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Gallium, hydrogen and nitrogen doped monocrystalline silicon, preparation method thereof and solar cell

A nitrogen-doped, single-crystal silicon technology, applied in single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of reducing the conversion efficiency of solar cells, reducing the minority carrier lifetime of single crystal silicon, and dislocation defects, etc. Achieve the effect of increasing the lifespan of the minority, improving the quality, and improving the lifespan of the minority

Active Publication Date: 2020-11-27
JINKO SOLAR CO LTD +1
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Problems solved by technology

In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects and metal defects, etc. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells

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  • Gallium, hydrogen and nitrogen doped monocrystalline silicon, preparation method thereof and solar cell
  • Gallium, hydrogen and nitrogen doped monocrystalline silicon, preparation method thereof and solar cell
  • Gallium, hydrogen and nitrogen doped monocrystalline silicon, preparation method thereof and solar cell

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preparation example Construction

[0043] figure 2 A flowchart of a method for preparing gallium, hydrogen, and nitrogen-doped single crystal silicon provided in the embodiment of the present application, as shown in figure 2 Shown, described preparation method comprises the following steps:

[0044] Put the polysilicon raw material and the gallium dopant into the quartz crucible;

[0045] Place the quartz crucible in a single crystal furnace to evacuate, and melt the polysilicon raw material under the protection of an inert gas to obtain a silicon melt;

[0046] When the temperature of the silicon melt is stable, adding a hydrogen source and a nitrogen source into the single crystal furnace, immersing the seed crystal into the silicon melt to start seeding;

[0047] After the seeding is finished, the shoulders are started, so that the diameter of the crystal gradually increases to the preset width, and then the equal-diameter growth is carried out;

[0048] After the isodiametric growth is completed, ente...

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Abstract

The invention relates to the field of photovoltaics. The invention provides gallium, hydrogen and nitrogen doped monocrystalline silicon, a preparation method thereof and a solar cell. The hydrogen doping concentration in the gallium, hydrogen and nitrogen doped monocrystalline silicon is 1*10 <5>-1*10<16> atoms / cm<3>, the gallium doping concentration is 1*10 <15>-5*10<17> atoms / cm<3>, and the nitrogen doping concentration is 1*10<12>-1*10<16> atoms / cm<3>; and the resistivity of the gallium, hydrogen and nitrogen doped monocrystalline silicon is 0.1-10 ohm.cm. According to the gallium, hydrogen and nitrogen doped monocrystalline silicon, the preparation method thereof and the solar cell, the minority carrier lifetime in the monocrystalline silicon can be effectively prolonged, the passivation effect of the cell is improved, the mechanical strength of a silicon wafer is improved, and the conversion efficiency of the solar cell is improved.

Description

technical field [0001] The present application relates to the technical field of photovoltaic cells, in particular, to gallium, hydrogen, nitrogen doped single crystal silicon and its preparation method, and solar cells. Background technique [0002] At present, as one of the fastest-growing fields in solar photovoltaic utilization, the technical development of crystalline silicon cells has attracted much attention, and improving the conversion efficiency of solar cells is an urgent problem to be solved. In the existing monocrystalline silicon production process, Czochralski monocrystalline silicon is prone to midpoint defects, dislocation defects, and metal defects. The existence of these defects will easily reduce the minority carrier life of monocrystalline silicon and reduce the conversion efficiency of solar cells. Contents of the invention [0003] In view of this, this application proposes gallium, hydrogen, nitrogen doped single crystal silicon and its preparation ...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B15/04H01L31/0288H01L31/068H01L31/18
CPCC30B15/04C30B29/06H01L31/0288H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 肖贵云白枭龙尚伟泽何丽珠
Owner JINKO SOLAR CO LTD
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