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Composite polishing pad and preparation method thereof

A composite polishing and polishing pad technology, which is applied in the direction of grinding/polishing equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of difficult fixing of polishing pads, high hardness, scratches, etc., to improve hardness and flatness, reduce Less scratches and scratches

Active Publication Date: 2016-03-23
河南惠强新能源材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the particles added in the polishing pad are inorganic particles, such as diamond, silicon dioxide, zirconia, etc. These particles are too hard, and are not easy to fix in the polishing pad, and are easy to fix the surface of the polished object during the polishing process. scratches

Method used

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  • Composite polishing pad and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A preparation method of a composite polishing pad, comprising the following steps:

[0046] 1) Non-woven fabric pretreatment:

[0047] a) The fiber fineness is 1D and the area is 1m 2 And when the thickness is 1mm, the PET staple fiber needle-punched non-woven fabric with a weight of 100g is put into an oven, and the temperature is 170°C and the pressure is 1.8kPa. Cool down to room temperature to obtain a flattened non-woven fabric;

[0048] b) Immerse the flattened non-woven fabric obtained in step a) in a polyurethane adhesive with a viscosity of 200 mPa·s and a mass fraction of 5%, take it out after completely soaking, and air-dry at room temperature to obtain a non-woven fabric substrate;

[0049] 2) Prepare polymer solution:

[0050] 1) dissolving the polyurethane resin in N,N-dimethylformamide to prepare a uniform and transparent polyurethane solution with a mass fraction of 25%;

[0051] Ⅱ) adding cross-linked PMMA microspheres to the polyurethane solution o...

Embodiment 2

[0058] A preparation method of a composite polishing pad, comprising the following steps:

[0059] 1) Non-woven fabric pretreatment:

[0060] a) The fiber fineness is 0.1D and the area is 1m 2 And when the thickness is 1mm, the PET staple fiber needle-punched non-woven fabric with a weight of 180g is put into an oven, and the temperature is 190°C and the pressure is 1kPa. Cool to room temperature to obtain a flattened non-woven fabric;

[0061] b) Immerse the flattened non-woven fabric obtained in step a) in a polyurethane adhesive with a viscosity of 160 mPa·s and a mass fraction of 4%, take it out after completely soaking, and air-dry at room temperature to obtain a non-woven fabric substrate;

[0062] 2) Prepare polymer solution:

[0063] 1) dissolving the polyurethane resin in N,N-dimethylformamide to prepare a uniform and transparent polyurethane solution with a mass fraction of 22.5%;

[0064] Ⅱ) adding cross-linked PMMA microspheres to the polyurethane solution obta...

Embodiment 3

[0068] A preparation method of a composite polishing pad, comprising the following steps:

[0069] 1) Non-woven fabric pretreatment:

[0070] a) The fiber fineness is 0.05D and the area is 1m 2 And when the thickness is 1mm, the PET staple fiber needle-punched non-woven fabric with a weight of 200g is put into an oven, and the temperature is 210°C and the pressure is 0.2kPa. Cool down to room temperature to obtain a flattened non-woven fabric;

[0071] b) Immerse the flattened non-woven fabric obtained in step a) in a polyurethane adhesive with a viscosity of 120 mPa·s and a mass fraction of 3%, take it out after completely soaking it, and air-dry it at room temperature to obtain a non-woven fabric substrate;

[0072] 2) Prepare polymer solution:

[0073] 1) dissolving the polyurethane resin in N,N-dimethylformamide to prepare a uniform and transparent polyurethane solution with a mass fraction of 20%;

[0074] Ⅱ) adding cross-linked PMMA microspheres to the polyurethane s...

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Abstract

The invention discloses a preparation method of a composite polishing pad. The preparation method comprises the following steps that (1) non-woven fabric is preprocessed, specifically, (a) the non-woven fabric is put into a drying oven for flattening, (b) the flattened non-woven fabric is immersed into a glue solution and then is taken out after being infiltrated sufficiently, and a non-woven fabric substrate material is obtained; (2) a polymer solution is prepared, specifically, (I) a macromolecular elastomer is dissolved into a solvent, and a macromolecular elastomer solution is prepared; (II) polymer particles are added into the macromolecular elastomer solution, and the polymer solution is obtained; (3) the non-woven fabric is made into a pad, specifically, the non-woven fabric substrate material is infiltrated into the polymer solution and then is taken out after being infiltrated sufficiently, and unnecessary solutions on the surface of the non-woven fabric substrate material are scraped off; the non-woven fabric substrate material is immersed into coagulating bath for consolidation forming and then put into pure water for rinsing and finally dried to the constant weight, and an original polishing pad is obtained; and (4) the polishing pad is formed, specifically, after the surface of the original polishing pad is polished, cut and rubberized, and the finished polishing pad is obtained. By means of the preparation method, the composite polishing pad has a large polishing rate, and moreover the flatness of a polished object is good.

Description

technical field [0001] The invention relates to the field of preparation technology of grinding and polishing materials, in particular to a composite polishing pad and a preparation method thereof. Background technique [0002] Nowadays, with the society's pursuit of high performance and miniaturization of electronic smart products, the preparation of integrated circuits requires high integration and multi-layer wiring, all of which require higher precision on the surface of semiconductor wafers for integrated circuits of flatness. [0003] Currently, the technique used for global planarization of the semiconductor wafer surface is chemical mechanical polishing (Chemical Mechanical Polishing, CMP). Chemical mechanical polishing is a method of polishing the surface of the substrate to be polished by adding a slurry containing tiny abrasive particles and using a polishing pad. [0004] Patents CN103878707A and CN1914241B disclose a closed and mutual cell structure formed by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/24B24D18/00
CPCB24B37/245B24D18/0027
Inventor 王晓斌肖志明王松钊蔡朝辉
Owner 河南惠强新能源材料科技股份有限公司
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