Welding structure and welding method of target materials and back plates

A welding method and target material technology, which is applied in the direction of welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problem that the welding strength cannot meet the requirements of use, titanium targets and aluminum back plates cannot achieve large-area butt welding, and hinder Diffusion welding and other issues, to achieve the effect of saving process costs, improving bonding strength, and preventing metal from being oxidized

Inactive Publication Date: 2010-02-17
KONFOONG MATERIALS INTERNATIONAL CO LTD
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Problems solved by technology

When the temperature rises, the surfaces of the two will quickly form an oxide layer in the air, which hinders the diffusion welding between the two, so that the titanium target and the aluminum back plate cannot be welded in a large area; and the final The welding strength of the product cannot meet the requirements of use

Method used

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  • Welding structure and welding method of target materials and back plates
  • Welding structure and welding method of target materials and back plates
  • Welding structure and welding method of target materials and back plates

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Embodiment Construction

[0014] figure 1 It is a flow chart of a specific embodiment for making the welding structure of the target and the back plate according to the present invention. Such as figure 1 As shown, step S101 is performed to provide a titanium target and an aluminum back plate;

[0015] The titanium target is high-purity titanium (4N5) or ceramic sputtered titanium (5N).

[0016] Execute step S102, process the titanium target and the aluminum back plate, and process the welding surface of the titanium target into a thread shape;

[0017] The processing technology is mechanical processing.

[0018] Execute step S103, using a hot pressing method to weld the titanium target and the aluminum back plate to form a target assembly;

[0019] Before the welding process, there are also steps: roughening the surface of the aluminum back plate; cleaning the titanium target and the aluminum back plate, among which the titanium target is pickled, and the aluminum back plate is washed with alcohol...

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Abstract

The invention relates to a welding structure and a welding method of target materials and back plates, wherein the welding method of the target materials and the back plates comprises the following steps: providing a titanium target material and an aluminum back plate; machining the titanium target material and the aluminum back plate, machining into the shape of threads on a welding surface of the titanium target material; welding the titanium target material and the aluminum back plate by a hot pressed method to form a target material assembly; and carrying out the thermal diffusion processing on the target material assembly, and then air cooling. An oxidation layer on the surface of the titanium target material can be torn by machining the titanium target material into the shape of threads, and the oxidation layer on the surface of the aluminum back plate can be thinned by machining the aluminum back plate, thereby further improving the bonding strength between the titanium target material and the aluminum back plate.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding structure and method of a target material and a back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. [0003] In the existing process, the working environment of the target assembly is relatively harsh. For example, in the sputtering process, the working temperature of the target assembly is relatively high, such as 300°C to 500°C; in addition, one side of the target assembly is filled with cooling The water is strongly cold while the other side is at 10 -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the upper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/00B23K20/02B23K20/24
Inventor 姚力军潘杰王学泽周友平刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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