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Gallium doped zinc oxide target and preparation method of transparent conductive film thereof

A transparent conductive film, zinc oxide technology, applied in the field of optoelectronic functional materials, can solve the problems of toxicity, high price, unstable ITO, etc., and achieve the effect of reducing cost, low cost and saving precious metal indium

Inactive Publication Date: 2011-09-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Tin-doped indium oxide (Indium Tin Oxide, referred to as ITO) is currently the most widely used transparent conductive film, but the metal indium (up to 90% in ITO) as the main component is a scarce resource, expensive, and toxic. It is harmful to the human body during preparation and use; in addition, when ITO is applied to solar cells, the indium in it is easy to diffuse into the device, directly affecting the performance and stability of the device, and ITO is unstable in hydrogen plasma

Method used

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  • Gallium doped zinc oxide target and preparation method of transparent conductive film thereof
  • Gallium doped zinc oxide target and preparation method of transparent conductive film thereof
  • Gallium doped zinc oxide target and preparation method of transparent conductive film thereof

Examples

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Effect test

Embodiment 1

[0021] Example 1: Preparation of gallium-doped zinc oxide target

[0022] Firstly, zinc and gallium oxide powders were prepared by solid state ball milling method. According to Ga 2 o 3 / (ZnO+Ga 2 o 3 ) mass ratio is 5% and takes by weighing zinc oxide (purity is 99.99%) powder and gallium oxide (purity is 99.99%) powder, takes by weighing the polyethylene glycol that accounts for powder gross mass 1%, takes by weighing three times Grinding balls with powder quality; put the weighed powder, polyethylene glycol and grinding balls into the ball milling jar, then add a certain amount of absolute ethanol, seal and fix the ball milling jar on the ball mill, and then / min speed ball milling for 5 hours. After ball milling, pour out the slurry, dry at 80°C for 5 hours, then pre-sinter the powder at 700°C and high-purity oxygen for 5 hours, and then sieve and granulate the powder to obtain Zinc and gallium oxide powders that can be used for target sintering have been obtained. ...

Embodiment 2

[0024] Embodiment 2: Preparation of gallium-doped zinc oxide transparent conductive film

[0025] The gallium-doped zinc oxide target prepared in Example 1 was used to prepare a transparent conductive film by magnetron sputtering. Install the target on the corresponding position of the magnetron target gun, and evacuate until the background vacuum degree of the vacuum chamber is higher than 2.0×10 -4 Pa, with quartz glass as the substrate, the substrate temperature is kept at 400°C, 20sccm argon gas (sccm means standard milliliter per minute) is introduced into the vacuum chamber, the pressure of the vacuum chamber is adjusted to 0.15Pa, and the power of the radio frequency power supply is adjusted to 100W. The target was pre-sputtered for 10 min before the formal deposition of the film. A gallium-doped zinc oxide transparent conductive film with a thickness of about 320 nm was prepared according to the above process conditions. The test shows that the crystal structure of t...

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Abstract

The invention relates to gallium doped zinc oxide target and a preparation method of a transparent conductive film thereof. The target is formed by sintering zinc and gallium oxide powder, wherein the weight content of gallium oxide is 0.5-10%; the purity of the target is no less than 99.9%; and the relative density of the target is no less than 95%, and the maximum is up to 99.5%. The transparent conductive film prepared from the target through the sputtering method has good photoelectric properties; the resistivity can be as low as 1.05*10<-4>Omega cm, the maximum transmissivity is up to 92% in the visible light range (400-800 nm), the average transmissivity is no less than 84%; and the transparent conductive film can be widely used in the fields such as solar cells, light emitting diodes, flat-panel display and liquid crystal display.

Description

technical field [0001] The invention relates to a gallium-doped zinc oxide sputtering target material and a method for preparing a transparent conductive film thereof, belonging to the technical field of optoelectronic functional materials. Background technique [0002] Transparent conductive oxide (TCO) has high transmittance to visible light, high reflectivity to infrared light, and excellent electrical conductivity, so it is widely used in solar cells and light-emitting diodes. , flat panel and liquid crystal display, various heat reflectors, and anti-fog and defrost window glass of various vehicles. Tin-doped indium oxide (Indium Tin Oxide, referred to as ITO) is currently the most widely used transparent conductive film, but the metal indium (up to 90% in ITO) as the main component is a scarce resource, expensive, and toxic. It is harmful to the human body during preparation and use; in addition, when ITO is applied to solar cells, the indium in it is easy to diffuse i...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14
Inventor 曹永革黄常刚王美丽邓种华
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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