59results about How to "Surface roughening" patented technology

A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

A technique for reducing the appearance of Newton's rings for a light emitting device is disclosed. The light emitting device comprises a scattering layer positioned contiguous with the inner surface of a cover substrate. Scattering the light reduces or eliminates the opportunity for constructive interference and as a result reduces or eliminates Newton's ring formation.

A method of dissecting urethra obstructing tissue. The method includes capturing urethra obstructing tissue between portions of an implant and applying pressure on the tissue caught between the portions of the implant, for longer than 1 hour, until the tissue dies or falls off.

The invention relates to a metallic implant, which has vitreous-crystalline bioactive material on the surface thereof. According to the invention, a metallic implant base body arranged on the surface of the particles has a bioactive, vitreous-crystalline material consisting of 15-45 wt. % CaO, 40-45 wt. % P2O5, 10-40 wt. % ZrO2 and 0.7-3.5 wt. % fluoride, having apatite and calcium zirconium phosphate as main crystalline and a glass phase as an auxiliary component. Said vitreous crystalline material contains at least 35 wt. % main crystal phases and at least 5-15 wt. % auxiliary compounds. All of the percentage data is expressed in relation to the total weight of the vitreous crystalline material and the particle size of the vitreous crystalline material is between 60-350 mum.

A heat exchanger apparatus and method of manufacturing comprising: an interface layer for cooling a heat source and configured to pass fluid therethrough, the interface layer having an appropriate thermal conductivity and a manifold layer for providing fluid to the interface layer, wherein the manifold layer is configured to achieve temperature uniformity in the heat source preferably by cooling interface hot spot regions. A plurality of fluid ports are configured to the heat exchanger such as an inlet port and outlet port, whereby the fluid ports are configured vertically and horizontally. The manifold layer circulates fluid to a predetermined interface hot spot region in the interface layer, wherein the interface hot spot region is associated with the hot spot. The heat exchanger preferably includes an intermediate layer positioned between the interface and manifold layers and optimally channels fluid to the interface hot spot region.

Disclosed is a metallic pigment which enables to provide a coating film with very brilliant appearance and excellent corrosion resistance at the same time. Also disclosed is a coating material containing such a metallic pigment. Specifically disclosed is a metallic pigment which is composed of aluminum particles as the base particles whose surfaces are covered with a coating-layer composed of one or more layers. The outermost layer of the coating-layer contains a polymer which is obtained by polymerizing a monomer having a basic group and at least one polymerizable double bond. The monomer may preferably contain nitrogen. The metallic pigment may preferably be provided with a surface modification layer. Also specifically disclosed is a coating material containing such a metallic pigment.

An electronic component having: a substrate, a lower conductor layer provided on the substrate; an inorganic dielectric film that covers the lower conductor layer; and an upper conductor layer having an upper electrode portion provided on the inorganic dielectric film. The lower conductor layer has a lower electrode portion that together with the upper electrode portion and the inorganic dielectric film constitutes a capacitor, and a coil portion that constitutes an inductor. The entire inorganic dielectric film is formed integrally, and the lower conductor layer is in contact only with the substrate, inorganic dielectric film, and upper conductor layer.

A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer on top of the p-type contact layer and a p-type roughened contact layer on top of the masking buffer layer. The masking buffer layer could be formed using MOCVD to deposit Si_xN_y (x,y≧1), Mg_wN_z (w,z≧1), or Al_sIn_tGa_1-s-tN (0≦s,t<1, s+t≦1) heavily doped with Si and/or Mg. The masking buffer layer is actually a mask containing multiple randomly distributed clusters. Then, on top of the masking buffer layer, a p-type roughened contact layer made of p-type Al_uIn_vGa_1-u-vN (0≦u,v<1, u+v≦1) is developed. The p-type roughened contact layer does not grow directly on top of the masking buffer layer. Instead, the p-type roughened contact layer starts from the top surface of the underlying p-type contact layer not covered by the masking buffer layer's clusters. The p-type roughened contact layer then grows upward until it passes (but does not cover) the mask of the masking buffer layer for a specific distance. The total internal reflection that could have been resulted from the GaN-based LEDs' higher index of refraction than that of the atmosphere could be avoided. The GaN-based LEDs according to the present invention therefore have superior external quantum efficiency and luminous efficiency.

A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.

In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

A method for processing a surface of a component, in particular in the aviation sector, including the following steps: spraying the component with a first powder and coating the component with a second powder, the first powder having the same chemical composition as the second powder.

A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF excimer laser exposure light is disclosed. The mask blank has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has an at least two-layer structure including a lower layer and an upper layer from the transparent substrate side. The lower layer is made of a material composed of a transition metal, silicon, and nitrogen and having a nitrogen content of 21 at % or more and a refractive index n of 1.9 or less. The upper layer is made of a material composed of a transition metal, silicon, and nitrogen and having a refractive index n of 2.1 or less. A surface layer of the upper layer contains oxygen and has a nitrogen content of 14 at % or more.

In a lithium cell using lithium foil or lithium alloy foil as an anode active substance, the main surface of an anodic current-collecting plate in direct contact with the lithium foil or the lithium alloy foil is roughened by laser machining.

A nitrile rubber solution prepared by dissolving and dispersing into an organic solvent a nitrile rubber composition comprising 100 parts by weight of nitrile rubber, 40 parts by weight or more of carbon black having a DBP oil absorption amount of 30-100 ml/100 g (according to ASTM D1765-91), 15-100 parts by weight of silica having particle sizes of 0.01-0.1 μm, 0-40 parts by weight of other inorganic filler than the carbon black and silica, and 5-20 parts by weight of an organic peroxide, and preferably further containing 2-10 parts by weight of a silane coupling agent is applied to an adhesive layer on one side or both sides of a metallic sheet, followed by vulcanizing the coated layer, thereby forming a rubber layer.

The invention relates to a tube (2) and a steerable introduction element like a catheter, an endoscope or a sheath comprising the tube. The tube comprises a composite material including a shape memory alloy material (12) and a non-shape-memory polymer material (22). The tube is used for making the introduction element steerable in a relatively easy way by modifying the temperature of the tube as required for achieving a preferred bending of the introduction element. By using this steering mechanism the introduction element can be positioned relatively accurately, because the composite material includes a non-shape-memory polymer material, which is more stable than, for instance, a shape-memory polymer material and which may be optimized for other properties like hardness, stiffness, et cetera. Furthermore, using the tube for steering an introduction element can lead to cost reductions and can enable miniaturization.

A GaN-based LED structure is provided so that the brightness and luminous efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a masking buffer layer and a roughened contact layer on top of the masking buffer layer. The masking buffer layer contains randomly distributed clusters made of a group-IV nitride Si_xN_y (x,y≧1), a group-II nitride Mg_wN_z (w,z≧1), or a group-III nitride Al_sIn_tGa_1-s-tN (0≦s,t<1, s+t≦1) heavily doped with at least a group-II and group-IV element such as Mg and Si. The roughened contact layer, made of Al_uIn_vGa_1-u-vN (0≦u,v<1, u+v≦1), starts from the top surface of an underlying second contact layer not covered by the masking buffer layer's clusters, and then grows upward until it passes (but does not cover) the clusters of the masking buffer layer for an appropriate distance. The total internal reflection that could have been resulted from the GaN-based LEDs' higher index of refraction than that of the atmosphere could be avoided.