The present invention discloses a short-gate
tunneling field effect transistor having a non-uniformly doped
vertical channel and a fabrication method thereof. The short-gate
tunneling field effect transistor has a
vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a
doping concentration in the channel region appears a
Gaussian distribution along a vertical direction and the
doping concentration in the channel near the drain region is higher while the
doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the
vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region. As compared with a conventional TFET, the short-gate
tunneling field effect transistor according to the present invention can effectively suppress the
impact of the electrical field at the drain region on the tunneling width of the tunneling junction at the source region; the super exponential relationship between the output
tunneling current and the drain
voltage is weakened; and the output characteristic of the
transistor is significantly improved. Meanwhile, the tunneling
field effect transistor is beneficial to increase the on-current of the
transistor and to
gain a steeper sub-threshold slope.