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Electroluminescent device with dynamically adjustable wavelength and adjusting method thereof

An electroluminescent device and dynamic technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of inability to dynamically control wavelengths in real time, and achieve the effect of simple operation and simple preparation process.

Inactive Publication Date: 2021-03-09
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, by using energy band engineering, by preparing alloy semiconductor materials with different component contents, a wide range of photoluminescence wavelength regulation can be realized. The advantage is that the wavelength regulation range is large, but there is also the disadvantage that the wavelength cannot be dynamically and real-time regulation. , especially in the regulation of electroluminescence, only discrete devices with different component contents can be constructed to achieve emission of different wavelengths, and it is impossible to continuously regulate the wavelength of the same device.

Method used

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  • Electroluminescent device with dynamically adjustable wavelength and adjusting method thereof
  • Electroluminescent device with dynamically adjustable wavelength and adjusting method thereof
  • Electroluminescent device with dynamically adjustable wavelength and adjusting method thereof

Examples

Experimental program
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Embodiment 1

[0039] In this embodiment, a single gallium-doped zinc oxide micro-wire is taken as an example to modulate a point light source.

[0040] The electroluminescent device whose wavelength can be dynamically adjusted in this embodiment is prepared as follows:

[0041] (1) Select ZnO powder with a purity of 99.99%, Ga2 o 3 And the graphite powder is mixed and ground for 30 minutes according to the mass ratio of 1:0.2:1.2, and then 0.8 g of the ground mixture is filled into a corundum boat as a reaction source;

[0042] (2) Clean a 1cm×2cm silicon wafer (100) with acetone, absolute ethanol, and deionized water for 15 minutes at an ultrasonic frequency of 40KHz, and dry it with nitrogen. The quartz boat of the source is placed on one end of a quartz tube with openings at both ends, a diameter and a length of 4 cm and 15 cm, respectively, and then the quartz tube equipped with the powder source and the substrate is placed in a horizontal quartz tube furnace with a temperature of 1150...

Embodiment 2

[0049] The electroluminescent device whose wavelength can be dynamically adjusted in this embodiment is prepared as follows:

[0050] (1) Select ZnO powder with a purity of 99.8%, Ga 2 o 3 And the graphite powder is mixed and ground for 30 minutes according to the mass ratio of 1:0.4:1.4, and then 0.8 g of the ground mixture is filled into the corundum boat as a reaction source;

[0051] (2) Clean a 1cm×2cm silicon wafer (100) with acetone, absolute ethanol, and deionized water for 15 minutes at an ultrasonic frequency of 40KHz, and dry it with nitrogen. The quartz boat of the source is placed on one end of a quartz tube with openings at both ends, a diameter and a length of 4 cm and 15 cm, respectively, and then the quartz tube equipped with the powder source and the substrate is placed in a horizontal quartz tube furnace with a temperature of 1100 ° C. React for 60 minutes, cool to room temperature after the reaction and take out the sample;

[0052] (3) Use an optical mi...

Embodiment 3

[0055] The electroluminescent device whose wavelength can be dynamically adjusted in this embodiment is prepared as follows:

[0056] (1) Select ZnO powder with a purity of 99.5%, Ga 2 o 3 And the graphite powder is mixed and ground for 30 minutes according to the mass ratio of 1:0.4:1.2, and then 0.8g of the ground mixture is filled into the corundum boat as a reaction source;

[0057] (2) Clean a 1cm×2cm silicon wafer (100) with acetone, absolute ethanol, and deionized water for 15 minutes at an ultrasonic frequency of 40KHz, and dry it with nitrogen. The quartz boat of the source is placed on one end of a quartz tube with openings at both ends, a diameter and a length of 4 cm and 15 cm, respectively, and then the quartz tube equipped with the powder source and the substrate is placed in a horizontal quartz tube furnace with a temperature of 1050 ° C. React for 60 minutes, cool to room temperature after the reaction and take out the sample;

[0058] (3) Use an optical mic...

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Abstract

The invention discloses an electroluminescent device with dynamically controllable wavelength and a control method thereof. The electroluminescent device comprises a flexible substrate and a gallium-doped zinc oxide microwire arranged on the substrate, wherein two ends of the gallium-doped zinc oxide microwire are fixed on the flexible substrate and connected with electrodes; a single ZnO: Ga micron wire with excellent optical performance is used as a light emitting source, and band gap reforming is induced by applying external mechanical strain, so that dynamic and continuous regulation and control on the electroluminescent wavelength are realized. The invention provides an effective strategy for developing a light-emitting device with dynamically adjustable wavelength, is simple and convenient to operate, and has a huge application prospect in the fields of wavelength tunable point light sources, photoelectric modulators, strain sensing and the like in the future.

Description

technical field [0001] The invention relates to a light-emitting device and a control method thereof, in particular to an electroluminescence device and a control method thereof. Background technique [0002] The third-generation semiconductor materials represented by GaN have achieved great success in the field of lighting, providing a strong driving force for the development of a clean white light source. As another wide-bandgap direct-gap semiconductor material, ZnO has an exciton binding energy as high as 60meV, and is an excellent candidate material for constructing short-wavelength optoelectronic devices, especially laser devices. However, the bottleneck of p-type doping has brought many difficulties to its development and practical application. [0003] At present, some research progress has been made in the regulation of photoluminescence. For example, by using energy band engineering, by preparing alloy semiconductor materials with different component contents, a ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/24H01L33/28H01L33/48H01L33/62
CPCH01L33/0004H01L33/0029H01L33/0087H01L33/24H01L33/285H01L33/48H01L33/62H01L2933/0033H01L2933/0066
Inventor 卢俊峰姜明明阚彩侠
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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