A bond alloy wire and a preparation method thereof

Abstract

A bond alloy wire disclosed in the invention includes the following ingredients in percentage by mass, 1, 99 to 99.5 percent of gold, 0.300 to 0.55 percent of cop, 0.190 to 0.44 percent of palladium,0.001 to 0.002 percent of sil, 0.0005 to 0.003 percent of nickel, 0.0005 to 0.0015 percent of bismuth, 0.0005 to 0.001 percent of beryllium, 0.0005 to 0.001 percent of cerium, 0.001 to 0.003 percent of zinc, 0.001 to 0.002 percent of magnesium, 0.0005 to 0.002 percent of calcium, 0.0002 to 0.0008 percent of aluminum and 0.0009 to 0.0035 percent of lead. Due to the action of palladium and copper, the production of gold and aluminum compounds in isolation, the key alloy wire changes the traditional concept of manufacturing the key alloy wire, From the traditional bonding wire with 99.99% gold content to the wire with 99% gold content, the bonding alloy wire not only improves the strength of the wire, but also does not form Kendall cavitation after being used for more than 4000 hours. The connection between the ball welding and the electrode is good, which ensures the service life of the integrated circuit.

Description

technical field [0001] The invention relates to the technical field of bonding wire processing, in particular to a bonding wire and a preparation method thereof. Background technique [0002] Bonding wire is the key lead material used to connect integrated circuit or transistor chip dies to lead frames. In recent years, with the rapid development of the semiconductor industry, the integration degree of integrated circuits has become higher and higher, the thickness of the circuit board has become smaller and smaller, the number of electrodes on the device has become more and more, the electrode spacing has become narrower, and the packaging density has also been corresponding. It is becoming smaller and smaller, and the bonding wire is an important accessory in semiconductors. It is often used as an inner lead for microelectronic packaging and is an important basic material for integrated circuits and semiconductor components. It is objectively required that the bonding wire...

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the general bonding gold wire content is 99.99%. After bonding, the aluminum metal on the chip electrode will increase with time, and the effect of current and heat energy will form gold-aluminum compounds with gold. The longer the integrated block is used Long, more than 3000h, the more the compound, the Kendall cavity will be formed between the bottom of the ball joint and the electrode, resulting in an open circuit, which is the failure and damage of the integrated circuit

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