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Three-dimensional memory and preparation method thereof

A memory, three-dimensional technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of limiting unit storage density, improvement, etc., and achieve the effect of increasing unit storage density

Active Publication Date: 2021-09-17
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these arrangements will limit the improvement of unit storage density

Method used

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  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof

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Embodiment Construction

[0036] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way.

[0037] The terminology used herein is for the purpose of describing particular exemplary embodiments and is not intended to be limiting. When used in this specification, the terms "comprises", "includes", "includes" and / or "includes" indicate the presence of said features, integers, elements, components and / or combinations thereof, but do not exclude The presence of one or more other features, integers, elements, components and / or combinations thereof.

[0038] The description herein is made with reference to schematic illustrations of exemplary embodiments. Exemplary embodiments disclosed herein should not be constru...

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Abstract

The invention provides a three-dimensional memory and a preparation method thereof. The method comprises the following steps: forming a storage laminated structure on a substrate and forming a storage channel structure penetrating through the storage laminated structure; forming a selection laminated structure laminated on the storage laminated structure and a selection channel structure penetrating through the selection laminated structure and connected with the storage channel structure, wherein the size of the selection channel structure is smaller than that of the storage channel structure on a plane parallel to the substrate; and forming a top selection gate cut structure penetrating through the selection laminated structure. According to the three-dimensional memory and the preparation method thereof, the process window of the top selection gate notch structure formed between the selection channel structures can be increased, and the unit memory density can be improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and more specifically, to a three-dimensional storage device and a manufacturing method thereof. Background technique [0002] Three-dimensional memory (3D NAND) can increase its storage capacity by increasing the number of vertically stacked layers or the unit storage density of the channel structure. Specifically, the unit storage density of the three-dimensional memory can be increased by optimizing the layout of the channel structure. [0003] In some arrangements of channel structures, the channel structures are divided into nine rows within the memory block in a staggered arrangement, and top select gate cuts (TSG) are located between the rows of channel structures to divide the channel structures in the memory block into nine rows. The track structure row is divided into several parts, so that it is convenient to control the divided memory blocks for programming, erasing ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11582H01L27/11565H10B43/35H10B41/27H10B43/10H10B43/27
CPCH10B43/35H10B43/10H10B43/27H10B43/50H10B41/27
Inventor 高庭庭夏志良刘小欣孙昌志杜小龙
Owner YANGTZE MEMORY TECH CO LTD
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