Etching device using extreme-edge gas pipeline

Abstract

The invention provides an etching device which comprises a gas supply system and an etching reaction chamber. The etching reaction chamber comprises a gas sprayer which is connected with a double-gas pipeline device and an extreme-edge gas pipeline device. The gas supply system comprises the double-gas pipeline device and the extreme-edge gas pipeline device, wherein the double-gas pipeline device is used for supplying gas for the center part and the edge part of an etched wafer, and the extreme-edge gas pipeline device is used for supplying etching reaction gas for the extreme-edge of the etched wafer. In the etching process, through changes of gas ingredients and gas flow amount at the extreme-edge position of the wafer, etching evenness of the surface of the wafer is improved, and meanwhile the etching speed is delicately controlled.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an etching device using an extreme edge gas pipeline. Background technique [0002] With the wide application of electronic equipment, the manufacturing process of semiconductors has been developed rapidly. The semiconductor manufacturing process involves two basic etching processes: dry etching and wet etching. Among them, dry etching is to expose the wafer to the plasma generated by the etching gas, and the plasma reacts physically and chemically with the wafer, thereby selectively removing unnecessary materials from the wafer surface. At present, dry etching, which can make circuit patterns finer, is more and more widely used. As the process size of integrated circuits develops toward a finer structure, higher technical requirements are put forward for the processing technology. However, when the wafer size that can be processed in the industry develops from 12 in...

AI Technical Summary

Problems solved by technology

The lower part of the etching device 101 has a suction device vacuum pump 108. Generally, the gas in the edge area of ​​the wafer is drawn away earlier than the gas in the central area, and the bottom view of the traditional gas shower head 105 is as follows: figure 2 As shown, it is generally flat and full of circular gas injection holes 120, which all cause the etching environment at the edge of the wafer to be very different from the center of the wafer, and it is difficult to finely adjust the etching environment at the extreme edge of the wafer.

[0004] Due to the uneven distribution of gas in the center area and the edge area of ​​the wafer during the etching process, there are differences in the etching environment, etc., there is a load effect from the center to the edge, so that the center area of ​​the wafer and the edge of the wafer The etching rate of the area is different, resulting in uneven etching of the wafer surface, resulting in uneven size of through holes or other devices formed between the edge area and the central area of ​​the wafer, especially at the extreme edge of the wafer, reducing the semiconductor device yield

During the processing of 12-inch wafers, the uniformity of the wafer edge has been difficult to control well, and for 18-inch wafers, the uniformity problem is even more serious

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