Gallium oxide doped tin oxide ceramic target material and preparation method thereof

A ceramic target material and tin oxide technology, which is applied in the field of gallium oxide doped tin oxide ceramic target material and its preparation, can solve the problems such as the difficulty of densification of tin oxide ceramics, and improve the density and electrical properties, improve the density, Effect of lowering densification temperature

Active Publication Date: 2021-04-30
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This invention proposes a gallium oxide-doped tin oxide ceramic target and its preparation method, which solves the problem that tin oxide ceramics are difficult to densify during the sintering process. In order to obtain high density gallium oxide doped tin dioxide ceramic target

Method used

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  • Gallium oxide doped tin oxide ceramic target material and preparation method thereof
  • Gallium oxide doped tin oxide ceramic target material and preparation method thereof
  • Gallium oxide doped tin oxide ceramic target material and preparation method thereof

Examples

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Embodiment 1

[0027] The preparation method of highly dense tin oxide doped ceramics and pressureless sintering thereof comprises the following steps:

[0028] Step 1, high-density tin oxide doped ceramics, the raw materials are prepared according to the mass percentage, which is composed of the following components: 95% of nano-scale high-purity tin oxide powder, and 5% of nano-scale high-purity gallium oxide powder. In addition, take 0.7% ammonium polyacrylate of the above powder mass as a dispersant, weigh 0.8% of the above powder mass polyvinyl alcohol as a binder, and add 70% of the above powder mass pure water to prepare a slurry;

[0029] Step 2: Put the above-mentioned powder mixture, ammonium polyacrylate, pure water and three specifications of zirconia balls into a 1L zirconia ball mill tank, and mix and ball-mill the powder on the ball mill. The ball mill needs to be carried out for 48 hours. The speed of the ball mill is 260r / min; after the ball milling is completed, add polyvin...

Embodiment 2

[0035] The preparation method of highly dense tin oxide doped ceramics and pressureless sintering thereof comprises the following steps:

[0036] Step 1, high-density tin oxide doped ceramics, the raw materials are prepared according to the mass percentage, which is composed of the following components: 90% of nano-scale high-purity tin oxide powder, and 10% of nano-scale high-purity gallium oxide powder. In addition, take 2% of the aforementioned total mass of ammonium polyacrylate as a dispersant, weigh 2% of the aforementioned total mass of polyvinyl alcohol as a binder, and add 70% of the above-mentioned powder mass of pure water to prepare a slurry;

[0037]Step 2: Put the above-mentioned powder mixture, ammonium polyacrylate, pure water and three specifications of zirconia balls into a 1L zirconia ball mill tank, and mix and ball-mill the powder on the ball mill. The ball mill needs to be carried out for 48 hours. The speed of the ball mill is 240r / min; after the ball mi...

Embodiment 3

[0043] The preparation method of highly dense tin oxide doped ceramics and pressureless sintering thereof comprises the following steps:

[0044] Step 1, high-density tin oxide doped ceramics, the raw materials are prepared according to the mass percentage, which is composed of the following components: 98% of nano-scale high-purity tin oxide powder, and 2% of nano-scale high-purity gallium oxide powder. In addition, 0.5% of the aforementioned total mass of ammonium polyacrylate was weighed as a dispersant, and 0.5% of the aforementioned total mass of polyvinyl alcohol was weighed as a binder, and 70% of the mass of the above powder was added to prepare the slurry with pure water;

[0045] Step 2: Put the above-mentioned powder mixture, ammonium polyacrylate, pure water and three specifications of zirconia balls into a 1L zirconia ball mill tank, and mix and ball-mill the powder on the ball mill. The ball mill needs to be carried out for 48 hours. The speed of the ball mill is...

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Abstract

The invention provides a gallium oxide doped tin oxide ceramic target material and a preparation method thereof. The gallium oxide doped tin oxide ceramic target material comprises the following raw materials in percentage by mass: 2-10% of gallium oxide and 90-98% of tin oxide high-purity nano powder. The preparation method comprises the following steps: weighing and mixing the powder, adding ammonium polyacrylate, polyvinyl alcohol and pure water, carrying out ball milling on the mixed slurry, granulating, drying to obtain mixed powder, sequentially carrying out compression molding by using an oil press and an isostatic press, and preparing the gallium oxide-doped tin oxide ceramic target material at different sintering temperatures by using a degreasing multi-step sintering integrated sintering technology. According to the doped gallium oxide, the sintering performance of the tin oxide ceramic is effectively improved, the density of the tin oxide ceramic target material is remarkably improved, and meanwhile the gallium oxide doped tin oxide target material which is uniform in structure and fine in grain is obtained through effective control over the preparation process.

Description

technical field [0001] The invention relates to the technical field of oxide target material preparation, in particular to a gallium oxide-doped tin oxide ceramic target material and a preparation method thereof. Background technique [0002] Tin dioxide (SnO 2 ) is an n-type semiconductor material with a wide frequency bandgap, its forbidden band width is 3.6~4.0eV, it has the characteristics of high temperature resistance, corrosion resistance, high temperature conductivity, etc. Therefore, it is widely used in the fields of gas sensors, semiconductor components and solar cells. However, pure tin dioxide ceramics have high resistivity and are not suitable for use as conductive ceramics. Furthermore, pure SnO2 without additives exhibits poor sintering properties in addition to poor electrical conductivity. One is caused by the volatilization of tin dioxide at high temperature. Studies have shown that tin oxide will volatilize violently at temperatures exceeding 1500°C. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/622C04B35/63
CPCC04B35/457C04B35/622C04B35/6303C04B2235/3286C04B2235/602C04B2235/656C04B2235/6562C04B2235/6583C04B2235/6565C04B2235/77C04B2235/786
Inventor 陈杰齐超孙本双淮志远何季麟
Owner ZHENGZHOU UNIV
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