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1630results about "X-ray tube with very high current" patented technology
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Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
ActiveUS7566891B2Reduce light lossRadiation pyrometryPretreated surfacesProcess regionUltraviolet radiation
Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
Owner:APPLIED MATERIALS INC
Method for supplying gas with flow rate gradient over substrate
ActiveUS8664627B1Reduce gradientIncrease concentrationMaterial analysis by optical meansPipeline systemsReaction chamberChemistry
A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.
Owner:ASM IP HLDG BV
UV light irradiating apparatus with liquid filter
ActiveUS7763869B2High mechanical strengthHigh energyMirrorsOptical filtersLiquid layerLight irradiation
A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.
Owner:ASM JAPAN
Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
ActiveUS7692171B2Reduce light lossNanoinformaticsSemiconductor/solid-state device manufacturingProcess regionUltraviolet radiation
Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.
Owner:APPLIED MATERIALS INC
Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
ActiveUS7196342B2Prevented from reachingRadiation pyrometryLaser using scattering effectsSputteringHydrogen
Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV meteorology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
Owner:ASML NETHERLANDS BV
Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system
InactiveUS20050263719A1High dielectric constantReduce transmission intensityFurnace componentsLiving organism packagingUltravioletNitrogen gas
The present invention relates to an ultraviolet ray generator 101, and the generator 101 has an ultraviolet ray lamp 1, a protective tube 2 being made of a material which is transparent with respect to ultraviolet ray and housing the ultraviolet ray lamp 1, and gas introduction port 6a introducing nitrogen gas or inert gas into the protective tube 2.
Owner:NAT INST OF ADVANCED IND SCI & TECH +1
Laser-Driven Light Source
ActiveUS20070228300A1Minimize coolingAvoid low lightRadiation pyrometryNanoinformaticsProduct gasBrightness perception
An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.
Owner:HAMAMATSU PHOTONICS KK
Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays
InactiveUS20020168049A1Avoid reflectionsReduce reflectionRadiation/particle handlingNanoinformaticsSoft x rayUltraviolet radiation
An EUV photon source includes a plasma chamber filled with a gas mixture, multiple electrodes within the plasma chamber defining a plasma region and a central axis, a power supply circuit connected to the electrodes for delivering a main pulse to the electrodes for energizing the plasma around the central axis to produce an EUV beam output along the central axis, and a preionizer for ionizing the gas mixture in preparing to form a dense plasma around the central axis upon application of the main pulse from the power supply circuit to the electrodes. The EUV source preferably includes an ionizing unit and precipitator for collecting contaminant particulates from the output beam path. A set of baffles may be disposed along the beam path outside of the pinch region to diffuse gaseous and contaminant particulate flow emanating from the pinch region and to absorb or reflect acoustic waves emanating from the pinch region away from the pinch region. A clipping aperture, preferably formed of ceramic and / or Al2O3, for at least partially defining an acceptance angle of the EUV beam. The power supply circuit may generates the main pulse and a relatively low energy prepulse for homogenizing the preionized plasma prior to the main pulse. A multi-layer EUV mirror is preferably disposed opposite a beam output side of the pinch region for reflecting radiation along the central axis for output along the beam path of the EUV beam. The EUV mirror preferably has a curved contour for substantially collimating or focusing the reflected radiation. In particular, the EUV mirror may preferably have a hyperbolic contour.
Owner:USHIO DENKI KK
Laser produced plasma EUV light source with pre-pulse
A method for generating EUV light is disclosed which may include the acts / steps of providing a source material; generating a plurality of source material droplets; simultaneously irradiating a plurality of source material droplets with a first light pulse to create irradiated source material; and thereafter exposing the irradiated source material to a second light pulse to generate EUV light, e.g. by generating a plasma of the source material. In another aspect, an EUV light source may include a droplet generator delivering a plurality of source material droplets to a target volume; a source of a first light pulse for simultaneously irradiating a plurality of droplets in the target volume to produce an irradiated source material; and a source of a second light pulse for exposing the irradiated source material to generate EUV light. The droplet generator may comprise a non-modulating droplet generator and may comprise a multi-orifice nozzle.
Owner:CYMER INC
Cleaning tools with UV flash unit
A combination tool for cleaning and sanitizing a surface is disclosed. The tool includes a cleaning device and at least one UV flash unit. The cleaning device can be adapted for either wet or dry cleaning. The combination tool can also include a dispensing unit that can dispense a treatment agent. The tool can also include a sensor that can detect surface properties. In some arrangements, the tool includes a motive component that can propel the tool robotically.
Owner:THE CLOROX CO
EUV light source
ActiveUS20050199829A1Sufficient sizeSufficient thermal massNanoinformaticsRadioactive sourcesControl systemDisplacement control
An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.
Owner:ASML NETHERLANDS BV
Laser plasma source for extreme ultraviolet lithography using a water droplet target
InactiveUS6377651B1Avoid componentsEasy to operateNanoinformaticsPhotomechanical exposure apparatusAuxiliary electrodeExtreme ultraviolet
A laser produced extreme ultraviolet (EUV) source based on a water droplet target has been implemented an auxiliary electrode system between the source and the first collector mirror. The auxiliary electrode system creates a repeller electric field, possibly a dc voltage imposed on the mirror that slows down and reverses the trajectories of ions from the source before they impact the collection mirror. The source modified according to the invention was evaluated with respect to the demands of EUV lithography and found to have much extended operational lifetimes. The spectral distribution of the generated radiation as well as the conversion efficiency into line radiation at 13 nm was determined. Long time measurements of the reflectivity of silicon / molybdenum multilayer mirrors for up to from 107 to 109 shots show the useful influence of the treatment of ions emitted from the source. Several methods of debris reduction were tested and discussed. Surface analysis of the treated multilayer mirrors of is presented. Long time measurements of the reflectivity of silicon / molybdenum multilayer mirrors for up to 109 shots show the advantage provided by this invention.
Owner:UNIV OF CENT FLORIDA RES FOUND INC
EUV light source
A laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprises a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, and a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site.
Owner:ASML NETHERLANDS BV
Extreme ultraviolet light source
InactiveUS6972421B2Improve efficiencyImprove performanceNanoinformaticsSemiconductor/solid-state device manufacturingAtomic elementLight energy
The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.
Owner:ASML NETHERLANDS BV
High repetition rate laser produced plasma EUV light source
Owner:ASML NETHERLANDS BV
Large-area individually addressable multi-beam x-ray system and method of forming same
A structure to generate x-rays has a plurality of stationary and individually electrically addressable field emissive electron sources with a substrate composed of a field emissive material, such as carbon nanotubes. Electrically switching the field emissive electron sources at a predetermined frequency field emits electrons in a programmable sequence toward an incidence point on a target. The generated x-rays correspond in frequency and in position to that of the field emissive electron source. The large-area target and array or matrix of emitters can image objects from different positions and / or angles without moving the object or the structure and can produce a three dimensional image. The x-ray system is suitable for a variety of applications including industrial inspection / quality control, analytical instrumentation, security systems such as airport security inspection systems, and medical imaging, such as computed tomography.
Owner:THE UNIV OF NORTH CAROLINA AT CHAPEL HILL
Extreme ultraviolet light source apparatus
ActiveUS20100181503A1Improve efficiencyDamage to coatingRadiation pyrometryPhotomechanical apparatusExtreme ultravioletIonization
In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
Owner:GIGAPHOTON
Field emitter based electron source with minimized beam emittance growth
InactiveUS7801277B2Low voltage extractionMinimal emittance growthCathode ray concentrating/focusing/directingElectrode and associated part arrangementsEmissivityElectron source
A system and method for limiting emittance growth in an electron beam is disclosed. The system includes an emitter element configured to generate an electron beam and an extraction electrode positioned adjacent to the emitter element to extract the electron beam out therefrom, the extraction electrode including an opening therethrough. The system also includes a meshed grid disposed in the opening of the extraction electrode to enhance intensity and uniformity of an electric field at a surface of the emitter element and an emittance compensation electrode (ECE) positioned adjacent to the meshed grid on the side of the meshed grid opposite that of the emitter element and configured to control emittance growth of the electron beam.
Owner:GENERAL ELECTRIC CO
LPP EUV light source
An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.
Owner:ASML NETHERLANDS BV
Laser produced plasma EUV light source
ActiveUS20060219957A1Increase the rate of chemical reactionsRadiation pyrometryNanoinformaticsLine tubingLight beam
An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.
Owner:ASML NETHERLANDS BV
Extreme ultraviolet light source device, laser light source device for extreme ultraviolet light source device, and method of adjusting laser light source device for extreme ultraviolet light source device
ActiveUS20100078577A1Radiation pyrometryMaterial analysis by optical meansOptoelectronicsLaser light
An EUV light source device properly compensates the wave front of laser beam which is changed by heat. A wave front compensator and a sensor are provided in an amplification system which amplifies laser beam. The sensor detects and outputs changes in the angle (direction) of laser beam and the curvature of the wave front thereof. A wave front compensation controller outputs a signal to the wave front compensator based on the measurement results from the sensor. The wave front compensator corrects the wave front of the laser beam to a predetermined wave front according to an instruction from the wave front compensation controller.
Owner:GIGAPHOTON
Metrology Methods, Metrology Apparatus and Device Manufacturing Method
ActiveUS20170184981A1Precise structureIncrease the angle of incidenceOptically investigating flaws/contaminationPhotomechanical exposure apparatusAction spectrumMetrology
Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1 / DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2 / DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD / OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and / or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).
Owner:ASML NETHERLANDS BV
Lithographic projection apparatus and particle barrier for use therein
ActiveUS6838684B2Reduce in quantityReduce the amount requiredRadiation pyrometrySemiconductor/solid-state device manufacturingLithographic artistOptical axis
A lithographic projection apparatus for EUV lithography includes a foil trap. The foil trap forms an open structure after the EUV source to let the EUV radiation pass unhindered. The foil trap is configured to be rotatable around an optical axis. By rotating the foil trap, an impulse transverse to the direction of propagation of the EUV radiation can be transferred on debris present in the EUV beam. This debris will not pass the foil trap. In this way, the amount of debris on the optical components downstream of the foil trap is reduced.
Owner:ASML NETHERLANDS BV
Collector for EUV light source
InactiveUS20060131515A1Increase probabilityReduce probabilityLaser detailsNanoinformaticsSputteringHigh probability
A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and / or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.
Owner:ASML NETHERLANDS BV
Method and apparatus for controlling electron beam current
InactiveUS7085351B2High emitted electron current densityHigh electron beam currentStatic indicating devicesNanoinformaticsHigh energyX-ray
An x-ray generating device includes a field emission cathode formed at least partially from a nanostructure-containing material having an emitted electron current density of at least 4 A / cm2. High energy conversion efficiency and compact design are achieved due to easy focusing of cold cathode emitted electrons and dramatic reduction of heating at the anode. In addition, by pulsing the field between the cathode and the gate or anode and focusing the electron beams at different anode materials, pulsed x-ray radiation with varying energy can be generated from a single device. Methods and apparatus for independent control of electron emission current and x-ray energy in x-ray tubes are also provided. The independent control can be accomplished by adjusting the distance between the cathode and anode. The independent control can also be accomplished by adjusting the temperature of the cathode. The independent control can also be accomplished by optical excitation of the cathode. The cathode can include field emissive materials such as carbon nanotubes.
Owner:THE UNIV OF NORTH CAROLINA AT CHAPEL HILL
Method and apparatus for EUV plasma source target delivery
An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and / or a wetting barrier around the periphery of the output orifice.
Owner:ASML NETHERLANDS BV
High repetition rate laser produced plasma EUV light source
An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
Owner:ASML NETHERLANDS BV
Alternative fuels for EUV light source
An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and / or Indium.
Owner:ASML NETHERLANDS BV
Sanitizer for portable electronic devices
InactiveUS8481970B2Radiation pyrometryMaterial analysis using wave/particle radiationUltraviolet radiationUltraviolet
A sanitizer for sanitizing a portable electronic device is provided, the sanitizer having a base including a cavity for receiving the electronic device, at least one ultraviolet radiation source for emitting ultraviolet radiation into the cavity, a cover cooperating with the base, the cover moving between an open position wherein the electronic device can be inserted into or removed from the cavity and a closed position wherein the cavity is enclosed so as to substantially maintain the ultraviolet radiation within the cavity, and a controller for enabling the ultraviolet radiation source to be activated only when the cover is closed.
Owner:SPECTRONICS
Infrared radiation sources, sensors and source combinations, and methods of manufacture
InactiveUS7119337B1Efficient thermal massDissipate quicklyPhotometrySensing radiation from gases/flamesBlack-body radiationElectrical control
A blackbody radiation device (110) includes a planar filament emission element (102) and a planar detector (104) for respectively producing and detecting radiation having width dl / 1 less than about 0.1 to test a sample gas, where 1 is the wavelength of the radiation; a reflector (108); a window (W); an electrical control (118); and a data output element (116).
Owner:FLIR SURVEILLANCE
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