88 results about "Bonding alloy" patented technology

The invention relates to a bonding alloy wire and a production technology thereof. The bonding alloy wire comprises: a base material and a coating plated on a base material surface. The base material is a silver material with a total purity which is greater than or equal to 99.9% and the silver material is added with alloy elements: Ca, Pd and Au. The coating is gold. The production technology ofthe bonding alloy wire comprises the following steps: 1) casting the base material formed by the silver and the alloy elements; 2) performing a large wire drawing to the base material after the fusion casting; 3) plating the gold on the surface of the base material after the large wire drawing; 4) performing wire drawing to the base material whose surface is plated with the gold; 5) performing anannealing process to the gold-plated base material after the wire drawing so as to obtain a needed gold bonding wire. In the invention, the high pure silver material is used as a base, the alloy elements are added and the silver material surface is plated with the gold so that costs can be greatly reduced. An electrical conductivity of the bonding alloy wire whose wire diameter is the same with the wire diameter of the traditional gold bonding wire is higher than the electrical conductivity of the traditional gold bonding wire. The bonding alloy wire of the invention is suitable for an integrated circuit, large-scale integrated circuit miniaturization packaging, a discrete device and LED packaging. The production technology of the bonding alloy wire is convenient and practical.

Transferable probe tips including a metallic probe, a delamination layer covering a portion of the metallic probe, and a bonding alloy, wherein the bonding alloy contacts the metallic probe at a portion of the probe that is not covered by the delamination layer are provided herein. Also, techniques for creating a transferable probe tip are provided, including etching a handler substrate to form one or more via arrays, depositing a delamination layer in each via array, depositing one or more metals in each via array to form a probe tip structure, and depositing a bonding alloy on a portion of the probe tip structure that is not covered by the delamination layer. Additionally, techniques for transferring transferable probe tips are provided, including removing a handler substrate from a probe tip structure, and transferring the probe tip structure via flip-chip joining the probe tip structure to a target probe head substrate.

The invention discloses a formula and a technique for manufacturing a geophysical prospecting bit by powder sintering. The formula comprises the following raw materials: in the mixed tungsten carbide powder, 60 to 80 meshes of tungsten carbide powder is 30 percent to 40 percent, 80 to 200 meshes of the tungsten carbide powder is 60 percent to 70 percent, the proportion of the tungsten carbide powder, bonding alloy and dehydrated sodium tetraborate is 100:62.5:5 and the bonding alloy is copper-manganese-nickel alloy, and the proportion of the copper, manganese and nickel is 68:27:11; and the technique comprises the steps of die making, material mixing, preprocessing of steel body, filling, sintering and trimming. At present, the geophysical prospecting bit is mainly processed and manufactured mechanically, and the material and the structure of the bit is more single; and in order to adapt to the exploration of areas with complex formations, the invention adopts powdery materials which are easy to change the material of the bit and can manufacture the bit with complex structure by designing a mold. The formula has low cost, the performance of the finished product is reliable, the technique steps are optimized properly, the technique is simplified and the cost-performance ratio is high.

An aluminum bonding alloy is an Ni—Mg alloy for bonding aluminum and a non-aluminum metal selected from steel, copper, nickel or titanium. The Ni—Mg alloy consists essentially of 0.08-0.90 mass % Mg, and the balance of Ni and inevitable impurities. A clad material includes a non-aluminum metal layer made of the non-aluminum metal and a bonding alloy layer made of the aluminum bonding alloy. The non-aluminum metal layer and the bonding alloy layer are bonded together by pressure welding and diffusion bonding.

A boron-free and silicon-free bonding alloy (16) for joining with a superalloy base material (12, 14). The bonding alloy includes aluminum in a concentration that is higher than the concentration of aluminum in the base material in order to depress the melting temperature for the bonding alloy to facilitate liquid phase diffusion bonding without melting the base material. The concentration of aluminum in the bonding alloy may be at least twice that of the concentration of aluminum in the base material. For joining cobalt-based superalloy materials that do no contain aluminum, the concentration of aluminum in the bonding alloy may be at least 5 wt. %.

The invention relates to a micromechanical method and a corresponding assembly for bonding semiconductor substrates and a correspondingly bonded semiconductor chip. The assembly according to the invention comprises a semiconductor substrate having a chip pattern having a plurality of semiconductor chips (1), each having a functional region (4) and an edge region (4a) surrounding the functional region (4), wherein there is a bonding frame (2) made of a bonding alloy made from at least two alloy components in the edge region (4a), spaced apart from the functional region (4). Within the part (4a2) of the edge region (4a) surrounding the bonding frame (2) between the bonding frame (2) and the functional region (4), there is at least one stop frame (7; 7a, 7b; 7b'; 70) made of at least one of the alloy components, which is designed such that when a melt of the bond alloy contacts the stop frame (7; 7a, 7b; 7b'; 70) during bonding, the bonding alloy solidifies.

Transferable probe tips including a metallic probe, a delamination layer covering a portion of the metallic probe, and a bonding alloy, wherein the bonding alloy contacts the metallic probe at a portion of the probe that is not covered by the delamination layer are provided herein. Also, techniques for creating a transferable probe tip are provided, including etching a handler substrate to form one or more via arrays, depositing a delamination layer in each via array, depositing one or more metals in each via array to form a probe tip structure, and depositing a bonding alloy on a portion of the probe tip structure that is not covered by the delamination layer. Additionally, techniques for transferring transferable probe tips are provided, including removing a handler substrate from a probe tip structure, and transferring the probe tip structure via flip-chip joining the probe tip structure to a target probe head substrate.

The invention discloses an imitation gold bonding alloy wire and a preparation method thereof. The imitation gold bonding alloy wire comprises 65-80wt% of alloy wire silver, 17-32wt% of copper, 0.5-2wt % of indium and 0.5-1wt% of palladium. A certain proportion of copper, palladium and indium are added on the basis of the silver, so that the cost of the raw materials is extremely low. The imitation gold bonding alloy wire has excellent mechanical performance and can meet the welding technique requirements under conventional conditions, and the manufacturing cost of LED (Light Emitting Diode) and IC (Integrated Circuit) encapsulation can be greatly reduced; meanwhile, the color of the appearance of the imitation gold bonding alloy wire is consistent with the color of 22K-18K gold, and the perfect imitation gold is obtained.

The invention relates to a method for preparing a bonding gold-silver alloy, and belongs to the technical field of bonding wire processing technology. A bonded gold-silver alloy wire is composed of metal materials in the following weight ratio: 20-30% silver, 5-1000ppm palladium, calcium, beryllium and cerium, and the remaining content is gold; the preparation method comprises the following steps: 1) Material preparation; 2) alloy ingot melting; 3) drawing and casting alloy rod; 4) wire drawing; 5) annealing; 6) winding; 7) packaging. The invention discloses a method for preparing bonded gold-silver alloy wire, which has reasonable and standardized process design and is easy to operate, and the produced bonded gold-silver alloy wire has strong electrical conductivity, stable chemical properties, good oxidation resistance, fluidity and plasticity, and has the advantages of High breaking force and good elongation, and moderate price, can fully meet the performance requirements of the semiconductor packaging industry and LED lighting technology for bonding gold-silver alloy wire.

A precision machine part is made of a plurality of pieces with a transient liquid phase diffusion bonding alloy provided between the pieces to bond them together. The precision machine part has one or more conveyance passages formed in it, has a longitudinal axis and is configured to permit passage of liquid or gas through the conveyance passage from a pipe line or cylinder. The pieces of the precision machine part are adhered to each other by transient liquid phase bonding with a ribbon of an amorphous bonding alloy. The bonding alloy can contain 1 to 10 atomic % V or can contain 1 to 15 atomic % of B or P or a mixture of B and P and 1 to 10 atomic % V, the balance being Fe and unavoidable impurities, and can exhibit an amount of contraction in a bonding stress loading direction caused by plastic deformation in the bonding process of not more than 5%. The bonding alloy may be an amorphous Ni-based alloy.

The invention relates to a bonding alloy wire and preparation and application thereof, and belongs to the technical field of bonding wire processing. Components of the bonding alloy wire include, by mass, 92%-99% of silver, 0.5%-4% of palladium, 0.1%-2% of copper, 0.1%-2% of gold, gallium with the concentration being 20-200 PPM, cerium with the concentration being 20-200 PPM, platinum with the concentration being 20-200 PPM and lanthanum with the concentration being 20-200 PPM. The bonding alloy wire with the section diameter smaller than or equal to 50 micrometers is prepared after casting and wire drawing. According to the bonding alloy wire, the preparation and the application, a high-purity silver material is used as the base, the alloy elements are added, the bonding wire with a smallelongation fluctuation range is prepared, the abnormal short line frequency is decreased, and the bonding productivity and the device operation ratio are increased. The bonding alloy wire, the preparation and the application are suitable for miniaturization packaging of integrated circuits and large scale integrated circuits and are also suitable for packaging of discrete devices and LEDs. The bonding alloy wire is simple in preparation method and good in practicability.

The invention relates to a metal-oxide semiconductor field effect transistor and particularly relates to the metal-oxide semiconductor field effect transistor integrated with a capacitor, and a manufacturing method of the metal-oxide semiconductor field effect transistor integrated with the capacitor. According to the invention, the capacitor is directly integrated on the metal-oxide semiconductor field effect transistor, so that the mode that the metal-oxide semiconductor field effect transistor tube is connected with an external capacitor by a bonding alloy wire is replaced, and further the discrete inductance in the line connection can be eliminated greatly. Due to the existence of a capacitance pole plate and a dielectric layer, the thickness of a silicon substrate and the mechanical strength of the silicon substrate are improved, and according to the advantages, the silicon substrate can be thinned so as to obtain low resistance of the metal-oxide semiconductor field effect transistor.