5 results about "Carbon plasma" patented technology

Methods of depositing nanocrystal diamond films are described. The method can be used for manufacturing integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, and then treating the substrate with a plasma to form a nanocrystal diamond film. The resulting nanocrystal diamond film is formed on the oxide-rich amorphous interface layer between the nanocrystal diamond film and the silicon substrate.

The application provides a resource treatment method of waste palladium catalyst. The method first carries out microwave carbon removal, plasma etching and N-TiO2 light catalyst loading on the waste palladium catalyst to complete carrier loosening modification; then in a supercritical extraction kettle with an embedded ultraviolet LED lamp, a gradient strategy of 'weak complexing agent pre-washing impurity removal + strong complexing agent main palladium extraction' is adopted, combined with light catalysis-super critical synergistic effect to strengthen palladium desorption and selective extraction; then the impurity metal and weak complexing agent are recovered through reduced pressure condensation, and the palladium complex fluid is purified through a silica gel adsorption column; then the purified fluid is introduced into a loading kettle to mix with a carrier precursor suspension, hydrogen is introduced for in-situ reduction, and palladium nanoparticles are loaded, and a palladium-based catalyst applicable to industrial application is directly obtained through drying and calcination; finally, the waste carrier is microwave activated (active carbon carrier is additionally steam activated) to realize deep reuse.

Methods for producing layered nanocarbon structures placing a workpiece in a working chamber, applying a vacuum to the chamber, processing the workpiece surface with gas ions, applying a material sublayer to the workpiece surface, depositing carbon ions from a carbon plasma on the workpiece surface to apply an amorphous diamond-like sp3 carbon coating layer on the workpiece surface. The methods include irradiating the growing carbon coating with accelerated ions of an inert gas at a first energy range to apply a graphite sp2 carbon coating layer on the sp3 carbon coating layer and irradiating the growing carbon coating with accelerated ions of the inert gas at a second energy range, different from the first energy range, to apply a linear chain and polymer sp1 carbon coating layer on the sp2 carbon coating layer.

A method for depositing nanocrystalline diamond films is described. This method may be used in the manufacture of integrated circuits. The method includes treating a substrate with plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, and then treating the substrate with plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond film is formed on an oxide-rich amorphous layer at the interface between the nanocrystalline diamond film and the silicon substrate.

The application discloses a hollow tube DLC coating method by using a direct current magnetic control strong stretching arc, belongs to the technical field of surface coating, and aims at the problems of poor film uniformity, low adhesion, slow deposition rate and the like in the deposition of a DLC film on the inner wall of a hollow tube in the prior art. A low-pressure environment is established by using a vacuum cavity and a vacuum pump system, and a gas supply system is used to control a deposition atmosphere. A strong stretching arc source with a plurality of magnetic field coils is used to deposit a high-density DLC film on the inner wall of the hollow tube, so that the uniformity and adhesion of the DLC film are improved. Meanwhile, a bias voltage is applied to the hollow tube to enhance the adsorption capacity of carbon plasma on the surface of the substrate, improve the ion bombardment effect, make the DLC structure more dense, and significantly improve the adhesion between the coating and the substrate. The application is especially suitable for the inner wall area which is difficult to be coated. The application can effectively improve the uniformity, adhesion and deposition rate of the DLC coating, and is suitable for surface modification of hollow tube parts with high wear resistance and low friction requirement.