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Gallium-doped bismuth ferrite hypertetragonal phase epitaxial thin film and its preparation method and application

A technology of epitaxial thin film and bismuth ferrite, applied in chemical instruments and methods, crystal growth, polycrystalline material growth, etc., can solve the problems of large polarization value, relaxation, and small leakage, and achieve large and stable polarization value High performance and low leakage effect

Active Publication Date: 2020-10-09
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the thickness of the film increases, the strain will relax, leading to the transition from the supertetragonal phase to a more stable rhombohedral phase. Therefore, it is usually impossible to obtain a single-phase supertetragonal phase in BFO films with a thickness of more than 50 nm by using strain, which greatly limits its application.
Another way to stabilize the hypertetragonal phase of BFO is to insert β-Bi 2 o 3 buffer layer, but Bi 2 o 3 It is a conductive phase and can penetrate into the BFO layer, causing serious leakage problems
Therefore, BFO-based supertetragonal thin films with stability, large polarization value, and low leakage cannot be obtained in the prior art.

Method used

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  • Gallium-doped bismuth ferrite hypertetragonal phase epitaxial thin film and its preparation method and application
  • Gallium-doped bismuth ferrite hypertetragonal phase epitaxial thin film and its preparation method and application
  • Gallium-doped bismuth ferrite hypertetragonal phase epitaxial thin film and its preparation method and application

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Embodiment 1

[0027] The gallium-doped bismuth ferrite supertetragonal phase epitaxial thin film of the present invention is prepared by the following method:

[0028] S1: set Bi 2 o 3 , Fe 2 o 3 and Ga 2 o 3 After mixing, they are sintered and pressed into BFGO blocks.

[0029] Weigh high-purity Bi according to the molar ratio of 1.1:0.6:0.4 2 o 3 , Fe 2 o 3 and Ga 2 o 3 The powder is 60g in total, mixed evenly and then ground, then pre-fired at 650°C for 12h. Grinding and ball milling are performed again after calcining, and the target is pressed after adding PVA binder. After pressing and sintering at 830 °C for 2 h, BFGO blocks were obtained.

[0030] S2: Deposit BFGO on the substrate to obtain BFGO film.

[0031] Take the BFGO block as the target material, put it into the target holder in the magnetron sputtering chamber, and then put (001) oriented NdCaAlO on the sample stage in the chamber 4 (abbreviated as NCAO) single crystal substrate, and the distance between the t...

Embodiment 2

[0037] The gallium-doped bismuth ferrite supertetragonal phase epitaxial thin film of the present invention is also prepared by the following method:

[0038] S1: set Bi 2 o 3 , Fe 2 o 3 and Ga 2 o 3 After mixing, they are sintered and pressed into BFGO blocks.

[0039] Weigh high-purity Bi according to the molar ratio of 1.1:0.6:0.4 2 o 3 , Fe 2 o 3 and Ga 2 o 3 The powder is 60g in total, mixed evenly and then ground, then pre-fired at 650°C for 12h. Grinding and ball milling are performed again after calcining, and the target is pressed after adding PVA binder. After pressing and sintering at 830 °C for 2 h, BFGO blocks were obtained.

[0040] S2: BFGO is deposited on the substrate to obtain gallium-doped bismuth ferrite supertetragonal phase epitaxial film.

[0041] In a pulsed laser deposition system, LaAlO with (001) orientation 3 (abbreviated as LAO) as the substrate, the BFGO block as the target, and the target spacing is adjusted to 5cm, and the vacuum ...

Embodiment 3

[0044] The gallium-doped bismuth ferrite supertetragonal phase epitaxial thin film of the present invention is prepared by the following method:

[0045] S1: set Bi 2 o 3 , Fe 2 o 3 and Ga 2 o 3 After mixing, they are sintered and pressed into BFGO blocks.

[0046] Weigh high-purity Bi according to the molar ratio of 1.1:0.5:0.5 2 o 3 , Fe 2 o 3 and Ga 2 o 3 The powder is 60g in total, mixed evenly and then ground, then pre-fired at 650°C for 12h. Grinding and ball milling are performed again after calcining, and the target is pressed after adding PVA binder. After pressing and sintering at 830 °C for 2 h, BFGO blocks were obtained.

[0047] S2: Deposit BFGO on the substrate to obtain BFGO film.

[0048] Take the BFGO block as the target material, put it into the target holder in the magnetron sputtering chamber, and then put (001) oriented NdCaAlO on the sample stage in the chamber 4 (abbreviated as NCAO) single crystal substrate, and the distance between the t...

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Abstract

The invention provides a Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film as well as a preparation method and an application thereof. The preparation method of the Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film comprises steps as follows: S1: Bi2O3, Fe2O3 and Ga2O3 are mixed, and then a Ga-doped BiFeO3 block is formed through sintering and pressing; and S2: Ga-doped BiFeO3 isdeposited on a substrate, and the Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film is obtained. The Ga-doped BiFeO3 ultra-tetragonal-phase epitaxial thin film can be used for manufacturingof capacitors. According to the thin film, the preparation method and the application, BiFeO3 is doped with Ga, Ga atoms replace Fe atoms, the distortion degree of the oxygen octahedron is increased,one oxygen atom in the c-axis direction gets close to the central Ga atom, another oxygen atom gets far away from the central Ga atom, the oxygen octahedron is transformed into the oxygen tetrahedralcone, thus the length in the c-axis direction is increased, the ultra-tetragonal phase is stabilized, and the BiFeO3 ultra-tetragonal-phase epitaxial thin film is not limited by factors such as the thickness of the thin film, the strain of the substrate, the buffer layer and the like.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film materials, and in particular relates to a gallium-doped bismuth ferrite supertetragonal epitaxial thin film and a preparation method and application thereof. Background technique [0002] With the rapid development of emerging electronic information industries such as big data, Internet of Things, and artificial intelligence, people's demand for a new generation of high-density, low-power, and multi-functional information storage technology is increasing. At present, the storage density of commercial silicon-based chips is close to the limit of Moore's law, so there is an urgent need to develop storage devices based on new materials and new mechanisms. Multiferroic materials are a class of multifunctional materials with both ferroelectricity (antiferroelectricity) and ferromagnetism (antiferromagnetism), which can realize mutual regulation between electricity and magnetism, such as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/34C23C14/35C30B23/02C30B29/22
CPCC23C14/08C23C14/3414C23C14/3485C23C14/35C30B23/025C30B29/22
Inventor 樊贞谭政伟田俊江
Owner SOUTH CHINA NORMAL UNIVERSITY
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