Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and preparation method of gallium and hydrogen doped monocrystalline silicon

A solar cell, hydrogen doping technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as midpoint defects, metal defects, dislocation defects, etc., to improve conversion efficiency and increase minority carrier The effect of lifespan and simple preparation method

Pending Publication Date: 2020-12-29
四川晶科能源有限公司 +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects and metal defects, etc. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and preparation method of gallium and hydrogen doped monocrystalline silicon
  • Solar cell and preparation method of gallium and hydrogen doped monocrystalline silicon
  • Solar cell and preparation method of gallium and hydrogen doped monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0061]image 3 The flow chart of a method for preparing gallium and hydrogen doped monocrystalline silicon is provided in an embodiment of this application, such asimage 3 As shown, the preparation method includes the following steps:

[0062]Put the polysilicon raw material and the gallium dopant into the quartz crucible;

[0063]Put the quartz crucible in a single crystal furnace to vacuum, and melt the polysilicon raw material under the protection of inert gas to obtain a silicon melt;

[0064]When the temperature of the silicon melt is stable, add a hydrogen source to the single crystal furnace, and immerse the seed crystals in the silicon melt to start seeding;

[0065]After seeding is finished, start to shoulder, so that the diameter of the crystal is gradually increased to the preset width, and then the equal diameter growth is carried out;

[0066]After the isodiametric growth is completed, it enters the finishing stage, so that the diameter of the crystal is gradually reduced until it sepa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a solar cell and a preparation method of gallium and hydrogen doped monocrystalline silicon. The solar cell comprises a semiconductor substrate, a doped layer located on the front surface of the semiconductor substrate, a front surface passivation layer and / or anti-reflection layer located on the upper surface of the doped layer, a front surface electrode located on the upper surface of the front surface passivation layer and / or anti-reflection layer, a back surface passivation layer located on the back surface of the semiconductor substrate and a back surface electrodelocated on the back surface of the back surface passivation layer, wherein the semiconductor substrate comprises gallium and hydrogen-doped monocrystalline silicon, the hydrogen doping concentration in the gallium and hydrogen-doped monocrystalline silicon is 1*10<5> to 1*10<16> atoms / cm<3>, the gallium doping concentration is 1*10<15> to 5*10<17> atoms / cm<3>, and the resistivity of the gallium and hydrogen-doped monocrystalline silicon is 0.1-10 [ohm].cm. According to the solar cell, the minority carrier lifetime in monocrystalline silicon can be effectively prolonged, the passivation effectof the cell is improved, and the conversion efficiency of the solar cell is improved.

Description

Technical field[0001]This application relates to the technical field of photovoltaic cells, in particular to a method for preparing solar cells and gallium and hydrogen doped monocrystalline silicon.Background technique[0002]At present, as one of the fastest growing fields in the utilization of solar photovoltaics, the technological development of crystalline silicon cells has attracted much attention. Improving the conversion efficiency of solar cells is a problem that needs to be solved urgently. In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects, and metal defects. The existence of these defects can easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells.Summary of the invention[0003]In view of this, the embodiments of the present application provide a method for preparing solar cells and gallium- and hydrogen-doped monocrys...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/0216H01L31/0224H01L31/18C30B29/06C30B15/04
CPCH01L31/028H01L31/02168H01L31/022425H01L31/1804C30B29/06C30B15/04Y02E10/547Y02P70/50
Inventor 肖贵云白枭龙尚伟泽
Owner 四川晶科能源有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com