The present application relates to the field of
bulk acoustic wave resonators, and specifically relates to an
edge structure and a filter. The
edge structure comprises an edge protrusion structure provided between a bottom
electrode and a top
electrode of the
edge structure. The edge protrusion structure comprises a first protrusion layer and a second protrusion layer stacked in a direction away from a substrate. The first protrusion layer is formed of a material having a high
dielectric constant, and the second protrusion layer is formed of a material having a high acoustic resistance. Accordingly, the first protrusion layer should be located on the side close to the bottom
electrode, and the second protrusion layer should be located on the side close to the top electrode. In this way, due to the presence of a
metal material having high
acoustic impedance, a high
acoustic impedance mismatch can be achieved, thereby improving Rp. Moreover, due to the presence of the first protrusion layer, the
electric field intensity of a second functional region and a third functional region outside a
primary resonance region can be reduced, and secondary
resonance can be suppressed, enabling the curve below spurious to be smooth.