199 results about "Plasma irradiation" patented technology

The present invention provides a crosslinkable elastomer composition, in which generation of HF under high temperature conditions is reduced, the decrease in weight to both NF₃ plasma treatment and O₃ treatment in the semiconductor manufacturing process is small and generation of foreign substances (particles) in these treatments is suppressed significantly.

Specifically, the present invention relates to a crosslinkable elastomer composition comprising a crosslinkable elastomer and a filler having a specific surface area of at least 0.5 m²/g and containing a synthetic polymer having a thermally and chemically stable aromatic ring in the main chain, a crosslinkable elastomer composition comprising a crosslinkable elastomer and nonoxide ceramics and a crosslinkable elastomer composition wherein the decrease in weight by NF₃ plasma irradiation is at most 0.20%.

The invention discloses a method for preparing sintering-free cement from municipal solid waste, which comprises the following steps: respectively weighing aluminum ash, diatomite and municipal solidwaste incineration fly ash, and mixing to obtain modified fly ash; respectively weighing sodium phosphate and the modified fly ash, and mixing to obtain alkali-doped modified fly ash; respectively weighing water and the alkali-doped modified fly ash, stirring, Meanwhile, carrying out low-temperature plasma irradiation, so as to obtain water-boiling-free mud slurry; and drying, grinding and sievingthe water-boiling-free mud to obtain the sintering-free cement prepared from the municipal solid waste. The invention also discloses the sintering-free cement prepared by the method. The minimum leaching values of Zn and Pb of the prepared sintering-free cement are far lower than the limit values of inorganic pollutants Zn and Pb in the Holland building material standard, and the content of dioxin is far lower than the limit values in the Household Refuse Landfill Pollution Control Standard (GB16889-2008).

The present invention provides a method of processing a substrate and a method of manufacturing a silicon carbide (SiC) substrate in which, when annealing processing is performed on a crystalline silicon carbide (SiC) substrate, the occurrence of surface roughness is suppressed. A substrate processing method according to an embodiment of the present invention includes a step of performing plasma irradiation on a single crystal silicon carbide (SiC) substrate (1) and a step of performing high temperature heating processing on the single crystal silicon carbide (SiC) substrate (1) in which the plasma irradiation is performed.

A preparation method of a polyether sulfone functional separation membrane supporting a dendritic polyamide-amine functional group includes the steps of: 1) performing chloroacetylation and aminationmodification treatment to polyether sulfone successively and preparing chloroacetylchlorine-diethylenetriamine-polyether sulfone separation membrane chips; 2) with methyl acrylate and ethylenediamineas main reagents, performing modification to the membrane chips by means of Michael addition and amidation reactions with plasma irradiation grafting synergistic technology; 3) preparing the polyethersulfone functional separation membrane supporting the dendritic polyamide-amine functional group via phase-transfer technology. The method is simple, wherein the grafting efficiency of the dendriticpolyamide-amine functional group is high. The functional group has large supporting quantity in the separation membrane, is stable in the separation membrane and is not liable to lose. The polyether sulfone functional separation membrane can remove heavy metals and phosphates in water body high-effectively and has a board application prospect in the field of water pollution control.

The invention discloses a method for preparing a sintering-free cementing material from waste incineration fly ash. The method comprises the following steps: (1) mixing silicon slag and blast furnaceslag, grinding, sieving to obtain a mixed silicon material, and mixing graphite powder and waste incineration fly ash to obtain graphite fly ash; (2) mixing sodium hexametaphosphate, the mixed siliconmaterial and graphite fly ash to obtain a gel precursor material; (3) dissolving the gelling precursor material in water, stirring while performing low-temperature plasma irradiation, drying, grinding and sieving to obtain a secondary cementing material; (4) mixing aluminum hydroxide waste and alkaline residues, grinding, and sieving to obtain an aluminum activator; and (5) uniformly mixing the aluminum activator and the secondary cementing material to obtain the cementing material. High-temperature sintering is not needed in the preparation process, so that process energy consumption is greatly reduced; the cementing material can achieve the highest heavy metal curing rate of 99.24%, the highest chlorine removal rate of 98.75% and the highest dioxin substance removal rate of 98.37%; andthe uniaxial compressive strength of a prepared mortar test block is as high as 50.68 MPa.

A method of producing a semiconductor chip, including the following steps (a) to (d):

• • (a) a step of, in the state of having laminated a mask-integrated surface protective tape on the side of a patterned surface of a semiconductor wafer, grinding the backing-face of the semiconductor wafer; laminating a wafer fixing tape on the backing-face side of the ground semiconductor wafer; and supporting and fixing the wafer to a ring flame;
  • (b) a step of, after peeling the surface protective tape thereby to expose the mask material layer on top, forming an opening of a street of the semiconductor wafer;
  • (c) a plasma dicing step of segmentalizing the semiconductor wafer by a plasma irradiation to singulate it into semiconductor chips; and
  • (d) an ashing step of removing the mask material layer by the plasma irradiation.

The invention discloses a pulsimeter based on a graphene edge embedded type nano-film photoelectric sensor. The pulsimeter comprises an infrared light source unit for fixing a finger, to be detected, of a user and emitting infrared light of a specified wavelength to penetrate through the finger of the user; a photoelectric sensor unit for collecting an infrared light signal and generating a photoelectric signal according to the infrared light signal, wherein a graphene edge embedded type nano-film is grown on the surface of a silicon substrate of the photoelectric sensor unit through ECR plasma irradiation; a rectifying and amplifying unit for rectifying and amplifying the photoelectric signal to obtain a rectified and amplified signal; and a signal acquisition unit for acquiring and storing the rectified and amplified signal. According to the pulsimeter, by capturing photogenerated electrons with a boundary quantum well, recombination of photogenerated electron-hole pairs can be reduced greatly, the photoresponse rate can be increased, and human fingertip pulse signals can be measured more accurately and stably.

The invention discloses a composite membrane prepared by a low-temperature plasma technology under low pressure. The composite membrane is prepared by the following steps of: pre-coating grafting monomers on a porous membrane serving as a basement membrane; irradiating the porous membrane pre-coated with the grafting monomers by using plasmas to initiate synchronous irradiation grafting reaction;performing grafting reaction after plasma irradiation; and performing posttreatment to obtain the composite membrane, wherein the porous membrane is insoluble in aromatic hydrocarbon and the graftingmonomers have high affinity to alcohol and the aromatic hydrocarbon. The invention has the advantage that: under normal pressure, the composite membrane prepared by graft-filling polymerization initiated by the low-temperature plasma technology has good selectivity and penetration flux. The composite membrane prepared by the low-temperature plasma technology under normal pressure has the characteristics of environment-friendly preparation process and suitability for industrial production, and has good application prospect.

The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a method for fabricating the same, wherein an electroconductive carbon layer is formed between the copper material-a copper wiring of a wiring structure in grooves in which the copper material is buried into a wiring groove or holes formed in the organic interlayer film mainly composed of carbon-and the organic interlayer film. This electroconductive carbon layer is formed after forming wiring grooves or holes in the desired region of the organic interlayer film, by a modification of the inner wall of the wiring grooves or holes by plasma irradiation. The copper wiring of the wiring structure in grooves as described above is formed by depositing copper on the electroconductive carbon layer.

In wire bonding in which a bonding tool is cleaned through plasma irradiation, the plasma application to a wire and therefore the formation of an unexpectedly large-sized ball in the following bonding operation is prevented. The cleaning of the bonding tool through plasma irradiation is followed by dummy bonding, the bonding tool is cleaned with a ball formed thereon, or a prohibition period is provided during which ball forming is prohibited until the energy of plasma attenuates after the bonding tool is cleaned to prevent the plasma irradiation from having an impact on the bonding operation so that the ball cannot have an increased diameter.

The invention discloses a method for preparing a geopolymer photocatalyst from municipal solid waste incineration fly ash. The method comprises the following steps of: weighing graphite powder and municipal solid waste incineration fly ash, and mixing the graphite powder and the municipal solid waste incineration fly ash to obtain carbon-doped municipal solid waste incineration fly ash; weighing silica fume and aluminum ash, and mixing the silica fume and aluminum ash to obtain a silica-alumina additive; weighing molybdenite powder, the silicon-aluminum additive and the carbon-doped municipalsolid waste incineration fly ash, and mixing the molybdenite powder, the silicon-aluminum additive and the carbon-doped municipal solid waste incineration fly ash to obtain a catalyst precursor material; weighing water and the catalyst precursor material, and performing low-temperature plasma irradiation to obtain photocatalyst slurry; and drying and grinding the photocatalyst slurry to obtain thegeopolymer photocatalyst. The invention also discloses a geopolymer photocatalyst and application thereof. According to the method, the stabilization of heavy metal and the mineralization of dioxin in the fly ash can be achieved, and part of the heavy metal can be converted into a semiconductor material. A molybdenum source and a carbon source are a low-value molybdenite raw material and graphitepowder respectively. The geopolymer photocatalyst can remove 98% of COD, 99% of heavy metal pollutants, 99% of ammonia nitrogen and 98% of total phosphorus at most.

An object of the present invention is to provide a method for repairing a display device according to which a wide variety of regions can be repaired in various ways using various materials, as well as an apparatus for the same. The present invention provides a repairing apparatus for repairing a pattern defect on a surface of a substrate in a display device where an electronic circuit pattern having the above described pattern defect is formed, characterized by having a plasma irradiation means for repairing the above described pattern defect through local irradiation of a region including the above described pattern defect with plasma.

The invention discloses a cooperative treatment method for waste incineration fly ash and printing and dyeing waste liquid. The method comprises the following steps: (1) mixing and stirring water andwaste incineration fly ash, and pouring a mixture into an electric device for electrifying treatment; (2) collecting gas in an electric anode chamber, introducing the gas into a low-temperature plasmairradiation device as action atmosphere, and carrying out low-temperature plasma irradiation treatment on the printing and dyeing waste liquid to obtain primary printing and dyeing waste liquid treatment liquid; (3) digging out fly ash in a near-cathode sample area of the electric device to obtain near-cathode fly ash slurry, mixing and stirring sodium phosphate, aluminum hydroxide and the near-cathode fly ash slurry, and carrying out low-temperature plasma irradiation, drying, grinding and sieving to obtain a cathode fly ash adsorbent; and (4) mixing and stirring the cathode fly ash adsorbent and the primary printing and dyeing waste liquid treatment liquid, carrying out solid-liquid separation to obtain printing and dyeing waste liquid purification liquid and organic fly ash slurry, andgranulating, drying, sintering and cooling the organic fly ash slurry to obtain fly ash-based sintered ceramsite. According to the cooperative treatment method, purification of the printing and dyeing waste liquid and resource utilization of the waste incineration fly ash can be simultaneously realized.

The invention relates to a production method of a fluoride-free waterproof woven fabric. The production method comprises the following processes in sequence: (a) pre-treatment process; (b) dyeing process; (c) cleaning process; (d) plasma process; and (e) fluoride-free waterproof heat setting process. The production method is characterized in that plasma beams emitted by a plasma generator are utilized to irradiate the woven fabric to ensure that a concave-convex coarse structure is formed on the surface of the treated fabric and then fluoride-free finishing liquid is padded on the coarse surface of the fabric. The coarse structure on the surface of the plasma irradiated fabric can form a lotus effect so as to enhance the water repellency of the fabric. Meanwhile, after the plasma irradiation, reactive free radicals can be generated on the fiber surface so that the combination of the subsequent fluoride-free waterproof finishing agent and the fiber surface is steady and the fabric still has water repellency after repeated washing. According to the production method, the technical problems of low water repellency and washing intolerance in present fluoride-free waterproof finishing are solved.

The invention relates to a plasma irradiation platform, and belongs to the technical field of application of plasma. The plasma irradiation platform comprises an ion source, a cavity and a laser heating system, wherein the ion source is sealed inside the cavity, and the laser heating system is arranged outside the cavity. The ion source comprises a quartz tube, a copper tube and a shielding cover, wherein the copper tube is wound on the outer wall of the quartz tube, the shielding cover is used for shielding a radio frequency electric field, and the quartz tube and the copper tube wound on the outer wall of the quartz tube are arranged inside the shielding cover. An air inlet is arranged at the upper end of the quartz tube, an ion spraying port is arranged at the lower end of the quartz tube, two ends of the copper tube are connected with two ends of a radio frequency power supply outside the cavity, a through hole is formed at the bottom of the shielding cover, a sample platform arranged inside the cavity is located under the ion source, and a quartz window arranged under the sample platform is in seal connection with the cavity. The laser heating system comprises a combination type laser which is fixed under the quartz window. The plasma irradiation platform has the advantages of being simple in equipment, low in cost, short in experimental period, and high in experimental efficiency.