The invention discloses a substrate-free high-power amplitude
limiter and a preparation method thereof, and the method comprises the steps: preparing a PIN amplitude limiting tube front surface technology on the surface of a PIN amplitude limiting
diode material, carrying out the
etching of a mesa structure which exposes P+, I and N+, and preparing a
metal upper
electrode; performing the
spin coating of the front surface of the material containing the
PIN diode mesa structure with an
adhesive; oppositely and temporarily bonding with the front surface of the temporary slide;
thinning and removing the residual substrate; preparing a
metal lower
electrode on the back surface of the
PIN diode material after the substrate is removed; separating the temporary slide glass, and cleaning and scribing the slide glass to obtain the high-power amplitude
limiter consisting of a PIN amplitude limiting
diode without a substrate and a
metal electrode positioned on the back surface of the
diode. According to the invention, the Si / GaAs substrate of the traditional PIN amplitude limiting diode is removed, the metal with higher
thermal conductivity is used, and meanwhile, the metal material has lower series resistance compared with a
semiconductor, so that the tolerance power of the PIN amplitude limiting tube is further improved.