6 results about "Thickness shear" patented technology

A large-format closed area internal gap and small displacement high-precision measurement method based on a flexible pressure sensor, comprising: 1) attaching a sensor array between the base layer structure and the skin, collecting the local array signal of the fitting interface between the base layer structure and the skin; 2) constructing a composite material structure mechanics model; 3) inputting the collected local array signal into the composite material structure mechanics model to obtain the gap height of the fitting interface; 4) processing the gap height of the fitting interface by using a spatial interpolation and fitting algorithm to generate a continuous fitting gap atlas. The application has strong flexibility, and the multi-physical quantity collaborative sensing improves the accuracy and anti-interference ability of the fitting state recognition. The application can effectively correct the deviation caused by the thickness shear error and the curvature. The application has strong gap reconstruction capability, realizes quantitative evaluation and visual expression of the fitting quality. The application supports dynamic fitting process and supports software and hardware system integration.

Provided is an elastic wave device capable of improving a Q value and hardly deteriorating resonance characteristics even when miniaturization is promoted. An elastic wave device (1) of the present invention includes a piezoelectric film (2) including lithium niobate or lithium tantalate, first and second bus bar electrodes (6, 7) disposed on the piezoelectric film (2) and opposing each other, and first and second electrode fingers (8, 9) having one end connected to the first and second bus bar electrodes (6, 7). A bulk wave using a thickness shear primary mode is used. A first gap (G1) is disposed between the first bus bar electrode (6) and the second electrode finger (9). A second gap (G2) is disposed between the second bus bar electrode (7) and the first electrode finger (8). In a case where a center-to-center distance of adjacent first and second electrode fingers (8, 9) is p, lengths of the first and second gaps (G1, G2) in a direction in which the first and second electrode fingers (8, 9) extend are 0.92p or more.

The application discloses a kind of without bottom electrode transverse excitation thickness shear type high overtone bulk acoustic wave resonator, including low acoustic loss substrate, piezoelectric film layer being arranged on substrate and the transverse electrode structure being arranged on the top of piezoelectric film layer. Among them, piezoelectric film layer and substrate do not set any metal electrode layer between them, and form continuous acoustic impedance matching interface.Working, through transverse electrode in piezoelectric layer generates plane direction electric field, excite thickness shear vibration mode, make acoustic wave propagate along thickness direction and form multiple reflection high overtone standing wave resonance in substrate.Compared with traditional structure, the application completely eliminates the acoustic impedance mismatch problem introduced by bottom electrode, significantly improves acoustic energy transmission efficiency and quality factor, obtains stable frequency spectrum comb response, simultaneously realizes the flexible regulation of modal volume by electrode design.The structure process is simple, compatible with standard semiconductor process, suitable for radio frequency filter, multiplexer and microwave acoustic system.

The application discloses a quartz crystal resonator electrode pattern optimization method and a quartz crystal resonator, and relates to the technical field of quartz crystal resonators.The application realizes accurate quantification and targeted positioning of parasitic modal vibration displacement distribution through modal simulation analysis, provides accurate geometric design basis for subsequent electrode pattern optimization, realizes accurate suppression of parasitic in-plane shear modal and efficient localization of main modal energy through collaborative design of central main electrode cosine gradient distribution and asymmetric annular suppression electrode, and the metal conductive film thickness of the central main electrode is continuously distributed in a cosine gradient along a radial direction, which strongly constrains the vibration energy of the thickness shear main modal to the wafer center area, and the asymmetric annular suppression electrode is differentially arranged according to the extracted first azimuthal area and second azimuthal area, generates elastic restoring force opposite to the parasitic in-plane shear modal vibration displacement through asymmetric mass load, and offsets the parasitic vibration displacement.

An elastic wave device capable of improving a Q value and hardly deteriorating resonance characteristics even when miniaturization is promoted. An elastic wave device (1) of the present invention includes a piezoelectric film (2) including lithium niobate or lithium tantalate, first and second bus bar electrodes (6, 7) disposed on the piezoelectric film (2) and opposed to each other, and first and second electrode fingers (8, 9) connected at one end to the first and second bus bar electrodes (6, 7). A bulk wave using a thickness shear primary mode is used. A first gap (G1) is disposed between the first bus bar electrode (6) and the second electrode finger (9). A second gap (G2) is disposed between the second bus bar electrode (7) and the first electrode finger (8). In a case where a center-to-center distance of adjacent first and second electrode fingers (8, 9) is p, a length of at least one of the first and second gaps (G1, G2) in a direction in which the first and second electrode fingers (8, 9) extend is 0.92p or more.

Provided is an elastic wave device having a relatively wide bandwidth and a high impedance ratio even in a frequency band of 3.5 GHz or more. The present invention is provided with: a piezoelectric thin plate (11) comprising either LiNbO3 or LiTaO3; a plurality of electrode bodies (12) arranged on one surface of the piezoelectric thin plate (11) at intervals; and a floating electrode (13) provided on the other surface of the piezoelectric thin plate (11). In the piezoelectric thin plate (11), the Euler angle ([theta], [psi]) when the arrangement direction of each electrode body is [psi] is any one of (90 DEG + / -10 DEG, 90 DEG + / -10 DEG, 6 DEG-56 DEG) and (30 DEG + / -10 DEG, 90 DEG + / -10 DEG, 124 DEG-174 DEG), or the Euler angle is crystallographically equivalent to any one of the above. The vibration exciter is configured to excite a basic mode or a high-order mode of thickness shear vibration.