22 results about "Thickness shear" patented technology

[PROBLEM TO BE SOLVED] To provide a bulk wave resonator having a high frequency passband.[SOLUTION] A bulk wave resonator using a bulk wave, includes a support substrate, an acoustic multilayer film that includes, stacked on the support substrate, a plurality of types of dielectrics having different acoustic impedances, a piezoelectric layer that is stacked on the acoustic multilayer film, a first electrode, and a second electrode. The first and second electrodes are disposed to face each other with a gap therebetween on a first surface of the piezoelectric layer opposite to the acoustic multilayer film, and are applied with a voltage for allowing the piezoelectric layer to generate the bulk wave. A direction that is parallel to the surface of the piezoelectric layer and in which the first electrode and the second electrode face each other is defined as a first direction. The bulk wave resonator uses, as a main mode, a bulk wave in the first direction that is generated by a thickness shear vibration in the first direction, which is excited by a parallel electric field formed in the piezoelectric layer when a voltage applied to the first electrode and the second electrode.

A crystal resonator includes a crystal plate and an electrode set. The crystal plate includes a first vibration section and a second vibration section arranged along an oscillating direction, and exhibits a thickness shear mode. The electrode set includes a first electrode pair disposed on the first vibration section, and a second electrode pair disposed on the second vibration section. The first electrode pair and the second electrode pair are configured to apply the applied voltages with opposite electrical polarities to the first vibration section and the second vibration section, respectively, which causes the first vibration section and the second vibration section to dynamically deform in the thickness shear mode along the oscillating direction, and do out of phase motion with respect to each other.

A crystal resonator includes a crystal plate and an electrode set. The crystal plate includes a first vibration section and a second vibration section arranged along an oscillating direction, and exhibits a thickness shear mode. The electrode set includes a first electrode pair disposed on the first vibration section, and a second electrode pair disposed on the second vibration section. The first electrode pair and the second electrode pair are configured to apply the applied voltages with opposite electrical polarities to the first vibration section and the second vibration section, respectively, which causes the first vibration section and the second vibration section to dynamically deform in the thickness shear mode along the oscillating direction, and do out of phase motion with respect to each other.

The present application relates to a kind of quartz crystal with thickness gradient based on the method for preparing chemical etching processing, comprising the following steps: (1) selecting piezoelectric crystal substrate, processing into the wafer of preset shape;(2) using chemical etching process to process wafer, make the uniform material property gradient layer in the thickness direction of wafer;(3) establish gradient change mathematical model, select cosine function or parabola as gradient change fitting model;(4) based on the above model, calculate the thickness shear vibration fundamental frequency of wafer, compare with measured vibration frequency, and determine gradient parameter and etching depth by inversion, prepare to obtain the quartz crystal with thickness gradient.The gradient structure formed by chemical etching significantly improves the thickness shear mode fundamental frequency, so that small size resonator can realize higher working frequency, and adapt to miniaturization communication and sensor device.

The invention provides a high-fundamental-frequency quartz crystal oscillator wafer and a preparation method thereof, and belongs to the technical field of piezoelectric crystal devices, the high-fundamental-frequency quartz crystal oscillator wafer comprises a wafer body, the wafer body comprises a first area and a second area, and the vertical thickness of the first area is smaller than that of the second area; the first area comprises a resonance area in a thickness shear vibration mode, the first area and the second area are connected into an integrated structure, and the first area is located on one side of the wide edge of the second area; the two electrode structures are located on the two sides of the wafer body in the thickness direction of the wafer body respectively, each electrode structure comprises an excitation electrode and an extraction electrode, the excitation electrodes are located in the resonance area, and the extraction electrodes are used for electrically connecting the excitation electrodes and the base dispensing area on the same side. The problems of fragile structure and high fracture risk existing in a high-fundamental-frequency plain film scheme are solved, and the high-fundamental-frequency high-strength miniaturized quartz crystal oscillator wafer is realized.

The present invention provides a piezoelectric transducer and method for directionally exciting and receiving non-dispersive torsional guided waves, which relates to the technical field of ultrasonic non-destructive testing. It includes a first circumferential array composed of a plurality of first piezoelectric units and a plurality of first time-delay units; and a second circumferential array composed of a plurality of second piezoelectric units and a plurality of second time-delay units. The present invention constructs a piezoelectric transducer capable of directionally exciting and receiving non-dispersive torsional guided waves through thickness-shear type piezoelectric units and time-delay units with height differences. Whether it is unidirectional excitation or unidirectional reception, there is no need for an external circuit or device to provide time delay, reducing the complexity and cost of the overall structure. Moreover, in this application, time-delay units are used instead of piezoelectric units to be combined with the pipeline in a curved surface, which can avoid the problem that the piezoelectric units are not well-matched with the detection pipeline due to too small flexibility, thereby improving the fitting degree, ensuring signal transmission, and making the detection more efficient and accurate.

The utility model relates to a film bulk acoustic resonator and electronic equipment, and the film bulk acoustic resonator comprises a substrate which is internally provided with a cavity; the lower electrode is formed on the substrate and covers the cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; the film bulk acoustic resonator has a thickness stretching mode and a thickness shearing mode, the thickness shearing mode is a main mode, and the cut-off frequency of the thickness shearing mode is lower than that of the thickness stretching mode.

The present application relates to plate parts multi-order adjustable shearing precision plastic forming technical field, specifically a kind of multi-order adjustable shearing forming equipment and method of plate parts with blade edge.It is based on rolling forming principle, motion execution mechanism carries out reciprocating linear motion under the drive of hydraulic cylinder, shearing forming mechanism is installed a group of different specifications of roller, roller specification increases along the processing direction in turn and roller is all driven wheel;Upper die plate is installed with pressing mechanism, ensure that plate does not move in the processing process;Lower die plate is installed with plate positioning mechanism, ensure the consistency of forming;To adapt to different plate thickness shearing deformation, lower die plate design continuous fine adjustment mechanism, realize the distance adjustment of upper die plate and lower die plate.The present application is a kind of local progressive shearing forming method, forming piece shearing deformation amount is continuously adjustable, forming force is small, roller is conveniently combined and used, can realize that the deformation organization is uniform and small, and the plate parts with blade edge with excellent performance processing.

A large-breadth closed area internal gap and infinitesimal displacement high-precision measurement method based on a flexible pressure sensor comprises the steps that (1) a sensor array is attached between a base layer structure and a skin, and local array signals of an attachment interface between the base layer structure and the skin are collected; 2) constructing a structural mechanical model of the composite material; 3) inputting the collected local array signal into the composite material structural mechanical model to obtain a gap height of a fitting interface; and 4) processing the gap height of the fitting interface by using a spatial interpolation and fitting algorithm to generate a continuous fitting gap map. The method is high in flexibility and adaptability, and the accuracy and the anti-interference capability of fitting state recognition are improved through multi-physical-quantity cooperative sensing. The method can effectively correct the deviation caused by the thickness shearing error and the curvature. According to the method, the gap reconstruction capability is high, and quantitative evaluation and visual expression of the fitting quality are realized. The method supports a dynamic fitting process and supports software and hardware system integration.

To provide a quartz vibrating piece having a novel structure capable of suppressing unwanted vibrations more effectively than conventional structures.SOLUTION: A crystal vibrating piece 10 is a rectangular AT-cut crystal vibrating piece in plan view. At least two of the four sides of the crystal vibrating piece, intersecting with the displacement direction of the thickness-shear vibration, each have a portion or the entire side formed as a continuous convex-concave surface 10a along the side containing the side surface. Moreover, the protrusions and depressions are randomly arranged, and a height difference h of at least some of the protrusions and depressions is λ / 3 or greater relative to the wavelength λ of bending vibrations that may occur in the piezoelectric vibrating piece.SELECTED DRAWING: Figure 1

A large-format closed area internal gap and small displacement high-precision measurement method based on a flexible pressure sensor, comprising: 1) attaching a sensor array between the base layer structure and the skin, collecting the local array signal of the fitting interface between the base layer structure and the skin; 2) constructing a composite material structure mechanics model; 3) inputting the collected local array signal into the composite material structure mechanics model to obtain the gap height of the fitting interface; 4) processing the gap height of the fitting interface by using a spatial interpolation and fitting algorithm to generate a continuous fitting gap atlas. The application has strong flexibility, and the multi-physical quantity collaborative sensing improves the accuracy and anti-interference ability of the fitting state recognition. The application can effectively correct the deviation caused by the thickness shear error and the curvature. The application has strong gap reconstruction capability, realizes quantitative evaluation and visual expression of the fitting quality. The application supports dynamic fitting process and supports software and hardware system integration.

The present invention provides a device for measuring the concentration of magnetic particles in a solution, comprising a quartz crystal oscillator, an oscillation circuit, a frequency detection circuit, and a controllable magnetic field generator; the quartz crystal oscillator operates in a thickness shear vibration mode; a coating position for a solution to be measured is provided on the quartz crystal oscillator; a resonant frequency value of the quartz crystal oscillator is defined as a first resonant frequency value when the magnetic field does not act on the quartz crystal oscillator; a resonant frequency value of the quartz crystal oscillator is defined as a second resonant frequency value when the magnetic field acts on the quartz crystal oscillator; the principle of the device for measuring the concentration of magnetic particles in a solution is to measure the concentration of magnetic particles by comparing the first resonant frequency value with the second resonant frequency value. The present invention utilizes an external magnetic field to change the distribution of magnetic particles in a solution and utilizes the sensitivity of the thickness shear quartz crystal oscillator to the density distribution of the solution to measure the concentration of magnetic beads in the solution to be measured, and has the characteristics of simplicity, speed, and wide applicability.

Provided is an elastic wave device capable of improving a Q value and hardly deteriorating resonance characteristics even when miniaturization is promoted. An elastic wave device (1) of the present invention includes a piezoelectric film (2) including lithium niobate or lithium tantalate, first and second bus bar electrodes (6, 7) disposed on the piezoelectric film (2) and opposing each other, and first and second electrode fingers (8, 9) having one end connected to the first and second bus bar electrodes (6, 7). A bulk wave using a thickness shear primary mode is used. A first gap (G1) is disposed between the first bus bar electrode (6) and the second electrode finger (9). A second gap (G2) is disposed between the second bus bar electrode (7) and the first electrode finger (8). In a case where a center-to-center distance of adjacent first and second electrode fingers (8, 9) is p, lengths of the first and second gaps (G1, G2) in a direction in which the first and second electrode fingers (8, 9) extend are 0.92p or more.

The present invention discloses a piezoelectric transducer and method for unidirectional excitation and reception of non-dispersive ultrasonic guided waves. The piezoelectric transducer of the present invention adopts a method of unidirectional excitation and reception of non-dispersive ultrasonic guided waves, wherein two polarization directions are opposite and the thickness shear piezoelectric coefficient d is set to 0. 15 The piezoelectric transducer plates are respectively arranged on the surfaces of the short-side and high-side delay pillars, inducing the SH0 wave or T (0, 1) wave generated by the measured waveguide to propagate in both directions. The distance and height difference between the short-side and high-side delay pillars meet the interference conditions, so the interference is canceled in the direction of the high-side delay pillar, and the non-dispersive ultrasonic guided waves propagating in the direction of the short-side delay pillar are enhanced by interference. Therefore, the piezoelectric transducer can excite the non-dispersive ultrasonic guided waves propagating in one direction within a wide frequency range, and as a sensor, it filters out the non-dispersive ultrasonic guided waves on the weakened side and only receives the non-dispersive ultrasonic guided waves on the enhanced side. Regardless of unidirectional excitation or unidirectional reception, the present invention does not require an external circuit or device to provide time delay.

The utility model discloses a vertical type low-frequency resonance mode quartz thermosensitive resonator with a shock-proof reinforced structure, which relates to the technical field of resonance type quartz temperature sensors and comprises a zinc cupronickel pipe cap, a Kovar alloy pipe seat is arranged on the lower wall surface of the zinc cupronickel pipe cap, and the Kovar alloy pipe seat is arranged on the lower wall surface of the zinc cupronickel pipe cap. The Kovar alloy tube socket comprises a first glass powder insulator, a second glass powder insulator, a first tube pin, a second tube pin and a Kovar alloy base plate, and the first tube pin and the second tube pin are arranged on the Kovar alloy base plate and penetrate through the Kovar alloy base plate. The performance of the vertical low-frequency resonant mode quartz thermosensitive resonator is effectively improved, so that the resonator not only has the advantages of a bending resonant mode and a thickness shear mode, but also abandons some defects of the bending resonant mode and the thickness shear mode, and is high in resolution, good in linearity, wide in working temperature range, high in accuracy, excellent in long-term stability, high in mechanical vibration resistance and impact resistance, simple in structure, stable and reliable, and suitable for popularization and application. In addition, the requirement for process errors is not harsh, the production cost is low, and the consistency is good.

The application discloses a kind of without bottom electrode transverse excitation thickness shear type high overtone bulk acoustic wave resonator, including low acoustic loss substrate, piezoelectric film layer being arranged on substrate and the transverse electrode structure being arranged on the top of piezoelectric film layer. Among them, piezoelectric film layer and substrate do not set any metal electrode layer between them, and form continuous acoustic impedance matching interface.Working, through transverse electrode in piezoelectric layer generates plane direction electric field, excite thickness shear vibration mode, make acoustic wave propagate along thickness direction and form multiple reflection high overtone standing wave resonance in substrate.Compared with traditional structure, the application completely eliminates the acoustic impedance mismatch problem introduced by bottom electrode, significantly improves acoustic energy transmission efficiency and quality factor, obtains stable frequency spectrum comb response, simultaneously realizes the flexible regulation of modal volume by electrode design.The structure process is simple, compatible with standard semiconductor process, suitable for radio frequency filter, multiplexer and microwave acoustic system.

A crystal resonator comprises a crystal wafer and an electrode group. The crystal plate is in a sheet shape and is integrally formed, and can generate thickness shear oscillation in a movement direction which is not parallel to the thickness direction by being applied with voltage. The crystal wafer comprises a first vibration part and a second vibration part which are arranged in the movement direction and connected with each other. The electrode group comprises a first pair of electrodes arranged on the first vibration part and a second pair of electrodes arranged on the second vibration part. And the first pair of electrodes and the second pair of electrodes respectively apply voltages with opposite polarities to the first vibration part and the second vibration part, so that the thickness shear oscillations generated by the first vibration part and the second vibration part oppositely vibrate or reversely vibrate in the movement direction. Therefore, inertia forces introduced by external interference on the first vibration part and the second vibration part can be mutually counteracted, and the acceleration vibration effect generated by the inertia forces on the crystal plate is further eliminated, so that the effect of reducing the acceleration sensitivity is achieved.

The application discloses a quartz crystal resonator electrode pattern optimization method and a quartz crystal resonator, and relates to the technical field of quartz crystal resonators.The application realizes accurate quantification and targeted positioning of parasitic modal vibration displacement distribution through modal simulation analysis, provides accurate geometric design basis for subsequent electrode pattern optimization, realizes accurate suppression of parasitic in-plane shear modal and efficient localization of main modal energy through collaborative design of central main electrode cosine gradient distribution and asymmetric annular suppression electrode, and the metal conductive film thickness of the central main electrode is continuously distributed in a cosine gradient along a radial direction, which strongly constrains the vibration energy of the thickness shear main modal to the wafer center area, and the asymmetric annular suppression electrode is differentially arranged according to the extracted first azimuthal area and second azimuthal area, generates elastic restoring force opposite to the parasitic in-plane shear modal vibration displacement through asymmetric mass load, and offsets the parasitic vibration displacement.

An elastic wave device capable of improving a Q value and hardly deteriorating resonance characteristics even when miniaturization is promoted. An elastic wave device (1) of the present invention includes a piezoelectric film (2) including lithium niobate or lithium tantalate, first and second bus bar electrodes (6, 7) disposed on the piezoelectric film (2) and opposed to each other, and first and second electrode fingers (8, 9) connected at one end to the first and second bus bar electrodes (6, 7). A bulk wave using a thickness shear primary mode is used. A first gap (G1) is disposed between the first bus bar electrode (6) and the second electrode finger (9). A second gap (G2) is disposed between the second bus bar electrode (7) and the first electrode finger (8). In a case where a center-to-center distance of adjacent first and second electrode fingers (8, 9) is p, a length of at least one of the first and second gaps (G1, G2) in a direction in which the first and second electrode fingers (8, 9) extend is 0.92p or more.

To secure an area of a vibration part to the maximum in a piezoelectric vibration piece having a structure in which a fixed part is thicker than the vibration part.SOLUTION: A piezoelectric vibrating reed according to an aspect of the present invention is a piezoelectric vibrating reed that vibrates in a thickness shear mode and has a substantially rectangular shape in a plan view, the piezoelectric vibrating reed including a vibrating portion, an inclined portion, and a fixing portion that are integrally formed and are disposed in this order along a first direction, in which a pair of adhering and fixing portions to which an adhesive for adhering and fixing the piezoelectric vibrating reed to a container is applied are formed in regions in the vicinity of both end portions in a second direction intersecting the first direction in a plan view on a rear surface of the fixing portion. The fixed portion is thicker than the vibrating portion in a third direction intersecting both the first direction and the second direction, the inclined portion becomes thicker in the third direction from the vibrating portion side toward the fixed portion side, and a boundary line between the vibrating portion and the inclined portion is convex toward the fixed portion side in a plan view.SELECTED DRAWING: Figure 1

The present invention is able to reduce a CI value without requiring precise processing of a crystal blank.An electrode structure of a crystal unit (1) according to the present invention includes driven electrodes (21, 22) arranged at least at a center on main surfaces (11, 12) of a crystal blank (10). The driven electrodes (21, 22) have a structure in which vibration energy of thickness shear vibration of the crystal blank (10) is concentrated in a central region of the crystal blank (10).

Provided is an elastic wave device having a relatively wide bandwidth and a high impedance ratio even in a frequency band of 3.5 GHz or more. The present invention is provided with: a piezoelectric thin plate (11) comprising either LiNbO3 or LiTaO3; a plurality of electrode bodies (12) arranged on one surface of the piezoelectric thin plate (11) at intervals; and a floating electrode (13) provided on the other surface of the piezoelectric thin plate (11). In the piezoelectric thin plate (11), the Euler angle ([theta], [psi]) when the arrangement direction of each electrode body is [psi] is any one of (90 DEG + / -10 DEG, 90 DEG + / -10 DEG, 6 DEG-56 DEG) and (30 DEG + / -10 DEG, 90 DEG + / -10 DEG, 124 DEG-174 DEG), or the Euler angle is crystallographically equivalent to any one of the above. The vibration exciter is configured to excite a basic mode or a high-order mode of thickness shear vibration.