This invention relates to the field of sensor
manufacturing technology, specifically to a high-temperature in-situ self-
adhesive sensor and its manufacturing method. The method involves obtaining a self-supporting
polycrystalline diamond substrate, performing double-sided
polishing and surface activation treatment; depositing a piezoelectric layer on the first surface of the substrate, and fabricating electrodes and an antenna; pre-depositing a
titanium getter film on the second surface of the substrate, then using a
shadow mask to shield it, and constructing a support frame in situ through
electroplating a
nickel layer or evaporating a
molybdenum layer to form a pressure-sensitive cavity; using selective
atomic layer deposition (SLD) technology to encapsulate and protect the sensor surface except for the bottom surface to be welded on the support frame; subsequently depositing a Ni-B self-fusing
active layer on the exposed bottom of the support frame, attaching it to the
device under test, and heating to induce a transient liquid-
phase diffusion reaction to achieve atomic-level glue-free fusion integration. During this process, residual gas in the cavity reacts chemically with the pre-placed
titanium film at high temperature and is absorbed, thereby forming an absolute pressure cavity.