Semiconductor structure with device isolation areas and manufacturing method of semiconductor structure

Abstract

The invention provides a manufacturing method of a semiconductor structure with device isolation areas. The method includes the steps of providing a semiconductor substrate; forming first groves in the semiconductor substrate, filling the first grooves with first insulating layers, and making the first insulating layers exposed out of the upper surface of the semiconductor substrate; making an epitaxial layer grow on the upper surface of the semiconductor substrate, wherein the epitaxial layer covers the whole upper surface of the semiconductor substrate; etching the epitaxial layer to form second grooves which make the first insulating layers exposed, wherein the width of the second grooves is smaller than the width of the first grooves; filling the second grooves with second insulating layers, and forming the device isolation areas through the first insulating layers and the second insulating layers. The invention further provides the corresponding semiconductor structure. By means of the manufacturing method and the semiconductor structure, the stability of the work of semiconductor devices can be improved, and the work performance of the semiconductor devices can be improved as well.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure with device isolation regions and a manufacturing method thereof. Background technique [0002] With the development of semiconductor structure manufacturing technology, integrated circuits with higher performance and stronger functions require greater component density, and the size, size and space of each component, between components or each component itself also need to be further reduced. No matter how the size of the component changes, proper insulation or isolation between individual components is still required to obtain stable component properties. [0003] Among the existing component isolation technologies, the technology of forming shallow trench isolation (STI) is more commonly used, and its advantages include: it can form a smaller isolation region, and in addition, the semiconductor substrate can be kept flat after the isolation ...

AI Technical Summary

Problems solved by technology

However, in order to meet the requirements of aspect ratio and other requirements in the existing STI forming technology, it is impossible to reduce the width W to a very small one.

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