58 results about "Carbon plasma" patented technology

A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source / drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.

The invention relates to electronic engineering, in particular to producing autoemission cathodes which are used in the form of an electrode source for different-purpose electrovacuum devices. The use of different materials for producing cold cathodes is one of investigation directions with respect of the use of different materials, including a hydrocarbon material based on a linear-chaining sp1-carbon. Said hydrocarbon material can be embodied in the form of carbon fibres or carbon film based on a linear-chaining sp1-carbon, including films produced by applying a carbon-powder suspension to a substrate. Said substrate can be made of a flexible material. In addition, the cathode can be made of a carbon film obtainable by the deposition thereof from carbon plasma. The inventive method for producing carbon fibres consists in carrying out the reaction of dehydrohalogenation of polymeric fibres from polyvinylidene-halogenides or polyvinyl-halogenides associated with successive heat treatment at a temperature ranging from 400 to 900° C. in vacuum in the order of 104 Pa. The use of the inventive cold cathodes makes it possible to produce electronic devices and light sources.