LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT

Abstract

A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CH_x)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

Description

RELATED APPLICATIONS[0001]This application is related to U.S. Ser. No. ______, (Attorney docket YOR920060748US1; SSMP 20357-1), which cross referenced application is being filed concurrently on the same date as the present application.FIELD OF THE INVENTION[0002]The present invention relates to a semiconductor dielectric film as well as a method of fabricating such a film. More particularly, the present invention relates to a porous dielectric material comprising atoms of at least Si, C, O and H (hereinafter p-SiCOH dielectric) which has a low dielectric constant (k of about 2.7 or less), enhanced post processing stability and improved film properties as compared with prior art p-SiCOH dielectrics. The present invention also relates to a method of fabricating such a p-SiCOH dielectric as well as the use of the same as a dielectric in various semiconductor structures, including, for example, interconnect structures.BACKGROUND OF THE INVENTION[0003]The continuous shrinking in dimensio...

AI Technical Summary

Benefits of technology

[0011]The present invention provides a porous SiCOH (p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized. In other terms, the inventive porous SiCOH dielectric film has less Si—O—Si bonding as compared to prior art p-SiCOH dielectric films. Moreover, a stable p-SiOCH dielectric film is provided in which the amount of Si—OH (silanol) and/or Si—H grou

Problems solved by technology

This combined effect increases signal delays in ULSI electronic devices.

The formation of Si—O—Si bonds, in turn, incre

Images