Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof

a technology of carbon nitride and thin film transistor, which is applied in the direction of chemical vapor deposition coating, non-metallic protective coating application, coating, etc., can solve the problems of low dielectric constant of insulating film, circuit delay, and conventional composition of carbon nitride with deposition method and limited properties

Inactive Publication Date: 2004-11-18
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the field of semiconductor in late years, with miniaturization, a high dielectric constant of an insulating film is considered to be a cause of circuit delay, and an attempt to use a composition of carbon nitride, which is expected to have a low dielectric constant, as an insulating film has been made.
However, a conventional composition of carbon nitride has a deposition method and properties limited.
In result, the deposition method of the composition of carbon nitride has a degree of freedom limited by the material of the object to be coated.
In particular, in the case of a resin material such as a plastic bottle, which has a low softening point, it is difficult to set a low deposition temperature although it is desired to avoid a high deposition temperature in view of the material.
As a result of further producing an increase in deposition temperature, it takes a long time to set a constant high temperature and to cool down.
Besides, an insulating film in a semiconductor device typified by a conventional thin film transistor produces low stress relaxation and low coverage for a step since the insulating film has a low hydrogen concentration.
In addition, the organic light-emitting layer has a problem of degradation due to moisture and oxygen, and a problem with emission of hydrogen and oxygen from films such as the protective film and an interlayer insulating film.
Since a current packaging container or bag for food is coated with an aluminum material in order to improve a barrier against gas, it is not possible to check the food at the time of purchase.

Method used

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  • Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof
  • Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof
  • Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof

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embodiment

[0149] [Embodiment Mode 7]

[0150] An active matrix substrate that has a composition including carbon nitride according to the present invention can be applied to various electronic devices. The electronic devices include a personal digital assistance (a mobile phone, a mobile computer, a portable game machine, or an electronic book), a video camera, a digital camera, a goggle type display, a display, and a navigation system can be given. FIGS. 9A to 9E show examples of the electronic devices.

[0151] FIG. 9A shows a display device, which includes a frame body 4001, voice output portion 4002, and a display portion 4003. It is possible to use an active matrix substrate that has a composition including carbon nitride according to the present invention to complete the display portion 4003 that uses a light-emitting element or a liquid crystal material. The display device includes all display devices for displaying information, such as a personal computer, a receiver of TV broadcasting and ...

embodiments

[0157] [Embodiment 1]

[0158] The present embodiment shows results of component analysis of compositions including carbon nitride, which are formed by plasma CVD with the use of C.sub.2H.sub.2 / N.sub.2 gas, C.sub.2H.sub.4 / N.sub.2 gas, and C.sub.2H.sub.4 / NH.sub.3 gas.

[0159] Table 1 shows results of component analysis (NRA / HFS) of compositions including carbon nitride according to the present invention, samples A to C, which are manufactured under different conditions. The samples A and B have a film thickness of approximately 100 nm and the sample C has a film thickness of approximately 10 nm.

[0160] [Table 1]

[0161] The present embodiment proves that the ratio of hydrogen concentration in the composition including carbon nitride (hydrogen ratio) ranges approximately from 35 to 40 atomic % (strictly, from 35.8 to 40.4 atomic %). Since a SiN film generally has a hydrogen ratio of approximately 25 atomic %, it is understood that the composition including carbon nitride according to the pres...

embodiment 2

[0165] [Embodiment 2]

[0166] The present embodiment will describe a desorption temperature of hydrogen in a composition including carbon nitride according to the present invention, which are measured by TDS (Thermal Desorption Spectroscopy) analysis.

[0167] In the TDS analysis, mass spectrum of a constituent desorbed from a sample is obtained at each temperature by mass spectroscopy of a released gas molecule while the sample is subjected to infrared heating in high vacuum. A measurement system has a background vacuum of 10.sup.-9 Torr, and sensitivity to a trace constituent can be expected. In the present embodiment, ESCO's EMD-WA1000S is used.

[0168] In the present embodiment, FIG. 5 shows a comparison of results of the samples A and B that are the compositions including carbon nitride according to the present invention, which are shown in Table 1, and a silicon nitride (SiN) film and a silicon oxynitride (SiNO) film, which are formed by plasma CVD.

[0169] The results in FIG. 5 show t...

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Abstract

A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. Consequently, a composition including carbon nitride according to the present invention is formed at a deposition temperature that enables to include hydrogen in the composition at 30 to 45 atomic %, for example, at temperatures of 100° C. or less, preferably 50° C. or less, more preferably from 20° C. to 30° C., with stability and adhesiveness kept.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a composition including carbon nitride, which can be formed at a low temperature and is suitable, and a method of manufacturing thereof.[0003] Additionally, the present invention also relates to goods such as containers for food or beverage, and electronic parts, which are coated with a composition including carbon nitride according to the present invention. Moreover, the present invention relates to a thin film transistor that has the composition including carbon nitride as an insulating film such as an interlayer insulating film, a base film, or the other insulating film; a display device, a liquid crystal display device, and the other display device, which comprise the thin film transistor; and methods for manufacturing thereof.[0004] 2. Description of the Related Arts[0005] Conventionally, research has been conducted in wide range of fields while making use of properties of a composition of carbon nitride.[0...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/34H01L21/318H05K3/28
CPCC23C16/347H01L21/318H05K3/28H01L21/02274H01L21/02115
Inventor MAEKAWA, SHINJI
Owner SEMICON ENERGY LAB CO LTD
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