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3 results about "Thickness shear" patented technology

Strain localization into shear bands in metallic glasses is typically described as a mechanism that occurs at the nano-scale, leaving behind a shear defect with a thickness of 10–20 nm.

Method for optimizing electrode pattern of quartz crystal resonator and quartz crystal resonator thereof

PendingCN122414100AQuartz crystal resonatorWafering
The application discloses a quartz crystal resonator electrode pattern optimization method and a quartz crystal resonator, and relates to the technical field of quartz crystal resonators.The application realizes accurate quantification and targeted positioning of parasitic modal vibration displacement distribution through modal simulation analysis, provides accurate geometric design basis for subsequent electrode pattern optimization, realizes accurate suppression of parasitic in-plane shear modal and efficient localization of main modal energy through collaborative design of central main electrode cosine gradient distribution and asymmetric annular suppression electrode, and the metal conductive film thickness of the central main electrode is continuously distributed in a cosine gradient along a radial direction, which strongly constrains the vibration energy of the thickness shear main modal to the wafer center area, and the asymmetric annular suppression electrode is differentially arranged according to the extracted first azimuthal area and second azimuthal area, generates elastic restoring force opposite to the parasitic in-plane shear modal vibration displacement through asymmetric mass load, and offsets the parasitic vibration displacement.
Owner:GUOXIN JINGYUAN (YUEYANG) ELECTRONICS CO LTD

Elastic wave device

PendingCN122268310AImpedence networksMiniaturizationPiezoelectric membrane
An elastic wave device capable of improving a Q value and hardly deteriorating resonance characteristics even when miniaturization is promoted. An elastic wave device (1) of the present invention includes a piezoelectric film (2) including lithium niobate or lithium tantalate, first and second bus bar electrodes (6, 7) disposed on the piezoelectric film (2) and opposed to each other, and first and second electrode fingers (8, 9) connected at one end to the first and second bus bar electrodes (6, 7). A bulk wave using a thickness shear primary mode is used. A first gap (G1) is disposed between the first bus bar electrode (6) and the second electrode finger (9). A second gap (G2) is disposed between the second bus bar electrode (7) and the first electrode finger (8). In a case where a center-to-center distance of adjacent first and second electrode fingers (8, 9) is p, a length of at least one of the first and second gaps (G1, G2) in a direction in which the first and second electrode fingers (8, 9) extend is 0.92p or more.
Owner:MURATA MFG CO LTD