Planar spiral inductor

A planar spiral and inductance technology, which is applied in the direction of inductors, fixed inductors, fixed signal inductance, etc., can solve the problems such as the decrease of inductance quality factor, reduce the effective dielectric constant, reduce the relative dielectric constant, and reduce the substrate The effect of loss

Active Publication Date: 2011-10-05
EAST CHINA NORMAL UNIV +1
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a planar spiral inductor to solve the problem that

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Planar spiral inductor
  • Planar spiral inductor
  • Planar spiral inductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Please refer to Figure 1A and Figure 1B ,in, Figure 1A It is a top view of the planar spiral inductor provided by Embodiment 1 of the present invention, Figure 1B It is a cross-sectional view of the planar spiral inductor provided by Embodiment 1 of the present invention.

[0032] Such as Figure 1A and Figure 1B As shown, the planar spiral inductor 100 includes: a semiconductor substrate 110, a dielectric layer 120, a planar spiral inductor body 130 and an insulating isolation structure 140, the dielectric layer 120 is formed on the semiconductor substrate 110, and the planar spiral inductor body 130 is formed on the dielectric layer 120 , and the insulating isolation structure 140 is formed in the semiconductor substrate 110 and corresponds to the planar spiral inductor body 130 . Wherein, the planar spiral inductor body 130 includes: multi-turn coils 131 and interval regions 132 between the multi-turn coils 131 , and the multi-turn coils 131 are formed by wind...

Embodiment 2

[0045] Please refer to Figure 2A and Figure 2B ,in, Figure 2A It is a top view of the planar spiral inductor provided by Embodiment 2 of the present invention, Figure 2B It is a cross-sectional view of the planar spiral inductor provided by Embodiment 2 of the present invention.

[0046] Such as Figure 2A and Figure 2B As shown, the planar spiral inductor 200 includes: a semiconductor substrate 210, a dielectric layer 220, a planar spiral inductor body 230 and an insulating isolation structure 240, the dielectric layer 220 is formed on the semiconductor substrate 210, and the planar spiral inductor body 230 is formed On the dielectric layer 220 , the isolation structure 240 is formed in the semiconductor substrate 210 and corresponds to the planar spiral inductor body 230 . Wherein, the planar spiral inductor body 230 includes: multi-turn coils 231 and interval regions 232 between the multi-turn coils 231 . The difference between this embodiment and the first embod...

Embodiment 3

[0048] Please refer to image 3 , which is a top view of the planar spiral inductor provided by Embodiment 3 of the present invention. Such as image 3 As shown, the difference between this embodiment and other embodiments is that the insulating isolation structure 340 of the planar spiral inductor 300 is formed in the semiconductor substrate, and the insulating isolation structure 340 is located in the innermost coil area of ​​the multi-turn coil 331 It should be noted that the area inside the innermost coil includes the innermost coil itself, that is, the area of ​​the semiconductor substrate surface below the center of the planar spiral inductor body 330 is completely replaced by insulating materials.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a planar spiral inductor. The planar spiral inductor comprises a semiconductor substrate, a dielectric layer formed on the semiconductor substrate, a planar spiral inductor main body formed on the dielectric layer, and an insulating isolation structure which is formed in the semiconductor substrate and corresponds to the planar spiral inductor main body. The planar spiral inductor is provided with the insulating isolation structure which can reduce substrate loss of the planar spiral inductor; moreover, the process of the insulating isolation structure is compatible with a front-end process of a complementary metal oxide semiconductor (CMOS), preparation cost is not increased, and a quality factor of the planar spiral inductor is improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a planar spiral inductor with an insulating isolation structure. Background technique [0002] In the development of CMOS radio frequency integrated circuits (RFICs), the most urgent and difficult thing is to develop new high-performance devices and new unit circuits, which are the basis for realizing monolithic CMOS integrated RF front-ends. As a key component in radio frequency integrated circuits, planar spiral inductors are the most difficult components to design and master in circuits, and their performance parameters directly affect the performance of radio frequency integrated circuits. The on-chip inductor can realize the integration of the inductor in the radio frequency integrated circuit, thus contributing to the realization of the system on chip of the radio frequency integrated circuit. [0003] Most of the on-chip planar spiral inductors are wound on...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/00H01F37/00
Inventor 石艳玲李曦张建军赵宇航王勇
Owner EAST CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap