Equipment and method for etching silicon nitride thin film

A silicon nitride film and etching technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of limited improvement and uneven etching, and achieve the promotion of dissolution rate, improvement of mixing uniformity, and improvement of etching The effect of uniformity

Inactive Publication Date: 2004-11-24
MACRONIX INT CO LTD
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has a limited degree of improvement in the uniformity of mixing between phosphoric acid solution and water, so it still cannot effectively solve the problem of uneven etching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Equipment and method for etching silicon nitride thin film
  • Equipment and method for etching silicon nitride thin film
  • Equipment and method for etching silicon nitride thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Please refer to figure 1 , which is a schematic diagram of an apparatus for etching a silicon nitride film according to a preferred embodiment of the present invention. This equipment is composed of a phosphoric acid tank 100 , a water adding unit 102 , a pipe fitting 112 , a heating device 104 , an acoustic wave generator 108 and a baffle 106 .

[0027] Wherein, the phosphoric acid tank 100 is filled with a concentrated phosphoric acid solution, such as a commercially available phosphoric acid solution with a concentration of 86%. The phosphoric acid tank 100 and the water adding unit 102 are communicated through a pipe fitting 112, and the water adding unit 102 is connected to a pressurizing device 110, and one end of the pipe fitting 112 is connected to the bottom of the phosphoric acid tank 100, so that the water adding unit 102 can be regularly A certain amount of water is injected from the bottom of the phosphoric acid tank 100 .

[0028] In a preferred embodime...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to an equipment for etching silicon nitride film and its method. Firstly, a phosphoric acid tank is provided, and an ultrasonic wave generator is mounted on the side wall of the phosphoric acid tank, then a wafer a silicon nitride film is formed on the wafer therein, and the ultrasonic wave generator can be started so as to etch or remove the silicon nitride film on the wafer.

Description

technical field [0001] The present invention relates to an etching device and method, in particular to a device and method for etching a silicon nitride film. Background technique [0002] In the semiconductor process, the etching process is used to remove the film not covered by the photoresist layer or mask layer by chemical reaction or physical action, so as to complete the transfer of the pattern on the photomask to the film. Purpose. These etched thin films will become part of semiconductor components. In addition, in the semiconductor process, the method of removing the entire thin film is also often completed by an etching process. Currently, the etching technology used in the semiconductor process is mainly divided into wet etching and dry etching. The wet etching mainly uses chemical reaction to etch the thin film. [0003] Usually silicon nitride film is an insulating material that is etched or removed by wet etching. At present, most etching methods for silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/24H01L21/311H01L21/318
Inventor 张庆裕
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap