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Method for studying optimum sintering process of gallium-doped zinc oxide ceramic by spark plasma sintering

A technology of discharge plasma and zinc oxide, applied in the field of preparation of GaxZn1-xO conductive ceramics, can solve the problems of high energy consumption, high sintering temperature, long preparation cycle, etc., achieve low energy consumption, improve preparation efficiency, and shorten preparation cycle Effect

Inactive Publication Date: 2016-06-15
BEIJING UNIV OF TECH
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  • Claims
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Problems solved by technology

However, there are still some problems in the current research work: 1. M.S.Jang and others have the following problems in the preparation process of GZO ceramics: 1. The sintering temperature is relatively high (1300 ° C), and the sintering time is long (10 hours), so , the preparation period of this process is longer, and the energy consumption is larger, which is not conducive to industrial production
2. Although equipped with 6 different components and determined the optimal component (molar ratio is 0.5at%), the minimum resistivity of ceramics is relatively large, which is 1.0Ω·cm
Obviously, there are also problems such as long preparation cycle, low efficiency, and high energy consumption, which is not conducive to industrial production, and the obtained minimum resistivity is still very large.

Method used

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  • Method for studying optimum sintering process of gallium-doped zinc oxide ceramic by spark plasma sintering
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  • Method for studying optimum sintering process of gallium-doped zinc oxide ceramic by spark plasma sintering

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Embodiment Construction

[0021] (1) High-purity ZnO (99.99%) and Ga 2 o 3 (99.99%) powder according to Ga 0.00075 Zn 0.99925 After the O ratio is weighed, place the ZrO 2 In the nylon tank of the grinding medium, use absolute ethanol as the dispersant for ball milling for 24 hours, dry and sieve to obtain uniformly mixed ZnO, Ga 2 o 3 Powder;

[0022] (2) powder is packed in graphite grinding tool, compaction, graphite grinding tool is placed in the furnace chamber of discharge plasma sintering furnace, vacuumize, pre-pressure is 15MPa;

[0023] (3) Increase from room temperature to 600°C within 4 minutes, and then increase the temperature at a rate of 10°C / min. When the displacement curve in the computer screen of the SPS sintering furnace has the largest peak value (the shrinkage rate of the sample is the largest at this time) ( 720°C or so) to raise the pressure to 60MPa, and then increase the temperature to (950°C, 1000°C, 1050°C, 1100°C, 1150°C, 1200°C) at the same heating rate, keep the te...

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Abstract

The invention provides a method for studying the optimal sintering process of gallium-doped zinc oxide ceramics by spark plasma sintering. ZnO and Ga 2 o 3 Powder according to Ga 0.00075 Zn 0.99925 After the O ratio is weighed, ball milled, dried and sieved, ZnO, Ga 2 o 3 Powder; the powder is put into the graphite grinding tool, compacted, the graphite grinding tool is placed in the furnace cavity of the spark plasma sintering furnace, vacuumed, and the pre-pressure is 15MPa; it is raised from room temperature to 600 ° C within 4 minutes, and then Raise the temperature at a rate of 10°C / min. When the maximum peak value appears on the displacement curve, increase the pressure to 60MPa, then increase the temperature at a rate of 10°C / min to 1100°C, keep the temperature for 9 minutes, and reduce the pressure to the minimum after cooling down. Once sintered into porcelain. This process greatly improves the preparation efficiency; it also has the characteristics of one-time sintering into porcelain, low energy consumption, and is convenient for industrial production; it greatly reduces the resistivity of GZO ceramics and improves its electrical properties.

Description

technical field [0001] The invention belongs to Ga x Zn 1-x O (referred to as GZO) conductive ceramics preparation field. Background technique [0002] As a II-VI group n-type direct wide-gap oxide semiconductor, ZnO is a multifunctional material with many advantages, so it has attracted a lot of attention. First, the bandgap width of ZnO at room temperature is 3.37eV, and the exciton binding energy is 60meV, which is about 2.4 times that of thermal ionization energy at room temperature, which is higher than that of other wide bandgap semiconductor materials; secondly, high-quality ZnO single ZnO can be prepared by simple technology, and the content of Zn element is more in the earth's crust, so the price of ZnO devices is also relatively low; finally, ZnO is non-toxic and harmless to the environment, and is an environmentally friendly material with a high melting point and has Strong thermal and chemical stability. Therefore, it is a material that has been focused on re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/64
CPCC04B35/453C04B35/64C04B2235/3286C04B2235/666
Inventor 王越陈龙蒋毅坚梅晓平曾勇马云峰
Owner BEIJING UNIV OF TECH
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