70 results about "Planar spiral inductors" patented technology

A tuner circuit includes a band selection filter coupled to receive an input RF signal and provide a band selected output signal where the band selection filter includes a bank of band pass filters. Each band pass filter includes an inductor and a variable capacitor forming an LC resonator where the inductor is an integrated planar spiral inductor. The tuner circuit further includes a frequency conversion circuit coupled to receive an input signal corresponding to the band selected output signal and provide a frequency converted output signal having a predetermined frequency. The integrated planar spiral inductor can be formed using a single metal spiral or multiple metal spirals. In a multi-spiral structure, a first metal spiral having an inward spiral pattern and a second metal spiral having an outward spiral pattern to form an inductor with large inductance, low series resistance and high Q values, even at low frequency.

The invention discloses a planar spiral inductor with wide-narrow-alternatingly line width and space, which can be used for an RF integrated circuit. The planar spiral inductor adopts the structure that a spiral inductive insulation layer is arranged on a silicon substrate; the metal thin film is coated on the insulation layer to etch an inductive bottom layer metal layer, so the insulation layeris deposited on the bottom layer metal layer; through holes are formed on the insulation layer so as to connect the bottom layer metal layer and the spiral inductor layer; and the metal thin film is coated on the insulation layer to etch a spiral inductive metal layer with a multi-turn coil; and the pattern of the coil is formed through conductive metal. According to the invention, the metal coilis alternately changed in width form the outer ring to the inner ring, whereas the space is alternately changed in width form the inner ring to the outer ring, thereby reducing the Ohm wastage causedby equivalent resistors connected in series, lowering the proximity effect of the metal wires, improving the quality factor Q value of the spiral inductor, increasing the mutual induction of the wirecoils, and also improving the inductance value of the spiral inductor.

The invention relates to the field of a pressure sensor, particularly a high-temperature ceramic pressure sensor for a pressure test in a high temperature environment and a processing method of the high-temperature ceramic pressure sensor. The effective pressure test can be implemented in a special high temperature environment for a long time. The high-temperature ceramic pressure sensor comprises a pressure sensing ceramic element, wherein a closed chamber is arranged inside the pressure sensing ceramic element; the upper and lower planes of the pressure sensing ceramic element are respectively provided with an electrode layer and a planar spiral inductor; the two electrode layers form a capacitor; and the capacitor is connected in series with the two planar spiral inductors to form an LC loop. The processing steps are as follows: a, curtain coating; b, punching; c, stacking and filling; d, laminating and thermal cutting; e, high-temperature sintering; f, printing and low-temperature sintering; and g, cavity sealing. The sensor and the method disclosed by the invention can design and realize a concrete structure of sensitive elements of the sensor at a totally new angle; the structure is ingenious and reasonable; and a passive wireless high-temperature ceramic pressure sensor for the detection in a noncontact wireless manner based on an LC resonance theory is realized, so that the pressure test can be performed for a long time at a high temperature higher than 300 DEG C.

The invention relates to a novel manufacturing method of a planar spiral inductor. Manufacturing of the planar spiral inductor is carried out through a glass or quartz substrate; manufacturing of the planar spiral inductor is achieved by an MEMS technology which comprises a metal thin film deposition process, a dielectric layer thin film deposition technology, a thick metal layer plating process, a thick resist lithography process, an etching process and the like; the planar spiral inductor and the substrate do not need to be isolated by a thick insulating layer; and the plane shape of the planar spiral inductor and the thickness of a coil are not limited. Manufacturing of the planar spiral inductor is achieved by the MEMS technology on the glass or quartz substrate; the coupling effect and the skin effect between the coil and the substrate at a high frequency are avoided; a high Q-value inductor can be achieved; meanwhile, the thickness of a metal layer of an inductance coil is not limited; and the loss of the coil is low. The technology is simple; the requirements of multiple fields of a signal isolator, a planar antenna, a microwave baseband line, a planar spiral inductor resonator and the like can be met; and the process difficulty is reduced.

A sensor for detecting one or more materials includes a substrate, a passivation layer formed on the substrate, a self-resonant structure and a high surface area material disposed on the passivation layer. The self-resonant structure includes a planar spiral inductor and a plurality of planar interdigitated capacitor electrodes disposed within the passivation layer. The planar spiral inductor includes an electrically conductive trace formed on the substrate in a planar spiral pattern having at least two turns and an inter-winding space between parallel segments of the electrically conductive trace. The plurality of planar interdigitated capacitor electrodes are electrically connected to the electrically conductive trace of the planar spiral inductor and formed on the substrate within the inter-winding space of at least one outermost turn of the planar spiral inductor. The high surface area material includes a conformal polymer coating to increase a sensitivity to the one or more materials.

The invention discloses a through-silicon-via technique based three-dimensional band-pass filter, which comprises a parallel-plate capacitor unit, a planar spiral inductor unit, a rewiring layer, a three-dimensional solenoid inductor unit and a soft magnetic ferrite unit. The three-dimensional band-pass filter realizes three-dimensional solenoid inductors through on-chip redundancy through siliconvia, and the occupied area of the three-dimensional solenoid inductors is remarkably reduced through the through silicon via in vertical arrangement and metal interconnection layers in horizontal arrangement; by adding of high-permeability soft magnetic ferrite into the three-dimensional solenoid inductors, permeability and inductance density of the three-dimensional solenoid inductors are further improved. The three-dimensional band-pass filter is excellent in high-frequency stop-band suppression characteristic and frequency selectivity and is up to 31.6% in relative bandwidth ratio and up to 100nH/mm<2> in inductor inductance density. The three-dimensional band-pass filter has advantages of small occupied area, low loss and compact size and is applicable to high-performance radio-frequency circuit design and application.

Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a spirally patterned conductor layer which terminates in a microelectronic structure within the center of the spirally patterned conductor layer. The spirally patterned conductor layer forms a planar spiral inductor, and the microelectronic structure formed within the center of the spirally patterned conductor layer further comprises a series of electrically interconnected sub-patterns. The method contemplates a microelectronic fabrication fabricated in accord with the method. The microelectronic fabrication is fabricated with optimal performance while occupying minimal microelectronic substrate area.

A multilayer helical wave filter having a primary resonance at a selected RF diagnostic or therapeutic frequency or frequency range, includes an elongated conductor forming at least a portion of an implantable medical lead. The elongated conductor includes a first helically wound segment having at least one planar surface, a first end and a second end, which forms a first inductive component, and a second helically wound segment having at least one planar surface, a first end and a second end, which forms a second inductive element. The first and second helically wound segments are wound in the same longitudinal direction and share a common longitudinal axis. Planar surfaces of the helically wound segments face one another, and a dielectric material is disposed between the facing planar surfaces of the helically wound segments and between adjacent coils of the helically wound segments, thereby forming a capacitance.

The invention discloses a micro-mechanical cantilever beam type pi type continuous reconfigurable microwave band-pass filter. The micro-mechanical cantilever beam type pi type continuous reconfigurable microwave band-pass filter comprises a planar spiral inductor, two identical MEMS variable planar plate capacitors and two identical MIM capacitors are symmetrically arranged at the left and right sides of the planar spiral inductor in sequence, wherein each MEMS variable planar plate capacitor is connected between a CPW signal wire and a ground wire in parallel while each MIM capacitor is connected with the CPW signal wire in series so as to make up a pi type topological structure with band-pass characteristics. The MEMS variable planar plate capacitors achieve different capacitances based on an electrostatic principle; the upper pole plate of each MEMS variable planar plate capacitor is an MEMS cantilever beam while the lower pole plate thereof is the CPW signal wire, wherein the MEMS cantilever beam stretches across the CPW signal wire, and a drive electrode is arranged near the CPW signal wire; an Si3N4 insulating medium layer covers each of the CPW signal wire under the MEMS cantilever beam and the drive electrode. The filter realizes the continuous tuning for the center frequency and the band width and has advantages of low loss, good out-of-band rejection, wide frequency band tuning and small chip area.

The invention relates to an acceleration sensor, in particular to a piezoresistive MEMS high-range acceleration sensor with no lead and a manufacturing method of the piezoresistive MEMS high-range acceleration sensor with no lead. The piezoresistive MEMS high-range acceleration sensor with no lead and the manufacturing method of the piezoresistive MEMS high-range acceleration sensor with no lead solve the problem that the application range of an existing piezoresistive MEMS high-range acceleration sensor is limited. The piezoresistive MEMS high-range acceleration sensor with no lead comprises a substrate, a closed cavity, a first cantilever beam, a second cantilever beam, a third cantilever beam, a fourth cantilever beam, a mass block, a planar spiral inductor, a first piezoresistor, a second piezoresistor, a first capacitor, a second capacitor, a first wire hole, a second wire hole, a third wire hole, a fourth wire hole, a first electric connecting wire, a second electric connecting wire, a third electric connecting wire, a fourth electric connecting wire and a fifth electric connecting wire. The piezoresistive MEMS high-range acceleration sensor with no lead is suitable of acceleration measurement.

The invention belongs to the technical field of temperature sensors and in order to address failure of current temperature sensors to accurately measure the temperature parameter under ultra-high temperature environment, provides an ultra-high temperature passive thin-film temperature sensor and a manufacturing method thereof. The ultra-high temperature passive thin-film temperature sensor herein includes a medium substrate and a planar spiral inductor. The planar spiral inductor is disposed on one side of the medium substrate and is provided with a stray capacitor. The planar spiral inductor and the stray capacitor constitute a LC resonance circuit. According to the invention, the sensor herein uses the LC resonance theory to obtain a signal in a wireless manner and prints a platinum to a high purity aluminum oxide ceramic substrate, and greatly expands the range of tests at high temperature. According to the invention, the sensor herein obviates the need for extra power supplies, can remote measure and read signals in a non-contact manner from long distance, can measure temperature in high-temperature and bad environment and enclosed environment. Further, according to the invention, the sensor herein has the characteristic of simple structure, easy preparation, and lower manufacturing cost compared with traditional sensor structures.

The invention discloses a micro-mechanical cantilever beam type four-state reconfigurable microwave band-pass filter. The micro-mechanical cantilever beam type four-state reconfigurable microwave band-pass filter has the same advantages of low loss, good out-of-band rejection and so on as the traditional reconfigurable band-pass filter, and moreover, because the micro-mechanical cantilever beam type four-state reconfigurable microwave band-pass filter uses a planar spiral inductor with smaller inductance, the chip area is smaller, the frequency band tuning is wide, and the filter is compatible with a gallium arsenide monolithic microwave integrated circuit. Two MIM capacitors which are connected between a CPW signal wire and a ground wire in parallel and two MIM capacitors which are connected to the CPW signal wire in series are symmetrically arranged at the left and right sides of the planar spiral inductor in sequence so as to form a basic structure of the microwave band-pass filter; the reconfigurable structure of the filter is composed of two MEMS cantilever beams and four MIM capacitors connected by leads. The MIM capacitors connected by leads are connected between the CPW signal wire and the ground wire in parallel through controlling an MEMS cantilever beam so as to change the values of the MIM capacitors which are connected with the left and right sides of the planar spiral inductor in parallel and realize the four-state center frequency and band width.

The invention discloses a micro-mechanical clamped beam type pi type continuous reconfigurable microwave band-pass filter. The micro-mechanical clamped beam type pi type continuous reconfigurable microwave band-pass filter uses a planar spiral inductor, two identical MEMS variable planar plate capacitors and two identical MIM capacitors are symmetrically arranged at the left and right sides of the planar spiral inductor in sequence, wherein each MEMS variable planar plate capacitor is connected between a CPW signal wire and a ground wire in parallel while each MIM capacitor is connected with the CPW signal wire in series so as to make up a pi type topological structure with band-pass characteristics. The MEMS variable planar plate capacitors achieve different capacitances based on an electrostatic principle; the upper pole plate of each MEMS variable planar plate capacitor is an MEMS clamped beam while the lower pole plate thereof is the CPW signal wire, wherein the MEMS clamped beam stretches across the CPW signal wire, two anchoring areas are located on the CPW ground wire, and a drive electrode is arranged at each of two sides of the CPW signal wire under the MEMS clamped beam. The micro-mechanical clamped beam type pi type continuous reconfigurable microwave band-pass filter realizes the continuous tuning for the center frequency and the band width and has advantages of low loss, good out-of-band rejection and wide frequency band tuning.

The invention relates to a high-inductance-value silica-based planar spiral inductor structure, and belongs to the technical field of semiconductor encapsulation. The structure comprises a planar spiral inductor (100) and a thin film silicon cap (200); a dielectric layer I (104), a magnetic film layer I (103), a passivation layer (102) and a silicon substrate (101) are sequentially arranged under an inductance coil (105a); a thin film silicon cap (200) provided with a magnetic film layer II (202) is covered on the planar spiral inductor (100) and connected with the planar spiral inductor (100) through an adhesive; and the magnetic film layer I (103) and/or the magnetic film layer II (202) consist(s) of a plurality of magnetic film bars perpendicular to the inductance coil. According to the invention, the magnetic film layer I, the magnetic film layer II and the adhesive form a complete magnetic return path from the center of the inductance coil to the outside, the design which is capable of reducing eddy current loss can obviously improve the inductance value, and a wafer level mode implementation process is adopted to allow the size of the planar spiral inductor to be smaller and the manufacturing cost to be lower.

A cable television diplexer and telephony module that can be employed in CATV data transmission systems to enhance performance levels and reduce manufacturing costs. The cable television diplexer and telephony module includes a printed circuit board substrate, and a diplexer having a low pass filter section and a high pass filter section, each of which has components mounted on the substrate. The respective low pass and high pass filter sections of the diplexer include one or more high Q value planar spiral inductors. Each spiral inductor includes a narrow track of metal disposed on the substrate and wound around a center to form a circular spiral curve having a plurality of turns. The spiral inductor may be fabricated on the substrate of the cable television diplexer and telephony module, or on a separate substrate, using a standard PCB fabrication process.

The invention belongs to the technical field of flexible pressure sensors, and particularly relates to a method for manufacturing a wireless passive flexible pressure sensor based on LC resonance. Themethod comprises the following steps: S1, printing an LC resonance circuit consisting of a planar spiral inductor and a planar interdigital capacitor on a flexible substrate; S2, coupling with a detection coil to generate resonant frequency; S3, when the pressure applied to the flexible substrate changes, causing the capacitance of the flexible substrate to change; and S4, changing the resonant frequency of the LC resonance circuit so as to realize wireless passive pressure detection. With application of the LC coupling mode, the sensor can realize wireless passive detection and is low in power consumption and long in service life; meanwhile, a polydimethylsiloxane (PDMS) flexible substrate is adopted so that the application in the aspects of wearable devices, electronic skin, medical detection and the like can be met; and the structure is simple and machining is easy.

The invention relates to an integrated optical waveguide electric field sensor and an electric field measurement system utilizing the same, and belongs to the technical field of electric field measurement. The electric field sensor provided by the invention is that an integrated optical waveguide Mach-Zehnder interferometer and a modulation electrode are manufactured on the surface of a lithium niobate wafer; a dipole antenna and a planar spiral inductor are manufactured on the surface of another lithium niobate wafer; the side surfaces of the two lithium niobate wafers are adhered together byusing an ultraviolet curing adhesive; the bottom surfaces of the two lithium niobate wafers are respectively adhered with retaining washers by using the ultraviolet curing adhesive; and the planar spiral inductor and the modulation electrode are connected by using a connecting wire. The electric field measurement system utilizing the integrated optical waveguide electric field sensor comprises apolarization-maintaining laser source, a polarization-maintaining optical fiber, the integrated optical waveguide electric field sensor, a single-mode optical fiber, a photoelectric detector, a transmission cable and a signal processing unit. The integrated optical waveguide electric field sensor provided by the invention can realize low-frequency electric field measurement through designing a planar spiral inductor loaded antenna.

The invention discloses a planar spiral inductor. The planar spiral inductor comprises a semiconductor substrate, a dielectric layer formed on the semiconductor substrate, a planar spiral inductor main body formed on the dielectric layer, and an insulating isolation structure which is formed in the semiconductor substrate and corresponds to the planar spiral inductor main body. The planar spiral inductor is provided with the insulating isolation structure which can reduce substrate loss of the planar spiral inductor; moreover, the process of the insulating isolation structure is compatible with a front-end process of a complementary metal oxide semiconductor (CMOS), preparation cost is not increased, and a quality factor of the planar spiral inductor is improved.

The invention discloses a wireless passive flexible pressure sensor based on double-layer asymmetric LC resonance. Two sides of a flexible substrate are each printed with an LC resonance circuit, theflexible substrate is of an asymmetric structure, and planar spiral inductors at two sides respectively adopt a clockwise direction from inside to outside and an anticlockwise direction from inside tooutside. A double-layer asymmetric LC resonance circuit structure is adopted, and the detection distance and sensitivity of the wireless passive sensor based on LC resonance can be optimized. By adopting the polydimethylsiloxane (PDMS) flexible substrate, the application of wearable devices, electronic skin, medical detection and the like can be met.

The invention relates to a micromechanical clamped beam type four-state reconfigurable microwave band-pass filter. A CPW (1) horizontally arranged, a planar spiral inductor (2), a first MIM capacitor (3), a second MIM capacitor (4), a third MIM capacitor (5), a fourth MIM capacitor (6), a fifth MIM capacitor (7), a sixth MIM capacitor (8), a seventh MIM capacitor (9), an eighth MIM capacitor (10), a first MEMS clamped beam (14) and a second MEMS clamped beam (15), wherein the first MIM capacitor (3) and the second MIM capacitor (4) are connected between a CPW signal line and a ground wire in parallel, the third MIM capacitor (5) and the fourth MIM capacitor (6) are connected to the CPW signal line in series, and the fifth MIM capacitor (7), the sixth MIM capacitor (8), the seventh MIM capacitor (9) and the eighth MIM capacitor (10) are connected through leads. When the MEMS clamped beams make contact with salient points (13) of the two leads (12) below the MEMS clamped beams, the MIM capacitors connected through the leads in front and in back of the CPW signal line can be connected with the CPW ground wire, the capacitance of the MIM capacitors connected in parallel on the left side and the right side of the planar spiral inductor can be changed, and therefore the change of center frequency with four states and bandwidth is achieved.

A multiplexer structure (500) includes a passive substrate (508). The multiplexer structure (500) may also include a high band filter (502) on the passive substrate. The high band filter (502) may include a 2D planar spiral inductor(s) (530, 540) on the passive substrate. The multiplexer structure (500) may further include a low band filter (504) on the passive substrate. The low band filter (504)may include a 3D through-substrate inductor (510, 520) and a first capacitor(s) on the passive substrate. The multiplexer structure (500) may also include a through substrate via(s) (VIA) coupling the high band filter (502) and the low band filter (504).