Semiconductor device

Abstract

The invention discloses a semiconductor device. The semiconductor device comprises a channel region, a drift region, a gate structure formed by overlapping a gate dielectric layer and a polysilicon gate, a source region and a drain region, wherein the drain region and a second side of the gate structure are separated by a distance; a drain terminal combination structure formed by more than one first doped region opposite to drain region doping and more than one first shallow trench field oxide is formed between the drain region and a second side of the gate structure; the top of the drain region is connected to a drain electrode formed by a front metal layer through a contact hole, and the first doped region is floated; when the semiconductor device works, through the drain terminal combination structure, the depletion of the drift region is increased and the electric field intensity of the drift region is reduced, and the reliability of the device is improved. According to the device,the reliability of the device can be improved, the characteristics of the native device cannot be influenced, the process cost is not increased, and a selection is provided for high-voltage application.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to a semiconductor device. Background technique [0002] In a semiconductor integrated circuit, various devices need to be integrated on the same semiconductor substrate such as a silicon substrate at the same time. A semiconductor integrated circuit usually includes a core circuit (Core) and an input and output (IO) circuit. Each device of the core circuit corresponds to As for the core device, each device of the IO circuit corresponds to the IO device. For the memory, the core circuit corresponds to a storage array composed of storage units, and the stored information of the storage units needs to be operated through the IO circuit. [0003] In addition to core circuits and input and output circuits, it is often necessary to integrate high-voltage devices or high-voltage components with operating voltages and breakdown voltages that are much higher than core devices and IO dev...

AI Technical Summary

Problems solved by technology

When high-voltage components are operated at high voltages such as 3.3, 5V or 8V, especially when they reach the saturation range, the electric field strength will deeply affect the reliability of high-voltage components, such as breakdown of the gate oxide layer, hot carrier injection and other problems are prone to occur

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