Gallium oxide doped tin oxide ceramic target material and preparation method thereof

A ceramic target material and tin oxide technology, which is applied in the field of gallium oxide doped tin oxide ceramic target material and its preparation, can solve the problems such as the difficulty of densification of tin oxide ceramics, and improve the density and electrical properties, improve the density, Effect of lowering densification temperature
CN112723875AActive Publication Date: 2021-04-30ZHENGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHENGZHOU UNIV
Publication Date
2021-04-30

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Abstract

The invention provides a gallium oxide doped tin oxide ceramic target material and a preparation method thereof. The gallium oxide doped tin oxide ceramic target material comprises the following raw materials in percentage by mass: 2-10% of gallium oxide and 90-98% of tin oxide high-purity nano powder. The preparation method comprises the following steps: weighing and mixing the powder, adding ammonium polyacrylate, polyvinyl alcohol and pure water, carrying out ball milling on the mixed slurry, granulating, drying to obtain mixed powder, sequentially carrying out compression molding by using an oil press and an isostatic press, and preparing the gallium oxide-doped tin oxide ceramic target material at different sintering temperatures by using a degreasing multi-step sintering integrated sintering technology. According to the doped gallium oxide, the sintering performance of the tin oxide ceramic is effectively improved, the density of the tin oxide ceramic target material is remarkably improved, and meanwhile the gallium oxide doped tin oxide target material which is uniform in structure and fine in grain is obtained through effective control over the preparation process.
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Description

technical field

[0001] The invention relates to the technical field of oxide target material preparation, in particular to a gallium oxide-doped tin oxide ceramic target material and a preparation method thereof. Background technique

[0002] Tin dioxide (SnO 2 ) is an n-type semiconductor material with a wide frequency bandgap, its forbidden band width is 3.6~4.0eV, it has the characteristics of high temperature resistance, corrosion resistance, high temperature conductivity, etc. Therefore, it is widely used in the fields of gas sensors, semiconductor components and solar cells. However, pure tin dioxide ceramics have high resistivity and are not suitable for use as conductive ceramics. Furthermore, pure SnO2 without additives exhibits poor sintering properties in addition to poor electrical conductivity. One is caused by the volatilization of tin dioxide at high temperature. Studies have shown that tin oxide will volatilize violently at temperatures exceeding 1500°C. ...

Claims

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