Silicon-PEDOT: PSS hybrid solar cell and preparation method thereof

A solar cell and hybridization technology, applied in the field of solar cells, can solve problems such as low electron mobility, low photoelectric conversion efficiency, and loss of organic photovoltaic cells, and achieve the effects of increasing the contact area, enhancing the built-in potential, and improving the work function

Active Publication Date: 2018-04-20
苏州亚傲鑫企业管理咨询有限公司
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For organic materials, the electron mobility is generally low, and the loss is serious during the el...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-PEDOT: PSS hybrid solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] A method for preparing a silicon-PEDOT:PSS hybrid solar cell proposed in a specific embodiment of the present invention includes the following steps: (1) cleaning of the silicon substrate: ultrasonically cleaning the n-type silicon wafer in acetone, ethanol, and deionized water successively 10-30 minutes, and blow dry with nitrogen, then place the dried n-type silicon chip in a concentrated sulfuric acid / hydrogen peroxide mixed solution, heat treatment at 100-120°C for 40-60 minutes, and then rinse the n-type silicon chip with deionized water , and finally utilize hydrofluoric acid to remove the natural silicon oxide layer on the surface of the n-type silicon wafer; (2) surface passivation treatment of the silicon substrate: the n-type silicon wafer obtained in step 1 is blown dry with nitrogen, then immersed in saturated pentachloro In the chlorobenzene solution of phosphorus pentachloride, heat treatment at 110°C for 40-60 minutes, then the n-type silicon chip was take...

Embodiment 1

[0023] A kind of preparation method of silicon-PEDOT:PSS hybrid solar cell, comprises the following steps: (1) cleaning of silicon substrate: the n-type silicon chip is cleaned in acetone, ethanol, deionized water successively ultrasonic cleaning 20 minutes, and dry with nitrogen , then place the dried n-type silicon wafer in a concentrated sulfuric acid / hydrogen peroxide mixed solution, heat-treat it at 110°C for 50 minutes, then rinse the n-type silicon wafer with deionized water, and finally remove the n-type silicon wafer with hydrofluoric acid (2) surface passivation treatment of the silicon substrate: dry the n-type silicon wafer obtained in step 1 with nitrogen, then immerse it in a chlorobenzene solution saturated with phosphorus pentachloride, and heat treat it at 110°C 60 minutes, then the n-type silicon chip was taken out from the chlorobenzene solution of saturated phosphorus pentachloride and washed in chlorobenzene and tetrahydrofuran successively, and then the n-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a silicon-PEDOT: PSS hybrid solar cell and a preparation method thereof for improving the photoelectric conversion efficiency of the silicon-PEDOT: PSS hybrid solar cell. Thepreparation method of the silicon-PEDOT: PSS hybrid solar cell comprises the steps of: cleaning a silicon substrate; passivating the surface of the silicon substrate; preparing a silicon nano-wire/PEDOT: PSS composite film; preparing a PEDOT: PSS/cuprous sulfide nano-particle/graphene oxide composite conductive layer; preparing a back interface layer; preparing a front silver gate electrode; and preparing a back electrode.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a silicon-PEDOT:PSS hybrid solar cell and a preparation method thereof. Background technique [0002] Inorganic solar cells cannot be used on a large scale because of their high cost. Organic solar cells are expected to reduce the production cost of solar cells due to their advantages such as cheap materials, low annealing temperature, and simple fabrication process. However, the efficiency of organic solar cells is much lower than that of inorganic solar cells. Therefore, organic-inorganic hybrid solar cells based on inorganic and organic semiconductor materials are increasingly favored by people, which provides a production technology that can simplify manufacturing steps and reduce costs. Compared with organic materials, inorganic materials have the biggest advantage of high carrier mobility, which means that the material has a long mean free path and can effectively redu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0224H01L31/0352H01L31/072H01L31/18
CPCH01L31/022425H01L31/035281H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 赵红英
Owner 苏州亚傲鑫企业管理咨询有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap