The application belongs to the technical field of solar cells, and discloses a GaAs / PEDOT:PSS
hybrid solar cell with a defect-engineered
interface layer and a preparation method. The
solar cell comprises, from bottom to top, a back
electrode, a substrate, a
vanadium pentoxide interface layer with
oxygen vacancies, a PEDOT:PSS / Ag
nanowire composite layer, and a top
electrode. The
oxygen vacancy concentration in the
vanadium pentoxide interface layer with
oxygen vacancies is 0.45% to 7.78%, and the thickness is 8 to 17 nm. The composite layer is obtained by compounding PEDOT:PSS and Ag nanowires. The application also discloses a preparation method of the
solar cell. The interface layer of the application blocks the
corrosion of acidic components, suppresses the surface load of electrons, and assists in hole transport. The application effectively solves the efficiency
bottleneck problem caused by acidic
corrosion and interface recombination, improves the performance of the solar
cell, and makes the solar
cell have high conversion efficiency.