4.5 mu m to 7.5 mu m, the relative refractive index difference delta 2 of a second core layer is 0.20%-0.29%, R2ranges from8 mu m to 10 mu m, the relative refractive index difference delta 3 of a third core layer is 0.15%-0.24%, R3 ranges from 10 mu m to 13 mu m, the relative refractive index difference delta 4 of a first cladding is minus 0.02%-0.02%, R4 ranges from14 mu m to 18 mu m, the second cladding is a concave cladding, the relative refractive index difference delta 5 of the second cladding is minus 0.8%-minus 0.4%, R5 ranges from19 mu m to 31 mu m, and a third cladding is a pure quartz glass layer. According to the low-attenuation and few-mode fiber, four stable transmission modes are supported within 1550 nm, small DGD is provided, the process is simple, and the manufacturing is easy; at the same time, the low-attenuation and few-mode fiber has low attenuation and better bending resistance.

The invention discloses a gallium doping device, comprising a flying ring (2), a ring-shaped fixed sleeve (3) and a hollow cone (4), wherein the flying ring (2) is made of high-purity quartz, the hollow cone (4) is made of high-purity monocrystalline silicon, the ring-shaped fixed sleeve (3) is connected with the hollow cone (14), one end of the flying ring (2) is connected with the ring-shaped fixed sleeve (3), the other end of the flying ring (2) is connected with a handle part (1), and the handle part (1) is provided with a groove (11) which is matched with a crystal seed chuck on a crystal seed rod. The invention also discloses a doping method of gallium of Czochralski silicon monocrystalline through the gallium doping device. The invention can effectively avoid the poor influence on crystal growing caused by the splash of silicon melt.

The invention discloses a naked eye 3D (Three Dimensional) touch device and a production method thereof and also discloses a display device which comprises the naked eye 3D touch device; the naked eye 3D touch device comprises a first substrate, a second substrate and a liquid crustal layer which is arranged between the first substrate and the second substrate; a surface of the first substrate, which is towards the liquid crystal layer, is sequentially provided with a public electrode, an insulating layer, slit electrode units and touch electrode units; the slit electrode units and the touch electrode units are oppositely arranged; the touch electrode units and the slit electrode units are arranged in an interval mode; every slit electrode unit comprises at least two slit electrodes; the touch electrode units comprise at least two touch electrodes; touch electrodes which are arranged in the same touch electrode unit are arranged in the same layer and insulated t each other. According to the naked eye 3D touch device, 3D display and touch are perfectly integrated and touch functions under 2D and 3D patterns are achieved under the premise that a 3D function is uniformly displayed.

The invention relates to a rapid photo detector, belonging to the electronic component technology. The rapid photo detector comprises a photodiode and an amplification circuit connected with the photodiode, wherein the photodiode comprises an N+ substrate 101, an N- epitaxial layer 102, anode metal electrodes 105 and a cathode metal electrode 106, the N- epitaxial layer 102 is arranged at the upper end surface of the N+ substrate 101, a P+ injection area 103 is arranged in the N- epitaxial layer 102, and an anti-reflection coating 104 and the anode metal electrodes 105 are arranged at the upper end surface of the P+ injection area; and the amplification circuit is composed of multiple NMOS tubes 108 and PMOS tubes 109. The rapid photo detector is characterized in that a light shield layer is arranged between the photodiode and the amplification circuit, and the light shield layer is used for shielding light for non photosensitive areas. The rapid photo detector has the advantages that the generation condition for slow photo-generated carriers is fundamentally eliminated, and the response speed of the photo detector is greatly increased.

The invention provides a lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plates. The lateral double-diffused metal oxide semiconductor field effect transistor comprises a field oxide layer and a drift region located at the lower part of the field oxide layer, wherein the surface of the field oxide layer is provided with a plurality of adjustable field plates; two adjacent adjustable field plates are spaced at a set distance; and each adjustable field plate is connected with a regulating capacitor. Inductive charge quantity and inductive potentialon each adjustable field plate can be adjusted through adjusting the sizes of the adjustable field plates and positive and negative electrodes of the regulating capacitor, so that uniform surface transverse electric field distribution is obtained in the drift region. According to the lateral double-diffused metal oxide semiconductor field effect transistor, the surface transverse electric field distribution of the drift region can be improved and the lateral double-diffused metal oxide semiconductor field effect transistor has very high lateral voltage endurance capability and very low on-resistance.

The invention relates to the technical field of dental orthodontics, and specifically discloses an invisible appliance production method. The invisible appliance production method comprises the following steps of: providing a diaphragm for making an invisible appliance; arranging a layer of process film on the outer surface of the diaphragm; placing the diaphragm and one surface opposite to the outer surface provided with the process film on a dental model for film pressing to obtain the invisible appliance to be cut; performing laser cutting on the invisible appliance to be cut along a predetermined cutting path, wherein laser is incident from one side of the process film, the laser cuts through the process film and the diaphragm simultaneously, and the diaphragm and the process film arenot mixed at the cutting path; and removing the process film to obtain the invisible appliance. The invisible appliance production method solves the adverse effect on the quality of the appliance caused by smoke dust generated in the laser cutting process of the existing invisible appliance production.

The invention relates to a memory and a forming method thereof, and the memory comprises: a first base which comprises a first substrate, wherein a storage array formed on the front surface of the first substrate, and a first dielectric layer covering the storage array; a second base which comprises a second substrate, a logic circuit formed on the front surface of the second substrate and a second dielectric layer covering the logic circuit; and a metal heat dissipation line which is formed in the first dielectric layer and/or the second dielectric layer, wherein the first base and the secondbase are connected in a stacked and bonded mode. The storage density of the memory is improved.

The embodiment of the invention discloses a wet chemical cleaning method. The wet chemical cleaning method comprises the following steps of: providing a semiconductor wafer, wherein the surface of the wafer comprises an exposed silicon region; contacting the wafer with a solution with an oxidation effect and forming an oxidation layer on the surface of the wafer; and washing the wafer with the oxidation layer by using deionzied water. By the method, one thin oxidation layer is formed on the surface of the semiconductor wafer and silicon exposed on the surface of the wafer is prevented from being directly contacted with the deionized water, so that when the wafer is washed by using the deionized water, no exposed silicon is dissolved into water, the silicon is not separated out in the subsequent drying process and the possibility of forming water track on the surface of the semiconductor wafer is reduced. According to the method, the solution with the oxidation effect in the conventional production process can be adopted, so the process cost is reduced.

The invention relates to a dyeing process taking active emerald blue as a main material. The dyeing process comprises the following steps that 1) to-be-dyed cloth is added into a dyeing machine, the to-be-dyed cloth is enabled to be soaked in water, and then the dyeing machine is operated; 2) dye and anhydrous sodium sulphate are separately added into the dyeing machine; and 3) alkali is added into the dyeing machine; wherein the steps satisfy the following conditions that (1) the dye comprises the active emerald blue; (2) a bath ratio of the to-be-dyed cloth to dye liquor is 1:(6 to 8), wherein the dye liquor is composed of the dye and the water, a weight of the dye is equal to or more than 1% of a weight of the to-be-dyed cloth, a dosage of the anhydrous sodium sulphate is 30 g/L to 70 g/L, and a dosage of the alkali is 15 g/L to 20 g/L; (3) after the anhydrous sodium sulphate is added, the anhydrous sodium sulphate can be uniformly distributed on the to-be-dyed cloth and in the water; and (4) after the alkali is added, the dye can be fixed on the to-be-dyed cloth. According to the process, other auxiliaries do not need to be added, dyeing defects can be effectively reduced onlyby adjusting the adding sequence and proportion of the dye, the anhydrous sodium sulphate and the alkali, the process complexity and the cost cannot be increased, even the process can be simplified, the cloth cover quality can be improved, and the dyeing effect is stable and reliable.