47results about How to "Reduce the likelihood of forming" patented technology

The invention provides a treatment method and equipment of high-salt waste water. The treatment method comprises the steps that A, agents are added to the high-salt waste water for pretreatment to reduce hardness, and then nanofiltration softening treatment is carried out to obtain a first separating medium and a first concentrated solution; B, the first separating medium is further purified to obtain pure water to be reused, and the first concentrated solution is returned to the step A to carry out agent adding pretreatment on the high-salt waste water as part of the agents to reduce the hardness. The treatment equipment comprises an agent adding pretreatment device, a nanofiltration softening device and a purifying device. The nanofiltration softening device comprises a first water inlet, a first concentrated solution outlet and a first separating medium outlet, the first concentrated solution outlet is connected with the agent adding pretreatment device, and the first separating medium outlet is connected with the purifying device. The treatment method has the advantages that the method is simple and convenient to operate, water produced through nanofiltration is recycled, the quantity of the added agents is reduced, pollution caused by discharging to environment is avoided, full environment friendliness is achieved, the waste water treatment capacity is high, and waste water zero discharging can be achieved.

The invention discloses a preparation method of an inoculant for a thin-wall quenching part. The preparation method comprises the following steps: uniformly mixing 70-80% of Si, 0.6-1% of Sr, 0-3% of Ba, 0.9-1.4% of Al, 0-0.7% of Ca, 0.5-1% of a carburant and the balance of Fe and inevitable trace elements to obtain a mixture; smelting, cooling, pouring, quenching and crushing the mixture; mixing the mixture with Fe3O4 powder; and pressing, clustering and crushing the mixture and the Fe3O4 powder. The invention further discloses an application of the inoculant for the thin-wall quenching part. The inoculant for the thin-wall quenching part provided by the invention can be adopted to improve comprehensive properties of the thin-wall quenching part, and improves inoculation efficiency.

The invention discloses a nodular cast iron inoculant which comprises the following components in percentage by weight: 60-65% of Si, 3.5-6.0% of Zr, 1-2% of Ca, 0-1.4% of Al, 0.5-1.5% of Fe3O4, and the balance of Fe and inevitable minor elements. The nodular cast iron inoculant disclosed by the invention can improve the comprehensive properties of the nodular cast iron and enhance the inoculation efficiency.

The invention discloses a heat-resistant regeneration die-cast aluminum alloy and a preparation method thereof, and belongs to the field of regeneration die-cast aluminum alloy preparation. The invention provides the heat-resistant regeneration die-cast aluminum alloy capable of reducing the preparation cost and the preparation method of the heat-resistant regeneration die-cast aluminum alloy. Chemical components of the heat-resistant regeneration die-cast aluminum alloy include 10.0%-12.0% of Si, 0.50%-0.75% of Ni, 0.95%-1.35% of Mg, 0.9%-1.4% of Fe, 0.20%-0.30% of Mn, 0.08%-0.12% of Cr, 0.015%-0.03% of B, smaller than or equal to 0.15% of an impurity element and the balance Al. The preparation method includes the steps that smelting is conducted; sampling is conducted to adjust the alloycomponents; refining is conducted after low-melting-point alloy addition; slag removal is conducted; and casting is conducted. According to the heat-resistant regeneration die-cast aluminum alloy andthe preparation method, Ni and Cu are replaced with the low-cost impurity element Fe, and the alloy cost is effectively reduced; and by means of the compound modification technology of the Mn, the Cr, the B and the like, the size of the iron-rich phase is refined, and the high-temperature strength of the alloy is ensured.

The invention relates to a method for measuring the material level of a storage tank in the production of trichlorosilane, which belongs to the production field of halogenated silicane. The invention solves the technical problem of providing the method for measuring the material level of the storage tank in the production of the trichlorosilane, and the method is free from the interference of floating dust. The method for measuring the material level of the storage tank in the production of the trichlorosilane measures the material level of the storage tank which is connected with a pipeline, and calculates the material level L of a material in the storage tank according to a formula L=m/(Sp) by measuring the total mass m of the storage tank and the material in the storage tank, wherein S is the cross-section area of the storage tank, and p is the stacking density of the material. The method can avoid the influence of the floating dust on a detection result, can measure the material level of the material in the storage tank more accurately, is beneficial to replenishing silicon powder or eliminating silicon dust in time, can effectively reduce the generation of production accidents and has extensive application prospect.

The invention provides a manufacturing method of a semiconductor structure with device isolation areas. The method includes the steps of providing a semiconductor substrate; forming first groves in the semiconductor substrate, filling the first grooves with first insulating layers, and making the first insulating layers exposed out of the upper surface of the semiconductor substrate; making an epitaxial layer grow on the upper surface of the semiconductor substrate, wherein the epitaxial layer covers the whole upper surface of the semiconductor substrate; etching the epitaxial layer to form second grooves which make the first insulating layers exposed, wherein the width of the second grooves is smaller than the width of the first grooves; filling the second grooves with second insulating layers, and forming the device isolation areas through the first insulating layers and the second insulating layers. The invention further provides the corresponding semiconductor structure. By means of the manufacturing method and the semiconductor structure, the stability of the work of semiconductor devices can be improved, and the work performance of the semiconductor devices can be improved as well.

The embodiment of the invention discloses a wet chemical cleaning method. The wet chemical cleaning method comprises the following steps of: providing a semiconductor wafer, wherein the surface of the wafer comprises an exposed silicon region; contacting the wafer with a solution with an oxidation effect and forming an oxidation layer on the surface of the wafer; and washing the wafer with the oxidation layer by using deionzied water. By the method, one thin oxidation layer is formed on the surface of the semiconductor wafer and silicon exposed on the surface of the wafer is prevented from being directly contacted with the deionized water, so that when the wafer is washed by using the deionized water, no exposed silicon is dissolved into water, the silicon is not separated out in the subsequent drying process and the possibility of forming water track on the surface of the semiconductor wafer is reduced. According to the method, the solution with the oxidation effect in the conventional production process can be adopted, so the process cost is reduced.

The invention discloses a grey cast iron inoculant. The formula of the grey cast iron inoculant comprises the following components in percentage by weight: 66-70% of Si, 1-3% of Zr, 1-2% of Ca, 0-2.5% of Mn, 0.5-1.5% of Fe3O4 and the balance of Fe and inevitable trace elements. By adopting the grey cast iron inoculant disclosed by the invention, the comprehensive performance of the grey cast iron can be improved, and the inoculating efficiency is improved.

The invention provides dimer ester micromolecule PROTACs for inducing MDM2 to self-degrade E3 ubiquitin ligase. The structure of the PROTACs is shown in the specification, wherein in a compound (I), L1 is C1-C30 linear or branched alkyl with or without a substituent group, and any carbon atom in L1 is optionally replaced by heteroatom; R1, R2, R3 and R4 are C1-C30 linear or branched alkyl with orwithout a substituent group, C1-C30 aryl with or a without substituent group, C1-C30 linear or branched alkylaryl with or without a substituent group or C1-C30 linear or branched aryl alkyl with or without a substituent group respectively and independently; X1, X2, X3 and X4 are halogen respectively and independently.

The invention provides an aneurysm blocking device which is formed by an elastic net-shaped body, the near end of the elastic net-shaped body is folded inwards in the radial direction to be connected with a near-end marking part, the far end of the elastic net-shaped body is folded inwards in the radial direction to be connected with a far-end marking part and folded reversely, the far end of the elastic net-shaped body where the far-end marking part is located extends into the elastic net-shaped body, a double-layer net structure formed through reverse folding forms an expansion part elastic net-shaped body, a single-layer net structure which is not reversely folded forms a neck elastic net-shaped body, and in the self-expansion state, the radial size of the expansion part elastic net-shaped body is gradually increased from the near end to the far end or is increased firstly and then reduced. According to the blocking device capable of effectively treating the aneurysm, the problems that in the prior art, the blocking effect is poor, the operation cost is high, and the operation difficulty is large are solved, the possibility of arterial thrombosis can be reduced, and the risk that the aneurysm top is weak and prone to being broken is reduced.

The invention provides textile finishing resin and a preparation method thereof. The structural formula of the textile finishing resin is as shown in the specification, wherein R1 is (CH2)n (n is equal to 0 or 3), and R2 is H, (CH2)n (n is equal to 1-3), or (CH2)mO(CH2)nH (m is equal to 1 or 2, and n is equal to 1 or 2). The preparation method comprises the following steps: glycolamide, dialdehyde and water are mixed, react for 3-5 hours under the conditions that the temperature is 50-70 DEG C and the pH value is 7.5-8, and then react for 3-5 hours under the conditions that the temperature is 30-60 DEG C and the pH value is 5-6.5, an alcohol compound is added after reduced pressure distillation, a reaction lasts for 3 hours under the conditions that the temperature is 40-50 DEG C and the pH value is 2.5-3, the pH value is adjusted to be 5.5-6.5 after the reaction is ended, and water is used for adjusting the solid content to obtain the textile finishing resin. According to the method, formaldehyde is not used as a raw material, which meets relevant standards and environmental protection requirements; used raw materials are simple, easy to obtain and cheap; in addition, after being applied to non-iron finishing of cotton fabrics, the resin prepared with the method reaches high non-iron level and low yellowing degree.

The invention, belonging to photoelectric material technology field, relates the new-type polyarylradicalacetylene luminescent material containing polyploidy sesquialter silicon hydride and preparing method. The invention uses fluorenes, thiophene, benzene, dehydrobenzene, carbazole and many kinds of polyploidy sesquialter silicon hydride as raw materials, and uses organic reaction to synthesize the polyarylradicalacetylene luminescent material containing polyploidy sesquialter silicon hydride which is organic/inorganic hybridization nano material. Due to the existence of polyploidy sesquialter silicon hydride, it is effective to stop the formation of aggregation, so the organic polymer material possesses the good organic polymer and spectroscopic stability. The organic/inorganic hybridization luminescent material possesses the high quantum efficiency and luminescent heat endurance. The material can be used to prepare organic light-emitting diode and other electron devices.

The invention discloses a graphene ceramic tile burning method. The burning method comprises the following steps: compounding 35 parts of potassium feldspar, wollastonite, spodumene, alundum powder, attapulgite, diatomite, yellow phosphorite slag and the like to obtain a raw material of graphene ceramic tiles; controlling the moisture of silica sol to obtain a wet blank and a dry blank in sequence; finally, sintering. During sintering, condensation occurs among silanol groups on the surfaces of colloidal particles in order to drive the components of the graphene ceramic tiles to get close andgather, gaps among the components are filled with the colloidal particles, and the colloidal particles are bonded through chemical bonds (Si-O-Si) to form a stable space network structure, so that thecomponents are firmly combined together, the pore forming probability is lowered greatly, the porosity is lowered remarkably, and graphene ceramic tiles with low water absorption can be obtained.

The invention relates to the field of electronic materials, and in particular to a semimetal/semiconductor Schottky junction, a method for fabricating the same, and a Schottky diode. The semimetal/semiconductor Schottky junction comprises a semiconductor layer and a semimetal layer, wherein a Schottky contact is formed between the semiconductor layer and the semimetal layer; and a compound formingthe semimetal layer is a compound composed of a rare earth element and a group VA element. The semimetal/semiconductor Schottky junction has good thermal stability at an interface between the semiconductor layer and the semimetal layer. The Schottky diode based on the semimetal/semiconductor Schottky junction has an ideal factor of about 1.05, noise equivalent power that can be reduced to the order of pW/Hz1/2 or even sub-pW/Hz1/2, and sensitive detection performance.

The invention discloses a high formability and low-chromium ferrite stainless steel and a making method thereof, the high formability and low-chromium ferrite stainless steel comprises the following chemical components by weight: less than or equal to 0.015% of C, 0.010-0.35% of Si, 0.015-0.25% of Mn, 9.5-11% of Cr, 0.15-0.20% of Ti, less than or equal to 0.025% of P, less than or equal to 0.002% of S, less than or equal to 0.010% of N, less than or equal to 0.025% of (C + N), 0.0010-0.0050% of Ca, less than or equal to 0.05% of Al, greater than or equal to 6 (C + N) of Ti, and balance of Fe and inevitable impurities, wherein the impurity element Ni content is less than or equal to 0.3%, Cu content is less than or equal to 0.3%, O content is less than or equal to 0.0050%, and the content of Ni+0.5Cu is less than or equal to 0.35%, and the total amount of other impurity elements is less than 0.05% of. The formability is improved by reduction of hardness and strength by reduction of the Cr, Si and Mn content and control of solid solution amount of the Cr, Si and Mn in the steel to reduce the solid solution strengthening effect; by strict control of the content of Ni and Cu, the possibility of the martensite phase formation is reduced to reduce the hardness and strength of the stainless steel to improve the formability. By control of mixed use ratio of molten iron and scrap steel, the content of the impurity elements Ni and Cu in the steel, the influence of the impurity elements Ni and Cu on the hardness and strength and other properties can be ultimately controlled.