Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof
a technology of carbon nitride and thin film transistor, which is applied in the direction of chemical vapor deposition coating, non-metallic protective coating application, coating, etc., can solve the problems of low dielectric constant of insulating film, circuit delay, and conventional composition of carbon nitride with deposition method and limited properties
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embodiment
[0149] [Embodiment Mode 7]
[0150] An active matrix substrate that has a composition including carbon nitride according to the present invention can be applied to various electronic devices. The electronic devices include a personal digital assistance (a mobile phone, a mobile computer, a portable game machine, or an electronic book), a video camera, a digital camera, a goggle type display, a display, and a navigation system can be given. FIGS. 9A to 9E show examples of the electronic devices.
[0151] FIG. 9A shows a display device, which includes a frame body 4001, voice output portion 4002, and a display portion 4003. It is possible to use an active matrix substrate that has a composition including carbon nitride according to the present invention to complete the display portion 4003 that uses a light-emitting element or a liquid crystal material. The display device includes all display devices for displaying information, such as a personal computer, a receiver of TV broadcasting and ...
embodiments
[0157] [Embodiment 1]
[0158] The present embodiment shows results of component analysis of compositions including carbon nitride, which are formed by plasma CVD with the use of C.sub.2H.sub.2 / N.sub.2 gas, C.sub.2H.sub.4 / N.sub.2 gas, and C.sub.2H.sub.4 / NH.sub.3 gas.
[0159] Table 1 shows results of component analysis (NRA / HFS) of compositions including carbon nitride according to the present invention, samples A to C, which are manufactured under different conditions. The samples A and B have a film thickness of approximately 100 nm and the sample C has a film thickness of approximately 10 nm.
[0160] [Table 1]
[0161] The present embodiment proves that the ratio of hydrogen concentration in the composition including carbon nitride (hydrogen ratio) ranges approximately from 35 to 40 atomic % (strictly, from 35.8 to 40.4 atomic %). Since a SiN film generally has a hydrogen ratio of approximately 25 atomic %, it is understood that the composition including carbon nitride according to the pres...
embodiment 2
[0165] [Embodiment 2]
[0166] The present embodiment will describe a desorption temperature of hydrogen in a composition including carbon nitride according to the present invention, which are measured by TDS (Thermal Desorption Spectroscopy) analysis.
[0167] In the TDS analysis, mass spectrum of a constituent desorbed from a sample is obtained at each temperature by mass spectroscopy of a released gas molecule while the sample is subjected to infrared heating in high vacuum. A measurement system has a background vacuum of 10.sup.-9 Torr, and sensitivity to a trace constituent can be expected. In the present embodiment, ESCO's EMD-WA1000S is used.
[0168] In the present embodiment, FIG. 5 shows a comparison of results of the samples A and B that are the compositions including carbon nitride according to the present invention, which are shown in Table 1, and a silicon nitride (SiN) film and a silicon oxynitride (SiNO) film, which are formed by plasma CVD.
[0169] The results in FIG. 5 show t...
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