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Power module metalized ceramic substrate and metallization method thereof

A technology for metallizing ceramics and ceramic substrates, applied in chemical instruments and methods, metal layered products, ceramic layered products, etc., can solve the problems of poor bonding strength, unsatisfactory solderability, rough surface, etc. The effect of strong heat dissipation, improved antioxidant capacity, and optimized function

Inactive Publication Date: 2013-01-30
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The advantages of this method are simple equipment, low cost, no need for secondary high temperature treatment, and easy mass production, but the disadvantages are poor bonding strength, rough surface and unsatisfactory solderability

Method used

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  • Power module metalized ceramic substrate and metallization method thereof
  • Power module metalized ceramic substrate and metallization method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: AlN substrate metallization

[0037] Select an AlN substrate with a size of 43×23×1mm, which is chemically roughened (by 40% HF 80ml / L+NH 4 F 30g / L with roughening solution), ultrasonically cleaned with absolute ethanol, dried, and then suspended in the vacuum chamber of the arc ion plating device facing the Cu target. Evacuate the vacuum chamber to 3 x 10 -3 After Pa, turn on the sample heating system and set the temperature to 300 °C. Introduce argon and maintain the vacuum chamber gas pressure at 2.0Pa. Start the hanger and make the AlN substrate rotate. Under the condition of negative bias voltage -800V (duty cycle adjusted to 0), the AlN substrate was glow-cleaned for 5 minutes; after that, the flow rate of argon gas was adjusted to a pressure of 0.6Pa in the vacuum chamber, and the Cu target power was turned on, and the control current was 70A ( The corresponding voltage is 21V), and continue ion bombardment (arc cleaning) on ​​the AlN substrate ...

Embodiment 2

[0039] Example 2: Al 2 o 3 Substrate metallization

[0040] Select Al with dimensions 50×30×6mm 2 o 3 The substrate is suspended in the vacuum chamber of the magnetron sputtering device facing the Cu target after polishing, degreasing, ultrasonic cleaning with absolute ethanol, and drying. The vacuum chamber is evacuated to 2×10 -3 After Pa, turn on the sample heating system and set the temperature to 300 °C. Introduce argon and maintain the vacuum chamber gas pressure at 2.0Pa. The negative electrode of the power supply is connected to the Cu target and grounded, and the positive electrode is connected to the vacuum chamber shell and the device suspension frame. Select an intermediate frequency power supply with a frequency of 20KHz, a current of 2A, and a voltage of 300V, start the hanger to rotate the substrate, and glow-clean the substrate for 5 minutes. The pressure of the vacuum chamber was adjusted to 0.3 Pa, and then the current was adjusted to 3.5 A, the voltag...

Embodiment 3

[0042] Example 3 SiC substrate metallization

[0043] Select a SiC substrate with a size of 33×20×3mm, and hang it facing the Ag target in the vacuum chamber of the arc ion plating device after surface polishing, degreasing, ultrasonic cleaning with absolute ethanol, and drying. Evacuate the vacuum chamber to 3 x 10 -3 After Pa, turn on the sample heating system and set the temperature to 350 °C. Introduce argon and maintain the vacuum chamber gas pressure at 2.0Pa. Start the hanger and make the SiC substrate rotate. The substrate was glow-cleaned for 5 minutes under the condition of negative bias voltage -800V (duty cycle adjusted to 0); after that, adjust the argon gas flow rate to the pressure of 0.6Pa in the vacuum chamber, turn on the power supply of the Ag target, and control the current to 65A (corresponding to The voltage is 21.5V), and the SiC substrate is continuously bombarded with ions (arc cleaning) for 5 minutes. Adjust the bias voltage to -400V (adjust the d...

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Abstract

The invention, relating to the field of ceramic surface modification, discloses a power module metalized ceramic substrate and a metallization method thereof. The method disclosed herein comprises the following steps: firstly depositing copper or silver with a thickness of 0.1-5 mum on the surface of a power module ceramic substrate by magnetron sputtering or arc ion plating; then depositing copper, silver, copper alloy or silver alloy with a thickness of 50-1000 mum by chemical plating or electroplating; and finally depositing silver, gold, tin or nickel with a thickness of 0.1-5 mum by magnetron sputtering or arc ion plating, or depositing a tin or nickel layer with a thickness of 2-5mum by chemical plating or electroplating. According to the invention, the metalized ceramic component obtained by the method disclosed herein has large current-carrying capacity, strong thermal conductivity and heat dissipation capability, good gas tightness, reliable and stable quality, etc., is easily welded with other metals or ceramics and composite materials, and can be used in the fields of vacuum devices, aerospace, aviation, radio and television, communication, metallurgy, medicine, high-energy physics, etc.

Description

technical field [0001] The invention relates to the field of ceramic surface modification, in particular to a metallized ceramic substrate of a power module and the use of magnetron sputtering and / or arc ion plating technology and electroless plating and / or electroplating technology to deposit thickness on the power module ceramic substrate The surface metallization method of the power module ceramic substrate with a composite metal coating of up to 1 mm is used to endow the ceramic substrate with high electrical conductivity (carrying current), high thermal conductivity and good welding performance, and achieve the purpose of modification. Background technique [0002] Today, with the rapid development of high technology, the high performance, high reliability and high density of electronic devices require that the substrate materials used must have good mechanical properties, electrical properties, heat dissipation properties and soldering properties. The way to achieve th...

Claims

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Application Information

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IPC IPC(8): B32B15/04B32B18/00C23C14/35C23C14/32C23C14/18C23C28/02
Inventor 杜昊肖伯律宋贵宏赵彦辉肖金泉熊天英
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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