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Semiconductor device, hard mask structure and manufacturing method thereof

A manufacturing method and hard mask technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting product quality, poor uniformity of key dimensions of hard mask patterns, etc., to avoid different etching degrees , The effect of uniformity improvement

Inactive Publication Date: 2020-03-17
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
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Problems solved by technology

When forming a hard mask pattern by plasma etching, the distribution of plasma gradually becomes denser or sparser from the center to the edge, so that the etching rate decreases or increases from the central area to the edge area in the etching range, The critical dimension uniformity of the hard mask pattern is poor, which affects product quality

Method used

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  • Semiconductor device, hard mask structure and manufacturing method thereof
  • Semiconductor device, hard mask structure and manufacturing method thereof
  • Semiconductor device, hard mask structure and manufacturing method thereof

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Embodiment Construction

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0045] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over so...

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Abstract

The invention provides a semiconductor device, a hard mask structure and a manufacturing method of the hard mask structure, and relates to the technical field of semiconductors. The manufacturing method comprises the following steps: forming a mask material layer on a substrate, wherein the thickness of the mask material layer is gradually reduced or increased from the center to the edge of the mask material layer; forming a photoresist layer on the surface, far away from the substrate, of the mask material layer; exposing and developing the photoresist layer to form a plurality of developingareas, and exposing the mask material layer in each developing area; etching the mask material layer in the developing area to form a mask pattern; and removing the photoresist layer. According to themanufacturing method of the hard mask structure, the uniformity of the critical dimension can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a semiconductor device, a hard mask structure, and a method for manufacturing the hard mask structure. Background technique [0002] Hard Mask is mainly used in multiple photolithography processes. Specifically, multiple photoresist images can be transferred to the hard mask first, and then the final pattern etching can be transferred to the substrate through the hard mask. . When forming a hard mask pattern by plasma etching, the distribution of plasma gradually becomes denser or sparser from the center to the edge, so that the etching rate decreases or increases from the central area to the edge area in the etching range, As a result, the uniformity of critical dimensions of the pattern of the hard mask is poor, which affects product quality. [0003] It should be noted that the information disclosed in the above background section is only for enhancing t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/033
CPCH01L21/0334
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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