10 results about "Carbon plasma" patented technology

Method comprising: Depositing a dummy gate (70, 76) over and along sidewalls of a fin (36, 56) extending upwardly from a semiconductor substrate (32, 50); Forming a first gate spacer (80) along a sidewall of the dummy gate (70, 76); plasma doping the first gate spacer (80) with carbon to form a carbon-doped gate spacer (80B); Forming a source / drain region (42, 44, 82, 84) adjacent to a channel region (108, 112) of the fin (36, 56); and Diffusing carbon from the carbon-doped gate spacer (80B) into a first region of the fin (36, 56) to provide a first carbon-doped region (106, 110), the first carbon-doped region (106, 110) being disposed between at least a portion of the source / drain region (42, 44, 82, 84) and the channel region (108, 112) of the fin (36, 56); wherein forming the source / drain region (42, 44, 82, 84) comprises etching a second portion of the rib (36, 56) to provide a recess (102, 104) adjacent to the first portion of the rib (36, 56), the method further comprising plasma doping the recess (102, 104) with carbon to form a second carbon-doped region (107, 111) along sidewalls and a bottom surface of the recess (102, 104).

Methods of depositing nanocrystal diamond films are described. The method can be used for manufacturing integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, and then treating the substrate with a plasma to form a nanocrystal diamond film. The resulting nanocrystal diamond film is formed on the oxide-rich amorphous interface layer between the nanocrystal diamond film and the silicon substrate.

The application provides a resource treatment method of waste palladium catalyst. The method first carries out microwave carbon removal, plasma etching and N-TiO2 light catalyst loading on the waste palladium catalyst to complete carrier loosening modification; then in a supercritical extraction kettle with an embedded ultraviolet LED lamp, a gradient strategy of 'weak complexing agent pre-washing impurity removal + strong complexing agent main palladium extraction' is adopted, combined with light catalysis-super critical synergistic effect to strengthen palladium desorption and selective extraction; then the impurity metal and weak complexing agent are recovered through reduced pressure condensation, and the palladium complex fluid is purified through a silica gel adsorption column; then the purified fluid is introduced into a loading kettle to mix with a carrier precursor suspension, hydrogen is introduced for in-situ reduction, and palladium nanoparticles are loaded, and a palladium-based catalyst applicable to industrial application is directly obtained through drying and calcination; finally, the waste carrier is microwave activated (active carbon carrier is additionally steam activated) to realize deep reuse.

Methods for producing layered nanocarbon structures placing a workpiece in a working chamber, applying a vacuum to the chamber, processing the workpiece surface with gas ions, applying a material sublayer to the workpiece surface, depositing carbon ions from a carbon plasma on the workpiece surface to apply an amorphous diamond-like sp3 carbon coating layer on the workpiece surface. The methods include irradiating the growing carbon coating with accelerated ions of an inert gas at a first energy range to apply a graphite sp2 carbon coating layer on the sp3 carbon coating layer and irradiating the growing carbon coating with accelerated ions of the inert gas at a second energy range, different from the first energy range, to apply a linear chain and polymer sp1 carbon coating layer on the sp2 carbon coating layer.

A method for depositing nanocrystalline diamond films is described. This method may be used in the manufacture of integrated circuits. The method includes treating a substrate with plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, and then treating the substrate with plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond film is formed on an oxide-rich amorphous layer at the interface between the nanocrystalline diamond film and the silicon substrate.

The application discloses a hollow tube DLC coating method by using a direct current magnetic control strong stretching arc, belongs to the technical field of surface coating, and aims at the problems of poor film uniformity, low adhesion, slow deposition rate and the like in the deposition of a DLC film on the inner wall of a hollow tube in the prior art. A low-pressure environment is established by using a vacuum cavity and a vacuum pump system, and a gas supply system is used to control a deposition atmosphere. A strong stretching arc source with a plurality of magnetic field coils is used to deposit a high-density DLC film on the inner wall of the hollow tube, so that the uniformity and adhesion of the DLC film are improved. Meanwhile, a bias voltage is applied to the hollow tube to enhance the adsorption capacity of carbon plasma on the surface of the substrate, improve the ion bombardment effect, make the DLC structure more dense, and significantly improve the adhesion between the coating and the substrate. The application is especially suitable for the inner wall area which is difficult to be coated. The application can effectively improve the uniformity, adhesion and deposition rate of the DLC coating, and is suitable for surface modification of hollow tube parts with high wear resistance and low friction requirement.

The invention discloses a method for preparing an amorphous carbon film on a rubber surface, an amorphous carbon film material and application. The method comprises the following steps: performing inert ion beam etching treatment on a rubber matrix; a plasma treatment method is adopted, graphite target glow discharge is conducted to generate carbon plasma, the carbon plasma acts on the surface of the rubber matrix subjected to inert ion beam etching treatment, and a carbon plasma modified layer of a net structure is formed; and continuously carrying out glow discharge on the graphite target to generate carbon plasma, continuously acting on the surface of the rubber matrix with the carbon plasma modified layer, and depositing to form a compact amorphous carbon film. According to the method disclosed by the invention, the surface of the rubber is subjected to continuous bombardment treatment by utilizing plasmas, so that in-situ transformation from an organic polymer carbonaceous structure to an amorphous carbonaceous structure on the surface or subsurface of the rubber is realized, and reliable combination of an amorphous carbon film on the surface of the rubber is realized; the problem that in the prior art, a hard film prepared on the surface of a flexible material is poor in film-substrate binding force is solved, and the service life of rubber in a friction environment is prolonged.

The invention relates to the technical field of carbon coating heating tubes, and discloses a carbon coating heating tube and a preparation method thereof, and the carbon coating heating tube comprises a quartz tube, two ends of the quartz tube are respectively provided with a tube head part used for electrode installation, and the inner wall of the quartz tube is coated with a conductive carbon paste coating; the end substrate is arranged on the inner wall of the pipe head, and the end substrate comprises a basic heat insulation layer and a pressure release layer; the basic heat insulation layer is formed by coating the head part of the pipe with an aerogel layer; a pressure release layer and an insulating plug are arranged outside the aerogel layer, an electrode is installed outside the insulating plug, and a molybdenum wire is arranged inside the insulating plug; the insulating plug is installed on the pipe head to seal the pipe head. The tube heads at the two ends of the quartz tube are coated with the aerogel layers for heat insulation, and meanwhile, the aerogel layers are externally provided with the pressure release layers formed by winding the ceramic fibers; when high pressure is generated in the quartz tube, the high pressure in the quartz tube can be released through the pressure release cavity.

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

The present invention discloses a conductive slurry for coating and a preparation method thereof, the method comprising: step 1, weighing each raw material; step 2, mixing graphene material and conductive carbon black, adding a first dispersant, and stirring evenly; step 3, heating water, adding a second dispersant, stirring evenly, adding the mixture to an aqueous solution, and stirring and mixing evenly; step 4, adjusting the pH value of the mixed solution to neutrality with a regulator; step 5, adding an adhesive to the mixed solution, continuing to stir evenly, and obtaining a mixed slurry; step 6, adjusting the viscosity of the mixed slurry with a thickener; step 7, coating the slurry on a cloth and drying it; step 8, testing the conductivity of the coated cloth and the wear-resistant effect of the conductive coating. The present invention also provides a conductive slurry for coating prepared by the method. The present invention prepares a conductive carbon slurry for coating process, the coating has strong fastness, is not easy to fall off, has good conductive effect, and can meet the corresponding conductive requirements.