30results about How to "Crystal growth" patented technology

The invention discloses a method for efficient flotation production of KCL through sequential separation of sylvite ore, and relates to a method for producing KCl from sylvite ore. According to the technical scheme, the method comprises the steps that after the sylvite ore is manufactured into the certain granularity, pulping, desalting, coarse KCL grain separation, coarse KCl grain washing, fine KCl grain floatation, fine KCl grain washing, dehydration and drying are performed to obtain crude KCl grain products and fine KCl grain products with the purity being 95% or more are obtained; on the basis of advanced separation of some NaCl tail salt and crude KCL grains before KCL floatation or during floatation, the KCL floatation amount is decreased, the floatation strength is lowered, the equipment input is decreased, the building investment is lowered, the floatation reagent consumption is reduced, the environment-friendly pressure is relieved, the mineral separation energy consumption is reduced, the production cost is lowered, the product type is optimized, the product quality is improved, and the KCL recycling rate is increased; the method is mainly used for washing machining of carnallite and sylvine ore of deposit mining.

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

The present invention relates to a method for preparing anatase-type titanium dioxide (TiO2) nanoparticles, the method comprising the steps of: uniformly mixing titanium n-butoxide and cetyltrimethyl ammonium salt (CTAS) in water; subjecting the mixture to hydrothermal treatment at a temperature of 60˜120° C.; and collecting anatase-type titanium dioxide nanoparticles produced by the hydrothermal treatment and drying the collected nanoparticles. According to the present invention, anatase-type titanium dioxide nanoparticles having excellent crystallinity can be easily prepared in large amounts by a simple process without needing heat treatment.

A method for controlling the crystalline products in a wet flue gas desulfurization slurry pool belongs to the technical field of flue gas desulfurization. The method comprises the following steps thaA method for controlling the crystalline products in a wet flue gas desulfurization slurry pool belongs to the technical field of flue gas desulfurization. The method comprises the following steps thaver high saturation of calcium sulfite in the liquid phase for synchronizing the yield and growth of gypsum crystal in the slurry, to prevent excessive production of gypsum fine crystal and to facilitver high saturation of calcium sulfite in the liquid phase for synchronizing the yield and growth of gypsum crystal in the slurry, to prevent excessive production of gypsum fine crystal and to facilitate the dehydration of the crystalline products.ate the dehydration of the crystalline products.t: for an absorber which has a flue gas purification channel on top, a raw flue gas inlet in the middle and a slurry pool at bottom, the saturation of calcium sulfite in a liquid phase in the slurry pt: for an absorber which has a flue gas purification channel on top, a raw flue gas inlet in the middle and a slurry pool at bottom, the saturation of calcium sulfite in a liquid phase in the slurry pool can be quickly reduced by controlling the required volume of injected oxygen in the slurry pool and the oxygen supply is kept constantly in a proper state to prevent semi-hydrated gypsum and crystool can be quickly reduced by controlling the required volume of injected oxygen in the slurry pool and the oxygen supply is kept constantly in a proper state to prevent semi-hydrated gypsum and crystal scale generated due to inadequate filling of oxygen in the slurry pool from causing scale to block the vessel wall and pipe wall of the slurry pool and to provent the crystalline products from dehyal scale generated due to inadequate filling of oxygen in the slurry pool from causing scale to block the vessel wall and pipe wall of the slurry pool and to provent the crystalline products from dehydrating difficultly; the injection amount of the limestone slurry in the slurry pool is controlled to control the fluctuation range of the pH value of the gypsum slurry in the slurry pool to prevent odrating difficultly; the injection amount of the limestone slurry in the slurry pool is controlled to control the fluctuation range of the pH value of the gypsum slurry in the slurry pool to prevent o

Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus.

Disclosed are an epoxy resin compound and a radiant heat circuit board using the same. The epoxy resin compound mainly includes an epoxy resin, a curing agent, and an inorganic filler. The curing agent comprises epoxy adducts formed to add the curing agent to a crystalline epoxy resin. The epoxy resin is used on a printed circuit board as an insulating material, so that a substrate having a high heat radiation property is provided.

Disclosed is a method for facilitating preparation of high quality crystals suitable for X-ray crystallographic studies. The method comprises that an electric charge or current is provided to a saturated solution of the molecule to be crystallized, preferably via a jet of gaseous ions. Also disclosed is an assembly for carrying out the method of the invention.

The invention relates to a preparation method of lithium manganese phosphate, which includes the following steps: mixing and dissolving a divalent manganese source, a lithium source and a phosphate source in a solvothermal reaction medium to form a mixed solution. The solvothermal reaction medium includes an organic solvent. and a co-solvent; and subjecting the mixed solution to a solvothermal reaction to obtain the reaction product lithium manganese phosphate. The invention also relates to a preparation method of lithium manganese phosphate / carbon composite material.

The invention discloses a method for preparing a nano cathode material of a lithium ion battery at a low cost. A basic structural formula of the cathode material of the lithium ion battery is Li4Ti5O12 with a cubical spinel structure. The method is characterized by comprising the following steps of (1) sufficiently mixing a lithium salt precursor, TiO2 and a carbon precursor in a water, aqueous solution or solvent environment to obtain a precursor suspension; (2) grinding the precursor suspension; (3) drying the precursor suspension to obtain a precursor mixture; (4) carrying out calcinations on the precursor mixture in an inert atmosphere or inert and air atmosphere; and (5) smashing and grading the clacinated product to obtain a Li4Ti5O12 cathode material or Li4Ti5O12 / C composite cathode material. The Li4Ti5O12 cathode material and the Li4Ti5O12 / C composite cathode material have excellent electrochemical performance. The invention also provides a nano-electrochemically active cathode material with low cost and uniform particle size distribution produced by the method, and electrodes and batteries manufactured by the nano-electrochemically active cathode material.

A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.