Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, solar cell

A technology of nitrogen doping and single crystal silicon, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as reducing the conversion efficiency of solar cells, reducing the minority carrier lifetime of single crystal silicon, and midpoint defects. To achieve the effect of increasing the lifespan of the few births, improving the quality, and increasing the lifespan of the few births

Active Publication Date: 2021-09-28
JINKO SOLAR CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects and metal defects, etc. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, solar cell
  • Gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, solar cell
  • Gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, solar cell

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] figure 2 A flowchart of a method for preparing gallium, hydrogen, and nitrogen-doped single crystal silicon provided in the embodiment of the present application, as shown in figure 2 Shown, described preparation method comprises the following steps:

[0044] Put the polysilicon raw material and the gallium dopant into the quartz crucible;

[0045] Place the quartz crucible in a single crystal furnace to evacuate, and melt the polysilicon raw material under the protection of an inert gas to obtain a silicon melt;

[0046] When the temperature of the silicon melt is stable, adding a hydrogen source and a nitrogen source into the single crystal furnace, immersing the seed crystal into the silicon melt to start seeding;

[0047] After the seeding is finished, the shoulders are started, so that the diameter of the crystal gradually increases to the preset width, and then the equal-diameter growth is carried out;

[0048] After the isodiametric growth is completed, ente...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The present application relates to the field of photovoltaics. The present application provides gallium, hydrogen, and nitrogen-doped single crystal silicon and a preparation method thereof, and a solar cell. The hydrogen doping concentration in the gallium, hydrogen, and nitrogen-doped single crystal silicon is 1×10 5 ~1×10 16 atoms / cm 3 , gallium doping concentration is 1×10 15 ~5×10 17 atoms / cm 3 , with a nitrogen doping concentration of 1×10 12 ~1×10 16 atoms / cm 3 ; The resistivity of the gallium, hydrogen, nitrogen doped single crystal silicon is 0.1~10Ω·cm. The gallium, hydrogen, nitrogen-doped single crystal silicon and its preparation method and solar cell of the present application can effectively improve the minority carrier lifetime in single crystal silicon, help to improve the passivation effect of the battery, improve the mechanical strength of the silicon chip, and improve the solar cell. conversion efficiency.

Description

technical field [0001] The present application relates to the technical field of photovoltaic cells, in particular, to gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, and solar cells. Background technique [0002] At present, as one of the fastest-growing fields in solar photovoltaic utilization, the technical development of crystalline silicon cells has attracted much attention, and improving the conversion efficiency of solar cells is an urgent problem to be solved. In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects, and metal defects. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells. Contents of the invention [0003] In view of this, this application proposes gallium, hydrogen, nitrogen doped single crystal silicon and its preparation ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0288H01L31/068H01L31/18C30B29/06C30B15/04
CPCC30B15/04C30B29/06H01L31/0288H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 肖贵云白枭龙尚伟泽何丽珠
Owner JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com