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Non-complete planar spray header applied to semiconductor plasma processing device

A plasma and processing device technology, which is applied in semiconductor manufacturing and application fields, can solve the problems of low gas utilization rate and insufficient uniformity, and achieve the effects of improving utilization rate, scientific and reasonable structure, and improving uniformity

Inactive Publication Date: 2015-07-01
PIOTECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention is proposed in view of improving the uniformity of plasma treatment, and its purpose is to provide a shower head that can realize the uniformity of plasma treatment higher than that of the traditional technology, mainly to solve the problem of insufficient uniformity of the existing technology and the problem of gas utilization. Low rate of technical issues

Method used

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  • Non-complete planar spray header applied to semiconductor plasma processing device
  • Non-complete planar spray header applied to semiconductor plasma processing device

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Embodiment

[0020] refer to figure 1 , a non-complete planar shower head applied to a semiconductor plasma processing device, the shower head forms an opposite surface with the object stage, and the lower surface of the shower head has a non-complete planar structure. The above-mentioned shower head is provided with an opening area, and the opening area is provided with a plurality of through holes, which are used to spray the reaction gas into the reaction chamber in a spray-like manner, and a voltage is applied between the shower head and the stage to form plasma, which can Plasma treatment is performed on the objects loaded on the stage.

[0021] These through holes are distributed according to a certain rule, which may be uniform or non-uniform distribution, and the uniform distribution is adopted in this embodiment.

[0022] Specific structure: it includes the main body of the shower head 2, the edge of the main body of the shower head 2 is provided with a boss 3; the concave part o...

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Abstract

A non-complete planar spray header applied to a semiconductor plasma processing device mainly solves the technical problems that, in the prior art, the homogeneity is not good and the gas utilization rate is low. The spray header and an object stage are arranged at opposite positions in a reaction chamber; chambering processing is performed on a lower surface of the spray header to form into a non-complete planar structure; the chamfering angle alpha is between 1 to 89 degrees; the non-planar structure area on the lower surface of the spray header occupies 1% to 100% of the lower area of the spray header. According to the non-complete planar spray header applied to the semiconductor plasma processing device, uniform processing of a semiconductor plasma processing process can be achieved through a non-complete planar structure on the lower surface of the spray header, the gas utilization rate can be simply and effectively improved, and the spray header can be widely applied to the technical field of semiconductor manufacturing.

Description

technical field [0001] The invention relates to an incomplete planar shower head applied to a semiconductor plasma processing device, and belongs to the technical field of semiconductor manufacturing and application. Background technique [0002] Most of the existing plasma processing devices perform plasma processing on the stage and the loaded objects by forming plasma in the reaction chamber. Usually, a shower head with a flat surface is used as the upper plate and a stage with a flat surface is used as the lower electrode. The process gas is supplied from the shower head in the form of a spray, and the gas is uniformly exhausted from around the stage. After the voltage device is stabilized, a voltage is applied between the upper and lower plates to form plasma for plasma treatment. [0003] In the above process, relatively speaking, the direction of gas transportation is from the center of the stage to the periphery, which may easily cause uneven distribution of gas in ...

Claims

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Application Information

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IPC IPC(8): H01J37/32
CPCH01J37/3244
Inventor 于棚刘忆军
Owner PIOTECH CO LTD
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