12 results about "Quasicrystal" patented technology

Systems and methods of producing unclonable devices are disclosed. Robust optical physical unclonable function devices use disordered photonic integrated circuits. Optical physical unclonable functions based on speckle patterns, chaos, or ‘strong’ disorder are so far notoriously sensitive to probing and / or environmental variations. A presently disclosed optical physical unclonable function is designed for robustness against fluctuations in optical angular / spatial alignment, polarization, and temperature using an integrated quasicrystal interferometer which sensitively probes disorder. All modes are engineered to exhibit approximately the same confinement factor in the predominant thermo-optic medium (e.g., silicon) and for constraining the transverse spatial-mode and polarization degrees of freedom. Silicon photonic quasicrystal interferometry is used for secure hardware applications.

This magnetization rotating element comprises a wiring layer and a first ferromagnetic layer connected to the wiring layer, and the wiring layer includes a quasicrystal.

The present invention relates to a composite comprises a first binder (B1) and a first particle component (C1) comprising quasicrystal; and the composite comprises particles having an elongated form. The invention further relates to a method for producing a composite and use.

The utility model provides a wafer separation device and wafer processing equipment, belongs to the technical field of silicon carbide crystal processing, and solves the problem of poor wafer separation mode in the prior art. The device comprises a carrier, the carrier is provided with a material area, and the material area is used for accommodating crystals; the air blowing mechanism is provided with an air blowing end, the air blowing end is located on the periphery of the material area, and the air blowing end faces the material area to output airflow; and the crystal holding mechanism is provided with a crystal holding piece, and the crystal holding piece acts on the material area so as to hold the wafer of the crystal. The blowing mechanism is arranged to enable the blowing end to face the periphery of the material area, so that when the crystal is placed in the material area, the blowing end can be aligned with the wafer part needing to be stripped on the crystal to execute blowing operation, and the blowing end outputs high-pressure airflow, so that a stripping layer in the crystal is damaged, and fragmentation is realized; the service life of the blowing mechanism is longer than that of an existing ultrasonic vibrator.

The invention relates to a method for lightweighting and / or design of an additively manufactured article. The invention also relates to a computer program product suitable for carrying out the method of the invention and to an additively manufactured article obtainable by all methods according to the invention following the lead of the independent claim. The method comprises the step(s) of filling and / or building with quasicrystalline structures each of one or more constituent article parts. The additively manufactured article obtainable by carrying out the method comprises quasicrystalline structures and / or quasiperiodic minimal surface fillers and / or quasiperiodic minimal surface design structures and / or non-periodic minimal surface design structures and / or non-periodic minimal surface fillers. The invention also relates to the use of skeleton graphs for pre-processing in an additive manufacturing process.

Nanoengineered materials are disclosed for Low Energy Nuclear Reactions (LENRs). The nanoengineered materials include quasicrystals and quasicrystal approximants. The energy landscape of these materials is designed to increase a tunneling probability of atoms that participate in a fusion reaction. The nanoengineered materials are designed to have arrangements of atoms in which there are active sites in the material for LENR. The active sites may include networks of double wells designed into the material. In some examples, the design also limits the degrees of freedom for atoms in ways that increase a tunneling probability for tunneling of atoms into sites where fusion occurs.

The invention relates to the technical field of heat management of new energy automobiles, in particular to a quasi-crystal-based composite heat conduction material, a solid-state composite thermal diode and a preparation method. The composite heat conduction material is of a structure with at least two layers and comprises a quasi-crystal material base body layer and a thermoelectric material layer. Wherein the material of the quasi-crystal material matrix layer is an Al-Cu-Fe-based quasi-crystal material, and the material of the thermoelectric material layer is a Cu-Ag-Se-based thermoelectric material; the quasi-crystal material has a regular 20-surface symmetry; under the condition of heat conduction, an asymmetric thermal resistance network structure is arranged between the quasi-crystal material matrix layer and the thermoelectric material layer. The composite heat conduction material can form an asymmetric thermal resistance network structure through the characteristics that the thermal conductivity of the quasicrystal material matrix layer is positively correlated with the temperature and the thermal conductivity of the thermoelectric material layer is negatively correlated with the temperature, and the asymmetric thermal resistance network structure can improve the thermal rectification ratio of the thermal composite heat conduction material.

Provided is an oscillator capable of detecting the ambient temperature before the temperature of a crystal oscillator changes, preventing the correction delay of frequency-temperature characteristics, and reducing the hysteresis of the frequency-temperature characteristics. In a surface mount type oscillator, an ambient temperature detection sensor (15) for detecting temperature in order to correct frequency temperature characteristics is provided on a substrate (1) on which a plurality of circuits are mounted, the ambient temperature detection sensor (15) being disposed closer to a metal cover (2) than a reference crystal oscillator (11) provided with a crystal piece and other circuits. The temperature is detected via a heat-conducting copper foil (16) welded to the metal cover (2) by a welding part (17), and the detected temperature is used to correct the frequency-temperature characteristics.

The invention relates to an activation-free high-capacity Ti-Zr-Ni quasicrystal / amorphous complex phase hydrogen storage alloy, which belongs to the technical field of hydrogen storage alloy materials, and the system can form a quasicrystal structure with high-density tetrahedral gaps, and provides a new direction for solid hydrogen storage materials. The invention provides a Ti-Zr-Ni-based hydrogen storage alloy, the chemical formula of the hydrogen storage alloy is Ti < x > Zr < y > Ni < z >, x, y and z in the formula are percentages, x is equal to 40, y is greater than or equal to 30 and less than or equal to 50, z is greater than or equal to 10 and less than or equal to 30, and x + y + z is equal to 100. According to the Ti-Zr-Ni-based hydrogen storage alloy provided by the invention, the hydrogen storage titanium alloy with high activation performance and high hydrogen absorption capacity is obtained by means of component design and preparation process improvement, and the hydrogen absorption capacity within 60s reaches up to 85% of the maximum hydrogen storage capacity.

The invention discloses a device and method for detecting the optical axis direction of a crystal, and the method comprises the steps: enabling a standard crystal with the known optical axis direction to be positioned and installed on a standard crystal positioning tool according to a selected direction, and enabling a to-be-detected crystal to be positioned and installed on an optical element positioning tool; the overlook vision camera records a cross wire image formed by two parallel straight lines and a straight line perpendicular to the two straight lines and appearing on the to-be-detected crystal. The optical axis direction of the to-be-detected crystal can be accurately determined by overlooking the change of the two parallel straight lines of the cross wire image recorded by the visual camera, and the method is extremely simple and effective, so that the crystal can be effectively prevented from being loaded into a crystal frame in a wrong direction, the subsequent assembly process is effectively prevented from being carried out on the basis of errors, and the production efficiency is improved. Waste of manpower and material resources is avoided; moreover, by adopting the device and the method for detecting the optical axis direction of the crystal, electric automatic control can be very easily realized, so that automatic detection of the optical axis direction of the crystal is realized, and the detection efficiency is greatly improved.

A method for preparing a large area parallel oriented ten-order quasicrystal approximate phase micron tube belongs to the field of metal materials. The invention adopts vacuum induction melting method to prepare equiatomic ratio Al 20 Si 20 Mn 20 Fe 20 Ga 20 The alloy ingot is then induction heated and melted in a vacuum single-roll copper wheel strip-spinning device to prepare an alloy strip, and a large area of ​​parallel oriented Al is obtained on the free surface of the strip. 18.8 Si 20.6 Mn 22.7 Fe 26.6 Ga 11.3 Quasicrystal-like microtubes. Furthermore, nanoindentation measurements revealed that the microtubes possessed an optimal hardness-Young's modulus combination, reaching 10.9 GPa and 189.3 GPa, respectively, demonstrating superior mechanical properties. The present invention is advantageous in that large-scale, parallel-oriented, decadic quasicrystal-like microtubes were prepared for the first time. The preparation method is simple, easy, and readily mass-produced, providing an effective path for the large-scale preparation of quasicrystal-related tubular materials. The microtubes combine the characteristics of quasicrystals, high-entropy alloys, and micro- and nano-scale materials, and are therefore of significant value in developing their potential applications.

An oscillator capable of preventing a delay in correction of frequency temperature characteristics by measuring an ambient temperature before a temperature of a crystal vibration plate is changed and capable of reducing hysteresis of the frequency temperature characteristics.A surface-mount type oscillator provided with an ambient temperature measuring sensor 15 that measures a temperature for correcting frequency temperature characteristics, on a substrate 1 on which a plurality of circuits are mounted, in which the ambient temperature measuring sensor 15 is disposed closer to a metal cover 2 than a reference crystal oscillator 11 including a crystal vibration plate and other circuits, and measures a temperature via a copper foil 16 for thermal conduction that is soldered to the metal cover 2 by the soldered portion 17, and the measured temperature is used for correcting the frequency temperature characteristics.