Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing process of solar P-type polycrystalline silicon wafer

A polycrystalline silicon wafer and manufacturing process technology, applied in the direction of manufacturing tools, polycrystalline material growth, fine working devices, etc., can solve problems such as light-induced attenuation, achieve fast heating speed, increase temperature, and save production costs.

Active Publication Date: 2021-02-12
ANYANG INST OF TECH
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the presence of B-O complexes in solar cells prepared by B-doped P-type silicon wafers, which leads to light-induced attenuation, the dopant of P-type silicon wafers is gradually replaced by Ga elements from traditional B elements.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing process of solar P-type polycrystalline silicon wafer
  • Manufacturing process of solar P-type polycrystalline silicon wafer
  • Manufacturing process of solar P-type polycrystalline silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] Preparation of P-type silicon ingot: In an argon atmosphere, the silicon material was sintered to 1550 °C in a microwave sintering furnace, and the microwave frequency was 2.45 GHz ± 25 MHz. The heating rate was 26 ℃ / min, and the heat preservation was 120 min. The whole process of temperature rise and fall was protected and cooled by argon gas, and the purity of argon gas was 4 N (99.99%). The role of argon is to prevent the silicon material from being oxidized during the heating process. The temperature of the microwave sintering furnace is controlled by an intelligent control system, and the temperature is measured by infrared rays. The microwave generated by the microwave sintering furnace is diffracted (diffraction) inside the silicon material, and the silicon material is heated at the same time, with a fast heating rate and less heat loss. Compared with a resistance furnace, the same temperature increase can save energy by more than 40%. At the same time, the sil...

Embodiment

[0040] Step 1: Prepare P-type recycled silicon material. The recycled silicon material contains metal impurities such as hair, staples, and diamond wires, and organic impurities such as sticky glue, sticky board glue, and resin board. After magnetic separation, hot water degumming, carbonization and other stages, and then after 20% HF corrosion, 25% HCl and 30% H 2 o 2 Mixed liquid pickling, water isolation, 12% NaOH alkali washing and other stages, followed by appropriate concentration of HCl to neutralize the residual liquid on the surface of the fragments, deionized water ultrasonic rinsing and other procedures, the final rinse water conductivity 936 μS / cm, Rinse water pH = 7.01. After drying in a microwave oven at 105 ℃, manual sorting and other procedures, the broken silicon wafers without impurities are packaged and put into storage. Manual sorting mainly screens non-silicon impurities such as stones that cannot be treated by pickling, alkali washing and other procedu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Conductivityaaaaaaaaaa
Resistivityaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a manufacturing process of a solar P-type polycrystalline silicon wafer. The manufacturing process comprises the following steps: (1) preparing raw materials; (2) preparing a P-type silicon ingot; (3) cutting and squaring the silicon ingot; and (4) cutting and cleaning the silicon wafer, wherein the used raw materials comprise a primary silicon material with the purity of 6N, a circulating silicon material and a doping agent gallium, the circulating silicon material comprises a circulating silicon plate, a circulating silicon block, a circulating silicon sheet and circulating silicon powder, the circulating silicon material needs to be subjected to impurity removal and purification treatment before being used, the edge of a crucible is filled with the circulating silicon material during ingot casting, the center of the crucible is filled with the primary silicon material doped with gallium, the doping concentration of gallium in the primary silicon material is gradually reduced from the bottom of the crucible to the top of the crucible, the concentration of gallium at the top is zero, the crucible filled with the silicon material is put into a microwave sintering furnace, and the material is discharged out of the furnace after heating, heat preservation and cooling under the protection of argon to obtain the P-type silicon ingot uniformly doped with gallium. According to the method, the circulating silicon material is fully utilized, and the prepared silicon wafer is stable in quality.

Description

technical field [0001] The invention specifically relates to a manufacturing process of a solar P-type polysilicon wafer, which belongs to the technical field of semiconductor materials. Background technique [0002] The photoelectric conversion efficiency of solar cells is closely related to the quality of solar silicon wafers, and the purity of silicon wafers is generally required to be no less than 6N (99.9999%). The manufacturing process of polysilicon wafers usually includes ingot casting, squaring, slicing, testing and packaging, etc. During this process, a large amount of recycled silicon materials will be produced, including ① the top skin, bottom skin and side skin cut off during the cutting process of the silicon ingot etc., generally in the shape of a thin plate (circular silicon plate, silicon block), the content of impurity elements in these parts is higher than that of primary silicon; ② Incomplete and damaged single crystal silicon wafers or polycrystalline si...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B28/04C30B29/06B28D5/00
CPCC30B28/04C30B29/06B28D5/00
Inventor 刘振东刘笑笑晁军峰
Owner ANYANG INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com