Spraying head capable of improving semiconductor plasma processing evenness

A technology for processing uniformity and plasma, which is applied in semiconductor/solid-state device manufacturing, injection devices, injection devices, etc., can solve the problems of low gas utilization rate and insufficient uniformity, and achieve the goal of increasing utilization rate and improving uniformity Effect

Inactive Publication Date: 2015-07-22
PIOTECH CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is proposed in view of improving the utilization rate of gas and improving the uniformity of p...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spraying head capable of improving semiconductor plasma processing evenness
  • Spraying head capable of improving semiconductor plasma processing evenness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The shower head of the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. In this paper, the formation of plasma by radio frequency ionization is taken as an example to describe the shower head of the present invention. It should be noted that all the drawings used in the embodiments are simplified diagrams to facilitate the explanation of the embodiments.

[0018] The shower head of the present invention forms an opposite surface with the loading platform, and is arranged in the reaction chamber, and the area of ​​the opening of the shower head is smaller than the area of ​​the loaded objects. The opening area of ​​the shower head is provided with a plurality of through holes for spraying the reaction gas into the reaction chamber in the form of a shower. These through-holes are distr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a spraying head capable of improving the semiconductor plasma processing evenness. The technical problems that in the prior art, the evenness is not good enough, and the gas use ratio is low are mainly solved. The spraying head is structurally characterized in that a spraying head body and a carrying table are located at the opposite positions in a reaction cavity, opposite faces are formed on the spraying head body and the carrying table, and gas supplying is carried out on the carrying table from the spraying head body in a sprayed mode. A plurality of through holes are formed in a spraying hole forming region of the spraying head body, and the area of the hole forming region of the spraying head body is smaller than that of an object carried by the carrying able. Opposite electrodes are formed on the spraying head body and the carrying table, voltage is applied to the portion between the spraying head body and the carrying table to form plasmas, and plasma processing can be carried out on the carrying table and the carried object. Even processing in the semiconductor plasma processing technology procedure can be achieved by controlling the area of the through holes formed in the spraying head body. By means of the spraying head, the gas utilization ratio can be simply and effectively increased, and the evenness of plasma processing can be improved. The spraying head can be widely applied to the technical field of semiconductor manufacturing.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a shower head capable of improving the uniformity of semiconductor plasma treatment. Background technique [0002] Most of the existing plasma processing devices perform plasma processing on the stage and the loaded objects by forming plasma in the reaction chamber. Usually, the shower head is used as the upper plate and the carrier as the lower electrode. There are many through holes distributed on the shower head, and the process gas is supplied to the carrier from the through holes of the shower head in a spray shape. Exhaust uniformly from the surroundings of the stage, and after the voltage is stabilized by the voltage control device, a voltage is applied between the upper and lower plates to form plasma for plasma treatment. [0003] In the above process, the gas transportation direction is from the center of the stage to the periphery, which may easily...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B05B1/14H01J37/32H01L21/67
Inventor 于棚刘忆军
Owner PIOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap