126 results about "Plasma irradiation" patented technology

To provide a resist underlayer film formation method capable of forming a resist underlayer film exhibiting excellent dry etching resistance.SOLUTION: A resist underlayer film formation method for forming a resist under layer film on a substrate includes a step (i) of coating a composition for resist underlayer film formation containing a polymer (A) and an organic solvent onto the substrate and obtaining a coating film, and subjecting the coating film to heat treatment at a temperature of 100°C or higher and 800°C or lower from 10 seconds to 7,200 seconds and curing the coating film, to form an underlayer film precursor film, and a step (ii) of curing the underlayer film precursor film by plasma irradiation, to form a resist underlayer film, wherein as the polymer (A), an aromatic ring-containing resin containing no hydroxyl group and organic group represented by the following general formula (1) in a repeating unit constituting the polymer is used.SELECTED DRAWING: Figure 1

To provide a method for manufacturing a composite body that can join cross sections to which bubbles of a resin foam are exposed with sufficient strength, and a foamed body joined product.SOLUTION: There is provided a method for manufacturing a composite body. A method for manufacturing a composite body 100 includes: a first treatment step S10 of subjecting an exposure surface 11a of a first member 10 that is a foamed body having an exposure surface to which bubbles are exposed to plasma irradiation, and forming a first treatment surface 11b, and a joint step S40 of joining the first treatment surface 11b to a second member 20 through a resin layer 30b.SELECTED DRAWING: Figure 1

The invention provides an electrolyzed water catalyst as well as a preparation method and application thereof. The electrolyzed water catalyst comprises graphene, MxSy and platinum group metal single atoms, and the preparation method comprises the following steps: firstly, carrying out hydrothermal reaction on raw materials of graphene and MxSy to obtain a first intermediate catalyst; and then coating a second solution containing the first intermediate catalyst on the surface of a substrate, performing plasma irradiation, and then treating by adopting a magnetron sputtering method and / or a chemical vapor deposition method to obtain the electrolyzed water catalyst. According to the invention, an MxSy composite structure is constructed on a graphene substrate, and plasma surface modification is supplemented, so that an environment rich in active defect sites is created; according to the present invention, the platinum group metal single atom can be accurately anchored through the magnetron sputtering method and / or the chemical vapor deposition method, such that the platinum group metal loading capacity is significantly reduced so as to reduce the cost, and the intrinsic activity and the stability of the water electrolysis catalyst are improved.

The invention relates to the field of concrete, and particularly discloses waste fiber concrete for water net engineering, which is prepared from the following ingredients in parts by weight: 40 to 60 parts of cement, 130 to 200 parts of aggregate, 15 to 25 parts of mineral materials, 0.3 to 1 part of polyolefin reinforcing agents, 0.1 to 1.2 parts of dispersing agents and 3 to 10 parts of modified waste fibers, and the water-binder ratio is smaller than or equal to 0.4. The modified waste fibers are prepared by the following steps: cleaning waste fibers, dipping the cleaned waste fibers in a silane coupling agent solution, carrying out heating reaction, then adding a plasticizer, and carrying out plasma irradiation. By controlling the use amount of the cement, the aggregate, the mineral material and other raw material components and controlling the water-binder ratio, the compactness of the concrete material is high, and the waste fibers are modified and then utilized, so that the finally prepared concrete has higher compression resistance and tensile property, meanwhile, the waste treatment pressure is reduced, the carbon emission is reduced, and the environment-friendly and energy-saving effects are achieved. The environment friendliness is improved.

The present invention is a method for forming a resist underlayer film on a substrate, the method including the steps of: (i) forming an underlayer-film-precursor film by coating a substrate with a composition for forming a resist underlayer film, containing (A) a polymer and an organic solvent, to obtain a coating film and subjecting the coating film to heat treatment at a temperature of 100° C. or higher and 800° C. or lower for 10 seconds to 7,200 seconds to cure the coating film; and (ii) forming a resist underlayer film by curing the underlayer-film-precursor film by plasma irradiation, where the polymer (A) is an aromatic ring-containing resin containing no hydroxy groups or organic groups represented by the following general formulae (1) in a repeating unit contained in the polymer, where “p” represents 0 or 1, and “*” represents an attachment point. This can provide a method for forming a resist underlayer film according to which it is possible to form a resist underlayer film that exhibits excellent dry etching resistance.

The application belongs to the technical field of flame retardant materials, and particularly relates to a low-ion-precipitation type halogen-free flame retardant for electronic products and a preparation method thereof. The method uses a phosphorus-nitrogen type halogen-free flame retardant as raw material, first generates active sites on the surface of the flame retardant powder through low-temperature plasma irradiation, then generates a silane coupling agent containing a crown ether group in situ in anhydrous ethanol by pre-reaction of the silane coupling agent and a hydroxymethyl crown ether, adds deionized water to start hydrolysis and polycondensation, forms a crown ether functionalized polysiloxane crosslinking layer in situ on the surface of the particles, and finally drives the free sodium and potassium ions in the particles to diffuse outward and be selectively complexed, captured and fixed by the crown ether layer under the condition of ultrasonic-assisted warm water immersion washing. The application solves the problem of the deterioration of the electrical properties of a polymer insulating material in a humid heat environment caused by residual ion impurities of the flame retardant.

The invention discloses a method for preparing ceramsite from hazardous waste zinc-nickel-containing sludge and kyanite flotation tailings and a product thereof, and the method comprises the following steps: uniformly mixing fine-grain zinc-nickel-containing sludge, kyanite flotation tailings and palygorskite mineral powder, grinding at a high speed, mixing and stirring with water, and performing low-temperature plasma irradiation treatment to obtain the ceramsite. After the reaction is finished, granulating and drying to obtain raw material balls; sintering under an air atmosphere condition, and cooling to obtain the ceramsite. According to the method, a method of combining high-speed grinding, low-temperature plasma irradiation and sintering is adopted, collaborative recycling and harmless treatment of hazardous waste zinc-nickel-containing sludge and common solid waste kyanite flotation tailings are achieved, and the obtained ceramsite has no dangerous characteristic and has high strength. The method not only eliminates environmental risks of hazardous waste heavy metal sludge and common solid waste kyanite flotation tailings, but also converts the hazardous waste heavy metal sludge and the common solid waste kyanite flotation tailings into available building materials, and has environmental and economic dual benefits.

A crosslinkable elastomer composition including a crosslinkable elastomer and a surface-oxidized non-oxide ceramic. Also disclosed is a fluoroelastomer molded article having a weight reduction percentage of 2.5% by mass or less and an amount of particles generated of 0.05% by mass or less after O2 plasma irradiation, a weight reduction percentage of 1.8% by mass or less, an amount of particles generated of 0.05% by mass or less after NF3 plasma irradiation, and a compression set of 50% or less after aging at 300° C. for 70 hours.

The present invention provides an apparatus for preparing nanopowders by plasma irradiation, comprising a furnace body, a powder collecting device, a vaporizing device, and a wire feeding device. The vaporizing device is disposed on the furnace body and above the crucible. The powder collecting device is disposed at the rear of the furnace body via a pipeline. The wire feeding device is disposed outside the furnace body and feeds a base material welding wire into the furnace body. The vaporizing device comprises at least two plasma guns, each connected to a negative electrode and a positive electrode, generating a high-temperature arc between the plasma guns and the crucible. The plasma guns are each provided with a handwheel for adjusting the upward and downward movement of the plasma guns. The base material welding wire is vaporized by the high-temperature arc. The vaporized base material is then blown through the vaporizing device and a horizontal air blowing assembly above the crucible opening to the powder collecting device for collection. The apparatus of the present invention has an ingenious structural design, with each device or component interconnected to ensure the vacuum degree of the equipment during production and processing, reduce the contact between the raw materials and air or oxygen, ensure the production quality of the nanopowder, and facilitate continuous and uninterrupted production.

The present invention provides an optical plasma module, a clothes treating machine, a clothes treating machine with a clothes drying function, a control method for the clothes treating machine, and a clothes treating machine using the control method. The air in the space of the optical plasma irradiation module forms a sterilizing gas. The space of the module is connected to a clothes treating tank via a connecting pipe, and the optical plasma generator is controlled to supply the sterilizing gas to the inside of the clothes treating machine, thereby achieving a sterilizing and deodorizing effect on the clothes and / or the inside of the clothes treating tank.

This disclosure describes methods for manufacturing hybrid metal / composite battery shells. The hybrid shells, which can be deep, can consist of a metallic (e.g., steel or aluminum alloy), cross-shaped sub-shell with four rounded polymer / fiber composite corner inserts attached to recessed corners of the sub-shell. Overlapping connection points can be co-molded. Overlapping metallic connection surfaces can be pre-treated by laser ablation and / or plasma irradiation to increase the bond strength between the overlapping metal and polymer / fiber composite surfaces. Mechanical locking features can be used to increase the bond strength. Hybrid metal / composite shells can be manufactured by compression molding of different parts using a mold and a press.Resin Transfer Molding (RTM) with thermosetting resin can be used for co-molding four fiber preform corner inserts onto the cross-shaped partial shell. Alternatively, thermoplastic polymer / fiber composite prepreg corner inserts can be attached to the cross-shaped partial shell by compression molding and curing.

To provide a pattern forming method for a resist underlayer film exhibiting excellent edge roughness by plasma irradiation in comparison to a conventional organic underlayer film pattern.SOLUTION: A pattern forming method includes: a process of forming a resist underlayer on a substrate; a process of forming a silicon-containing resist interlayer on the resist underlayer; a process of forming a resist upper layer on the silicon-containing resist interlayer; a process of forming a pattern on the resist upper layer; a process of forming a resist underlayer pattern by a plurality of times of etching using the resist pattern as a mask; and a process of irradiating the resist underlayer pattern with plasma, wherein a composition containing a resin having an aromatic ring is used as a composition for forming the resist underlayer, and a plasma by which the resist underlayer is less etched than by an etching gas used in the process of forming the resist underlayer pattern is used as the plasma for the plasma irradiation.SELECTED DRAWING: Figure 1

The present invention is a method for forming a resist underlayer film on a substrate, the method including the steps of: (i) forming an underlayer-film-precursor film by coating a substrate with a composition for forming a resist underlayer film, containing (A) a polymer and an organic solvent, to obtain a coating film and subjecting the coating film to heat treatment at a temperature of 100°C or higher and 800°C or lower for 10 seconds to 7,200 seconds to cure the coating film; and (ii) forming a resist underlayer film by curing the underlayer-film-precursor film by plasma irradiation, where the polymer (A) is an aromatic ring-containing resin containing no hydroxy groups or organic groups represented by the following general formulae (1) in a repeating unit contained in the polymer, where "p" represents 0 or 1, and "*" represents an attachment point. This can provide a method for forming a resist underlayer film according to which it is possible to form a resist underlayer film that exhibits excellent dry etching resistance.

This plasma treatment system and method can be widely applied to any type or shape of object being treated with plasma, and eliminates the problems of cutting and attaching indicators during plasma treatment, as well as the problems of disposing of release paper and used indicators, while also providing flexibility to handle various plasma intensities. [Solution] A plasma processing system that irradiates an object to be processed with plasma, (1) A direct-liquid marker, which is a device loaded with plasma indicator ink, that applies an ink coating film whose optical properties change due to plasma irradiation to the workpiece and / or a peripheral member that is plasma-irradiated together with the workpiece, inside a plasma irradiation device, (2) A plasma irradiation device that irradiates the object to be processed and the surrounding members with plasma, (3) A measuring device for measuring the optical properties of the ink coating film that has been irradiated with plasma, (4) A removal device for removing the plasma-irradiated ink coating, A plasma processing system characterized by comprising the following features.

The invention discloses a preparation method of a catalyst with low noble metal content and application of the catalyst in argon oxygen removal. The catalyst can still meet the precision requirement of argon oxygen removal when the content of precious metal is lower than 0.1 wt%, a steady-state high-temperature environment is not needed in the preparation process, the catalyst is not modified by adding auxiliaries, and the precious metal component has the advantage of being easy to recycle and regenerate. The catalyst provided by the invention is a noble metal supported catalyst, noble metal is platinum group metal and a noble metal precursor supported on the surface of the composite oxide, and the activity of the catalyst is remarkably improved after being treated by one or a sequential combination process of Joule heat or plasma irradiation and other unsteady-state high-temperature method steps, so that the content of low noble metal in the catalyst is reduced; the method has high industrial application value.

The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000:where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1,where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2,where RA represents an organic group, RB represents a hydrogen atom or an organic group, andwhere R4 represents a hydrogen atom or hydrocarbon group.

The application discloses a method for preparing ceramsite by using hazardous waste zinc-nickel-containing sludge and kyanite flotation tailings and a product thereof, and the method comprises the following steps: uniformly mixing fine-grained zinc-nickel-containing sludge, kyanite flotation tailings and palygorskite ore powder, mixing and stirring the mixture with water after high-speed grinding, and performing low-temperature plasma irradiation treatment; after the reaction is completed, the mixture is granulated and dried to obtain green balls; sintering is performed under an air atmosphere, and the ceramsite is obtained after cooling. The method combining high-speed grinding, low-temperature plasma irradiation and sintering is adopted, the hazardous waste zinc-nickel-containing sludge and the general solid waste kyanite flotation tailings are simultaneously recycled and harmlessly disposed, the obtained ceramsite has no hazardous characteristics and has high strength. The application not only eliminates the environmental risks of the hazardous waste heavy metal sludge and the general solid waste kyanite flotation tailings, but also converts the hazardous waste heavy metal sludge and the general solid waste kyanite flotation tailings into usable building materials, and has double benefits of environment and economy.

To provide a disposal method of a used ion exchange resin and a disposal device of a used ion exchange resin which can efficiently dispose a large amount of a used ion exchange resin compared to conventional ones.SOLUTION: A disposal method of a used ion exchange resin includes: a plasma irradiation step of irradiating a used ion exchange resin with plasma; and a compression volume reduction step of compressing and volume reducing the used ion exchange resin irradiated with plasma in the plasma irradiation step.SELECTED DRAWING: Figure 1

This invention discloses a plasma irradiation platform for simulating solar wind bombardment of aerospace-grade chips. This platform is designed to simulate the blinding effect of high-speed solar wind plasma particle streams on aerospace-grade electronic chips. Specifically, it relates to the fields of pulsed plasma sources and chip irradiation detection technology, including an irradiation host system, a multi-pulse high-voltage, high-current power supply, a power controller, a vacuum chamber, a vacuum pump assembly, a high-speed pulse intake valve, a stage, and a real-time chip failure monitoring system. This invention can be used to simulate the impact of multi-pulse high-speed plasma irradiation on aerospace-grade chips in space on chip failure. The target plasma generated by the plasma source designed in this invention has parameters close to those of solar wind plasma in a space environment, making it an effective means of simulating the blinding effect of this phenomenon on aerospace-grade electronic chips.

The invention discloses a blanket printing process which comprises the following steps: S1, collaborative pretreatment: carrying out low-temperature soft lustring on a blanket gray fabric to ensure that the surface fibers of the blanket gray fabric are consistent, and then carrying out low-temperature plasma irradiation treatment and digital printing: adopting a digital ink-jet printing mode, the blanket grey cloth treated in the step S1 and with the surface temperature maintained at 25-35 DEG C is subjected to pattern printing and stepped color fixing, specifically, the printed blanket is subjected to pre-color fixing for 5-10 min in a hot and humid environment at 45-55 DEG C and then transferred into saturated steam at 102-108 DEG C to be subjected to main color fixing, and efficient post-treatment is conducted; and finally, carrying out gradient heating and drying under a negative pressure condition at 65-75 DEG C. The low-temperature soft light has the beneficial effects that the fibers are oriented through low-temperature soft light, and a foundation is laid for uniform printing. According to low-temperature plasma treatment with a specific gas ratio, on the premise that fibers are not damaged, micro-etching can be carried out on the surfaces of the fibers, hydrophilic groups are introduced, and the wettability and permeability controllability of ink are greatly improved.

As an example, the present invention relates to a hybrid bonding method using an organic insulating film as an insulating film. In a hybrid bonding method using an organic insulating film, a thermal expansion difference is sometimes generated between a terminal electrode made of metal or the like and the organic insulating film by heating during bonding, so that a predetermined step (D) needs to be provided in advance between the front end surface of the terminal electrode and the surface of the organic insulating film. In the present invention, in order to set the step (D), the surface of the semiconductor substrate (100) is irradiated with plasma (as an example, argon plasma). In this plasma irradiation, the organic insulating film (102) is etched by plasma such that the surface (102a) of the organic insulating film (102) of the semiconductor substrate (100) is closer to the inner side than the tip surface (103a) of the electrode (103).

Provided are a resist underlayer film forming method and a pattern forming method with which it is possible to form a resist underlayer film exhibiting excellent dry etching resistance. The resist underlayer film forming method is a method for forming a resist underlayer film on a substrate, and comprises the following steps: (i) applying a resist underlayer film forming composition containing (A) a polymer and an organic solvent on the substrate to obtain a coating film, and subjecting the coating film to a temperature of 100 DEG C to 800 DEG C for 10 seconds to 7,000 seconds; a step for forming an underlayer film precursor film by curing the underlayer film by heat treatment for 200 seconds; and (ii) curing the underlayer film precursor film by plasma irradiation to form a resist underlayer film. An aromatic ring-containing resin that does not contain a hydroxyl group or an organic group represented by general formula (1) in a repeating unit constituting the polymer is used as the polymer (A). (In general formula (1), p is 0 or 1, and * is a bonding part. > # imgabs0 #

A plasma irradiation apparatus including a container configured to store a liquid to be treated; a plasma generating device configured to generate plasma to irradiate the liquid to be treated stored in the container; and a container temperature measuring instrument configured to measure a temperature of the container.

As an example, the present invention relates to a hybrid bonding method using an organic insulating layer as an insulating layer. In the hybrid bonding method using an organic insulating layer, there may be a difference in thermal expansion between a terminal electrode made of metal or the like and the organic insulating layer due to heating at the time of bonding, and it is necessary to provide a predetermined level difference D between a tip end surface of the terminal electrode and a surface of the organic insulating layer in advance. In the present invention, in order to provide the level difference D, the surface of the semiconductor substrate 100 is irradiated with plasma (e.g. argon plasma). In this plasma irradiation, an organic insulating layer 102 is etched with plasma such that a surface 102a of the organic insulating layer 102 of the semiconductor substrate 100 is on the farther side than a tip end surface 103a of an electrode 103.

The invention discloses a preparation method for bonding a patterned diamond and an inverted AlGaN / GaN high-electron-mobility transistor, and the method comprises the following steps: polishing the surface of the diamond, and reducing the surface roughness of the diamond; patterning the surface of the diamond; growing SiC on the surface of the patterned diamond and the top of the AlGaN / GaN high electron mobility transistor, wherein the interface of the SiC and the diamond / GaN is a coherent interface; and aligning and bonding the patterned diamond and the inverted AlGaN / GaN high-electron-mobility transistor by virtue of Ar plasma irradiation under high vacuum, so as to obtain the Diamond / AlGaN / GaN high-electron-mobility transistor. The near junction bonding shortens the heat dissipation path, the patterned diamond surface increases the heat dissipation contact area, the coherent interface and the SiC with high thermal conductivity are used as the intermediate layer to reduce the interface thermal resistance, and the method provided by the invention lays a research foundation for improving the heat dissipation performance of a new generation of high-frequency and high-power AlGaN / GaN high electron mobility transistor.

An object of the present invention is to provide a plasma processing apparatus for performing plasma processing on a fluid, which is capable of suppressing adhesion of by-products to an electrode unit and suppressing a decrease in plasma processing efficiency.SOLUTION: Plasma emitting device 100 according to the present invention is plasma processing device 100 for performing plasma processing on a fluid, and includes electrodes 20 including at least one 20a of one type of electrodes and at least one 20a of the other type of electrodes facing the 20b of the one type of electrodes, fluid feeder 30 for feeding the fluid toward electrodes 20, and liquid feeder 40 for feeding a liquid to electrodes 20.SELECTED DRAWING: Figure 1

A MXene membrane with gradient pores, its preparation method and application are provided. The MXene membrane with gradient pores, excluding the substrate, includes the following layers in sequence from bottom to top: an ultra large pore MXene membrane layer with a thickness of 0-30 nanometers (nm) and a pore size of 2-5 nm; a large pore MXene membrane layer with a thickness of 0-30 nm and a pore size of 0.9-1.2 nm; a medium pore MXene membrane layer with a thickness of 20-50 nm and a pore size of 0.6-0.8 nm; and a small pore MXene membrane layer with a thickness of 40-60 nm and a pore size of 0.3-0.5 nm. The present disclosure prepares the MXene membrane with gradient pores by repeating spin-coating and plasma irradiation while limiting the irradiation time.

The invention relates to the technical field of plasmas, and discloses a multi-sample plasma irradiation sample table and an irradiation sample fixing bracket thereof. The irradiation sample fixing support comprises a base, an installation assembly, a probe and a cooling assembly, the base is provided with a plurality of installation faces which are sequentially arranged around a rotating axis and connected, and the base can rotate around the rotating axis so that the different installation faces can directly face plasma beams. Therefore, a probe or different samples installed on the base through the first installation assembly or the second installation assembly can directly face the plasma beam, and plasma irradiation is achieved. Multiple samples can be irradiated without repeatedly destroying vacuum, so that the experiment efficiency is improved; meanwhile, plasma parameters of an irradiation area can be measured through the probe, and the experiment accuracy is improved. The multi-sample plasma irradiation sample table comprises a rotating mechanism and an irradiation sample fixing support, and the rotating mechanism drives the base to rotate so that the probe or different samples can directly face plasma beams.

The present application relates to a kind of super-hydrophobic polyester fabric and its preparation method.The fabric can be prepared by the following method: first, polyester fabric is carried out plasma irradiation pretreatment;Second, 2-(perfluorooctyl) ethyl methacrylate and ammonium persulfate are prepared into finishing liquor;Finally, polyester fabric is reacted in finishing liquor, and super-hydrophobic polyester fabric is prepared.The super-hydrophobic polyester fabric prepared by the present application contains low surface energy substance fluorine element on the surface, and the apparent contact angle of water droplet on the surface of polyester fabric ranges between 153°-158°, which shows good super-hydrophobicity;After 10 times washing, the hydrophobic property of polyester fabric is still not obviously weakened.

This method for promoting the biosynthesis of a polyphenol includes a step for performing such a treatment that an aqueous plasma irradiation solution obtained by irradiating an aqueous solution containing sodium L-lactate with atmospheric plasma is applied to a site in a plant, wherein the site is capable of biosynthesizing a polyphenol. The method for promoting the biosynthesis of a polyphenol can increase the amount of the polyphenol accumulated in the site. The treatment is preferably performed by injecting or applying the aqueous plasma irradiation solution into or to the site.