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Method for preparing gallium-doped nano silicon particles by utilizing silicon waste

A technology of silicon waste and nano-silicon, which is applied in the field of semiconductor nano-material preparation, can solve problems such as light attenuation, and achieve the effects of simple preparation method, reduced environmental pollution, and good conductivity

Active Publication Date: 2021-10-01
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existence of boron-oxygen complexes in the process of boron diffusion, it is easy to cause light attenuation

Method used

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  • Method for preparing gallium-doped nano silicon particles by utilizing silicon waste
  • Method for preparing gallium-doped nano silicon particles by utilizing silicon waste

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Experimental program
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Effect test

Embodiment 1

[0028] This embodiment provides a method for preparing gallium-doped nano-silicon particles by using silicon waste materials. Silicon waste materials obtained by cutting gallium-doped silicon ingots with diamond wires are used as raw materials to prepare gallium-doped nano-silicon particles. Specific steps are as follows:

[0029] Step 1: Select silicon waste obtained by diamond wire cutting gallium-doped silicon ingots with a resistivity of 0.5-1Ω·cm as the raw material, and purify it to obtain silicon purity ≥ 95%, and the size range of silicon micropowder is 5-10 μm Silicon micropowder; in addition to using silicon waste as raw material, using pure silicon powder obtained by metallurgy and primary ball milling method as raw material will not affect the result of the final gallium-doped nano-silicon particles, but considering the economy, diamond is preferred Silicon waste after wire cutting silicon ingots is used as raw material;

[0030] The second step: preparing gallium...

Embodiment 2

[0045] This embodiment provides a method for preparing gallium-doped nano-silicon particles by using silicon waste materials. Silicon waste materials obtained by cutting gallium-doped silicon ingots with diamond wires are used as raw materials to prepare gallium-doped nano-silicon particles. Specific steps are as follows:

[0046] Step 1: Select silicon waste obtained by diamond wire cutting gallium-doped silicon ingots with a resistivity of 0.5-1Ω·cm as the raw material, and purify it to obtain silicon purity ≥ 95%, and the size range of silicon micropowder is 0.5-3 μm Silicon micropowder; in addition to using silicon waste as raw material, using pure silicon powder obtained by metallurgy and primary ball milling method as raw material will not affect the result of the final gallium-doped nano-silicon particles, but considering the economy, diamond is preferred Silicon waste after wire cutting silicon ingots is used as raw material;

[0047] The second step: prepare gallium ...

Embodiment 3

[0062] This embodiment provides a method for preparing gallium-doped nano-silicon particles by using silicon waste materials. Silicon waste materials obtained by cutting gallium-doped silicon ingots with diamond wires are used as raw materials to prepare gallium-doped nano-silicon particles. Specific steps are as follows:

[0063] The first step: choose the silicon waste obtained after diamond wire cutting gallium-doped silicon ingots with a resistivity of 0.5-1Ω·cm as the raw material, purify it to obtain silicon purity ≥ 95%, and the size range of silicon micropowder is 1-5 μm Silicon micropowder; in addition to using silicon waste as raw material, using pure silicon powder obtained by metallurgy and primary ball milling method as raw material will not affect the result of the final gallium-doped nano-silicon particles, but considering the economy, diamond is preferred Silicon waste after wire cutting silicon ingots is used as raw material;

[0064] The second step: prepare...

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Abstract

The invention discloses a method for preparing gallium-doped nano silicon particles by using silicon waste. The method comprises the following steps: selecting silicon micro-powder obtained by purifying the silicon waste after cutting a silicon ingot by a diamond wire as a raw material, preparing a gallium doping agent, mixing the doping agent with the silicon micro-powder, and carrying out ball milling; and pre-diffusing a gallium element to the surfaces of silicon particles through an instantaneous high temperature in a ball milling process, then carrying out vacuum drying on a product after ball milling, placing the dried product in a vacuum furnace, introducing a mixed gas of hydrogen and nitrogen for auxiliary diffusion, and screening and collecting after diffusion is completed to finally obtain the gallium-doped silicon nanoparticles. The gallium-doped silicon nanoparticles are simple in preparation process, low in production cost, suitable for a laser to carry out rapid and efficient local gallium element doping, high in process compatibility with an existing solar battery production line and suitable for industrial production. As the gallium-doped silicon nanoparticles have good conductivity, the gallium-doped silicon nanoparticles can well relieve the volume expansion of silicon and improve the rate capability of the battery as the silicon negative electrode material of the lithium battery.

Description

technical field [0001] The invention relates to the technical field of preparation of semiconductor nanometer materials, in particular to a method for preparing gallium-doped nano-silicon particles by utilizing silicon waste. Background technique [0002] In 2019, my country's silicon wafer output was 134.6GW. In the first half of 2020, China's silicon wafer output was 75GW, a year-on-year increase of 19.0%. In 2020, the annual silicon wafer output exceeded 150GW. The production of silicon wafers is mainly prepared by diamond wire multi-wire cutting of silicon ingots. During the process of cutting silicon ingots, 40-50% of high-purity silicon powder will be produced. It is estimated that the silicon waste produced for every 10GW of silicon wafers produced will be as high as 16,250 tons. Such a large amount of silicon waste greatly increases the production cost of silicon wafers, and at the same time, the disposal of the waste requires a relatively high cost. The silicon pow...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/38H01L31/18H01M10/0525
CPCH01M4/386H01M10/0525H01L31/1804H01M2004/027Y02P70/50Y02E60/10Y02E10/547
Inventor 洪捐
Owner YANCHENG INST OF TECH
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