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Method for forming three-dimensional memory and three-dimensional memory

A memory, three-dimensional technology, applied in electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as increasing process cost and increasing process difficulty, and achieves the effect of reducing process cost, reducing process difficulty, and shortening process cycle.

Inactive Publication Date: 2019-05-28
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to electrically connect the source and the drain, the line width and spacing of the bit lines will be correspondingly reduced, and the reduction of the bit line spacing will lead to serious inter-metal coupling effects (Inter-Metal Coupling Effects), which will not only improve The difficulty of the process, and will significantly increase the cost of the process

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  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory
  • Method for forming three-dimensional memory and three-dimensional memory

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Embodiment Construction

[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0034] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0035] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention provides a method for forming a three-dimensional memory, comprising: providing a semiconductor structure, wherein the semiconductor structure is provided with a substrate and a stackingstructure positioned on the substrate, and the stacking structure is provided with a top select gate; forming a wavy top select gate-cut in the top select gate, wherein the top select gate is dividedinto a plurality of mutually insulated regions by the top select gate-cut; and forming channel holes and wave-shaped grid line gaps penetrating through the stacking structure, filling the channel holes to form a vertical channel structure, and forming an array common source, wherein the top selection gate-cut is located between the channel holes of the adjacent regions.

Description

technical field [0001] The invention mainly relates to a semiconductor manufacturing method, in particular to a method for forming a three-dimensional memory and the three-dimensional memory. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed and mass-produced memory devices with three-dimensional (3D) structures. By continuously increasing the number of gate (Gateline, GL) stacked layers and reducing the size and bit Line width, to continuously improve the integration density. [0003] In a three-dimensional memory device such as 3D NAND flash memory, the memory array may include a core array (Core Array) region having a channel structure. The channel holes of the stacked layers are usually formed by a single etch. However, in order to increase the storage density and capacity, the number of layers (Tier) of the three-dimensional memory continues to increase, for example, from 64 layers to 96 la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11556H01L27/1157H01L27/11582H10B41/35H10B41/27H10B43/27H10B43/35
Inventor 肖莉红
Owner YANGTZE MEMORY TECH CO LTD
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