58 results about "Carbon plasma" patented technology

A process for producing single-walled carbon nanotubes in a continuous manner includes carbon plasma generation, plasma stabilization, and product deposition. The plasma is generated by electrical resistance heating or electron beam vaporization of feedstock. The plasma is stabilized with radio frequency energy from inductance coils and with electrical resistance heaters in the reactor. Stabilization homogenizes the plasma energy density and concentration, leading to a more efficient reactor. Finally, a transition metal catalyst and associated catalyst support are used to form the end product. The formation region may have variations of geometry and supporting equipment that will affect the rate and purity of the swcnt production. The formation region is immediately downstream from the plasma stabilization region. In addition, the entire apparatus is designed so that it can be mounted vertically such that continuous deposition of product can be applied with precision using an overhead robotic arm.

The present invention provides a pulsed carbon plasma apparatus to produce a diamond-like carbon coating over an extended object, the coating having a high degree of thickness uniformity achieved by scanning the plasma flow over the surface of the object. The pulsed carbon plasma apparatus of the invention comprises a carbon plasma flow scanning device having at least one pair of deflecting coils, where the deflecting coils have, in the scanning plane, a different number of turns on opposite sides. The object may be made of metal, ceramic, glass or plastic. The coatings may be used to improve life and operating performance of tools and machine parts, and as decorative coatings.

A method of surface pretreatment before selective epitaxial growth is provided. A semiconductor substrate having metal-oxide-semiconductor devices formed thereon is provided, and a lightly dry etching process with a carbon-free plasma source is performed to remove a portion of the semiconductor substrate. Then, a selective epitaxial growth process is performed to form a semiconductor layer on the semiconductor substrate. A clean surface for selective epitaxial growth is provided by the lightly dry etching process, which can resolve the undercut issue and surface roughness.

The a cathode-arc source of metal plasma with filtration, used, in particular, for deposition of DLC, utilizes the effect of fast ions reflection from the Hall stratum in a transversal arched magnetic field to filtrate vacuum arc plasma arc from contaminating macroparticles and vapor. Various embodiments for producing maximal plasma flux at the source outlet, in particular, a pulse source with more the one cathode units for deposition of coating inside pipes/cavities, for deposition of coating in a stationary/quasi-stationary condition are offered. The cathode is made of a consumable material and is exposed to poles of magnets on both ends of cathode for creating a transversal magnetic field of an arched configuration in a discharge gap between the cathode and the anode. The anode geometry adequate to the mechanism of the arc current passage through a transversal magnetic field is offered. To avoid longitudinal and transverse short circuits of the current layer, an installation of non-conducting surfaces at ends or sectioned shields under a floating potential at the cathode sides is provided. The method of creating the Hall stratum in said transversal magnetic field of arched configuration is offered.

The invention discloses a method for preparing diamond-like carbon film (DLC), belonging to the metal or non-metal surface modification treatment technical field. The method adopts pulsed arc discharge by using graphite as a cathode electrode and a physically and chemically combined vapor deposition method for the decomposition and ionization of hydrocarbons gas to produce DLC deposition on a surface of a workpiece. The invention comprises the main operation steps of ultrasonic cleaning, vacuumizing, ion cleaning and DLC deposition, wherein argon gas is passed through in the ion cleaning step; a pulse frequency of the arc discharge in the DLC deposition step is 5 and 35Hz with voltage of between 200 and 400V; methane, ethane or propane are preferred as the hydrocarbons gas. A high-speed and high-energy carbon plasma ion beam is formed to generate collide decomposition and ionization to the passed through hydrocarbons gas through specific pulsed arc discharge to increase increasing density of the carbon ion and diffraction performance, thereby improving deposition speed and adhesive force of DLC, reducing internal stress, and improving precision and performance of DLC.

The vacuum-cathode arc source is adopted in the invention and the graphite is as the target cathode. Using the carbon plasma generated by the vacuum-cathode graphite arc deposits the diamond-like film on the diaphragm to be coated. The ivnention can produce in batch size of the compound speaker diaphragm coated with diamond like film in various shape specifications with good performances. The invention raises the frequency response characteristics of the speakers and improves the sound quality.

A system and method of carburizing a surface region of an object includes subjecting a gas to electromagnetic radiation, generated from a radiation source (52), in the presence of a plasma catalyst (70) to initiate a plasma containing carbon. The method also includes exposing the surface region of the object to the plasma for a period of time sufficient to transfer at least some of the carbon from the plasma to the object through the first surface region.

The invention provides an organic light emitting diode (OLED), having a substrate, an anode layer of silver or gold, wherein the anode layer Is treated with CF₄ plasma to enhance the hole injection of the semitransparent anode layer.

A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source/drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.

A hybrid coating structure (500) includes a substrate (510) and a hybrid coating (100). The hybrid coating further includes a number of diamond-like carbon grains (110), each grains containing a number of superhard nano-particles (120) incorporated therein; and a number of corrosion-resistant nano-particles (130). The superhard nano-particles are comprised of a material selected from the group consisting of silicon carbide, titanium carbide, and titanium nitride. The corrosion-resistant nano-particles are comprised of a material selected from the group consisting of chrome and chrome nitride. A method for making a hybrid coating structure includes steps of: providing a substrate; producing carbon plasma, superhard particle plasma and corrosion-resistant particle plasma by a sputtering method; and depositing a hybrid coating.

A method for forming a superhard amorphous carbon coating in vacuum, comprising the steps of: placing an article in a vacuum chamber, evacuating the chamber, treating a surface for the article with accelerated ions; applying, on the treated surface, a layer of a material that provides adhesion for subsequent layers, initiating pulsed electric-arc discharge on a graphite cathode, and obtaining a pulsed carbon plasma stream from a plurality of cathode spots that move along the cathode surface. After that, the carbon plasma is condensed in a predetermined area on the article surface to produce a superhard amorphous carbon coating, the article temperature being maintained within the range of 200 to 450 K through controlling a repetition frequency of the electric-arc discharge pulses. According to the invention, the carbon plasma pulsed stream has average ion energy of 25-35 eV and ion concentration of 10¹², 10¹³ cm⁻³; axis of the carbon plasma stream being set at angle of 15-45° to a predetermined surface of an article. During application of the coating, the article temperature change Δt is maintained within the range of 50-100 K.

The invention provides an enhanced cathodic arc source for arc plasma deposition. An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flowproduced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.

The invention relates to a device and method for depositing pure DLC (diamond-like carbon) by graphite cathode arc enhanced glow discharge. The invention aims to solve the problem that metal elementspollute DLC when the DLC is prepared by existing metal cathode arc enhanced glow discharge. A discharge path is constructed between a graphite cathode arc and an anode, carbon-containing gas is introduced into the discharge path, and the introduced carbon-containing gas is ionized by high-density electrons emitted by the graphite cathode arc and deposited on the surface of a workpiece to form thepure DLC. The proportion of ions to atoms in carbon-containing plasma can be controlled by changing a discharge mode between the cathode and the anode and adjusting discharge parameters. By the deviceand the method, the adverse effect of metal doping on tribological properties is avoided when the DLC is prepared by metal target enhanced glow discharge. The device and method are applied to the field of preparation of the DLC by plasma enhanced chemical vapor deposition.

The invention discloses a method for fabricating thin film circuits on a warped co-fired ceramic substrate in a polishing-free manner. The method comprises the following steps of 1), spraying the warped co-fired ceramic substrate with a BCB glue solution, and then performing solidification in a nitrogen atmosphere furnace according to a BCB solidification temperature curve; 2), spraying a solidified BCB medium layer with positive photoresist, exposing the positive photoresist over against a through hole column by using laser beams after pre-baking, performing development to remove the exposedpositive photoresist over against the through hole column, and performing post-baking on the photoresist; 3), etching a BCB medium by using oxygen/carbon tetrafluoride plasmas to expose the through hole column, and then removing a residual photoresist mask by using the oxygen plasmas or a photoresist removal solution; 4), based on the positive photoresist spraying and the laser beam photoetching,making a thin film circuit of a bottom layer; and 5), based on the positive photoresist spraying and the laser beam photoetching, making thin film circuits of subsequent layers.

The invention provides a passivation method of a semiconductor laser cavity surface and a semiconductor laser, belonging to the field of semiconductor lasers. By bombarding and injecting nitrogen plasma into the front and back cavity surfaces of semiconductor lasers, the hanging bonds on the cavity surface can be fully bonded to N atoms, which can not only passivate N atoms, but also cause the formation of Ga-N bond is more stable; By bombarding and implanting the front and back cavity surfaces with carbon plasma, C atoms are fully combined with the new broken bonds produced by nitrogen ion bombardment, which compensates the surface damage of the cavity surface and ensures the saturation and stability of the hanging bonds of the cleavage cavity surface. Therefore, the invention not only simplifies the process steps of cavity surface passivation, reduces the process flow time, reduces the production cost, but also improves the anti-optical catastrophe level of the semiconductor laser and the reliability of stable output under the condition of high optical power density, and realizes the purpose of high power and long service life of the semiconductor laser.

A manufacturing method for a head slider coated with Diamond-like Carbon (DLC) includes: providing a substrate that is to be finally made into a head slider; depositing a DLC layer on a surface of the substrate, with carbon plasma source being sputtered in a direction that is vertical to the surface of the substrate; and doping a fluorine-doping (F-doping) layer on the DLC layer. Whereby the head slider has good film adhesion performance, higher hardness, better wear resistance, lower surface energy to obtain good hydrophobicity and oleophobicity, and lower fly height in HDD.

The invention discloses an antibacterial and biocompatible bone implantation material and a preparation method and application thereof. The antibacterial and biocompatible bone implantation material comprises a bone implantation material body and a composite antibacterial layer formed on the surface of the bone implantation material body; the composite antibacterial layer is obtained by injectinga carbon-containing plasma or a silicon-containing plasma into a surface layer of the bone implantation material body to obtain a transition layer and then injecting a nitrogen-containing plasma or aphosphorus-containing plasma into the transition layer; the carbon-containing plasma, the silicon-containing plasma, the nitrogen-containing plasma and the phosphorus-containing plasma all do not contain hydrogen and oxygen; the relative surface potential of the antibacterial and biocompatible bone implantation material is 0.01-0.5 V. The antibacterial and biocompatible bone implantation materialand the preparation method and application thereof have the advantages that a plasma injection technology is adopted to construct the high potential surface, and the antibiosis and biosecurity are given to the surface of the bone implantation material.

The invention belongs to the preparation technology for growing metal carbide on metal surfaces and relates to a method for growing metal carbide on a metal surface. The method includes the preparation steps that firstly, tungsten, zirconium or a tungsten-zirconium alloy is sputtered onto the metal base body surface in a magnetron sputtering manner, and a compact thin film layer is formed; secondly, a metal base body is heated to 100-500 DEG C, and cooling is performed till room temperature is achieved after heat preserving is performed for 0.5-1 h; thirdly, carbon plasma is made to react witha thin film layer of the metal base body to generate tungsten carbide and/or zirconium carbide through a plasma chemical vapor deposition system. According to the method, a zirconium carbide or tungsten carbide or zirconium carbide and tungsten carbide composite layer can grow on the surface of a metal bar, plate or foil with the melting point larger than 500 DEG C, and the mechanical propertiesof the surface of the metal bar, plate or foil are improved and include strength, abrasion resistance, toughness and impacting strength.