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Shower head and vapor deposition equipment

A shower head and epitaxial deposition technology, applied in the direction of chemical reactive gas, single crystal growth, polycrystalline material growth, etc., to achieve the effect of improving film formation quality and process yield, and reducing possibility

Inactive Publication Date: 2013-09-25
光垒光电科技(上海)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a shower head and vapor deposition equipment to alleviate or solve the problem that the shower head is easy to form defects on the substrate in the prior art, and improve the yield of the MCOVD process

Method used

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  • Shower head and vapor deposition equipment
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Embodiment Construction

[0012] The shower head and vapor deposition equipment provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0013] Please refer to figure 1 , the present invention provides a shower head, which is mainly used for epitaxially depositing III-V materials, for example, for epitaxially depositing GaN film layers; the shower head includes a shower head body 1, and The gas diffusion chamber in the shower head body 1, the gas diffusion chamber at least includes a Group III gas diffusion chamber 11 and a Group V gas diffusion chamber 12, preferably, the Group III gas diffusion chamber 11...

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Abstract

The invention discloses a shower head and vapor deposition equipment. The vapor deposition equipment comprises the shower head. According to the shower head and the vapor deposition equipment, a vapor outlet face of the shower head is a smooth surface and has high flatness, so that the attachment attaching capability of the vapor outlet face of the shower head is lowered greatly, and small particulate attachments, which are just formed on the vapor outlet face of the shower head, are separated from the vapor outlet face of the shower head and fall off during reaction; and the sizes of the attachments are small at the moment, the attachments can be decomposed by heat from a heater during falling and form gas again, and a film growing layer of a substrate can not be affected, so that the probability of forming impurity particles is reduced greatly, and film forming quality and process yield are improved.

Description

technical field [0001] The invention relates to semiconductor equipment, especially a shower head and vapor deposition equipment. Background technique [0002] The basic growth process of chemical vapor deposition, such as metalorganic chemical vapor deposition (MOCVD) process, is to introduce the reaction gas from the gas source into the reaction chamber, and use the substrate heated by the heater to initiate a chemical reaction, thereby forming a single crystal or polycrystalline film. In the MOCVD process, the reactants required for film growth rely on gas transport (such as flow and diffusion) to reach the growth surface. During the transport process, chemical reactions also occur. Finally, the growth particles are combined into the film lattice through adsorption and surface reactions. . The MOCVD equipment is the main equipment used to complete the MOCVD process. [0003] The epitaxial deposition of existing GaN thin films is usually done in MOCVD equipment through ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B25/14C30B28/14
Inventor 林翔丁大鹏
Owner 光垒光电科技(上海)有限公司
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