159results about How to "Defect minimization" patented technology

An electrophoretic medium (100) comprises at least one type of particle (108) suspended in a suspending fluid (106) and capable of moving therethrough on application of an electric field to the medium, the particles (108) including at least one electrophoretically mobile specularly reflective particle.

A method for performing model based optical proximity correction (MBOPC) and a system for performing MBOPC is described, wherein the process model is decomposed into a constant process model term and a pattern dependent portion. The desired wafer target is modified by the constant process model term to form a simulation target that is used as the new target within the MBOPC process. The pattern dependent portion of the model is used as the process model in the MBOPC algorithm. This results final mask designs that result in improved across-chip line width variations, and a more robust MBOPC process.

The present invention relates to an LED lamp in which, because the lamp has therein a heat dissipation transfer member and the power source base thereof is made of materials including polycarbonate, etc. with a high emission rate of radiation so as to enhance its surface heat dissipation constant, the power source base has sufficient heat dissipation performance and, thus, a separate insulation circuit is not necessary, thereby improving reliability and productivity of the lamp as well as reducing the cost of manufacturing.

To this end, the present invention provides an LED lamp comprising one or more LEDs mounted on a PCB, a floodlight cover that transmits light from the LEDs, and a power source base coupled to the floodlight cover and having a terminal at one end thereof, wherein the power source base is made of an insulation material; and the LED lamp also comprises a heat dissipation transfer member that has a heat sink in contact with the PCB on which the LEDs are mounted, and is formed and installed so as to overlap with and be in tight contact with the inner face of either the power source base or the floodlight cover or both.

The present invention provides a curved display manufacturing method which can prevent phenomenon that outer surface edges of substrates are broken or pared unevenly while etchant is being injected, a curved display panel manufacturing using the same, and a curved display panel manufactured by the same. For this, a curved display panel manufacturing apparatus includes: an etching portion for partially paring outer portions of a first substrate and a second substrate such that thicknesses thereof are reduced to predetermined thicknesses; and a bending portion for bending the partially pared flat liquid crystal panel to a desired curved shape. The etching portion includes: at least one edge protection cover which is disposed on outer surface edge of the first substrate and the second substrate; and an injection nozzle which injects etchant to outer surfaces of the first substrate and the second substrate and to the edge protection cover.

A method for forming a device isolation structure of a semiconductor device using at least three annealing steps to anneal a flowable insulation layer is presented. The method includes the steps of forming a hard mask pattern on a semiconductor substrate having active regions exposing a device isolation region of the semiconductor substrate; etching the device isolation region of the semiconductor substrate exposed through the hard mask pattern, and therein forming a trench; forming a flowable insulation layer to fill a trench; first annealing the flowable insulation layer at least three times; second annealing the first annealed flowable insulation layer; removing the second annealed flowable insulation layer until the hard mask pattern is exposed; and removing the exposed hard mask pattern.

Provided are a memory device and a method of manufacturing the same. Memory cells of the memory device are formed separately from first electrode lines and second electrode lines, wherein the second electrode lines over the memory cells are formed by a damascene process, thereby avoiding complications associated with CMP being excessively or insufficiently performed on an insulation layer over the memory cells.

The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

The present invention relates to a camera module having an auto focus function, the module including a lens unit having at least one lens, a barrel into which the lens unit is inserted, and connected by a VCM (Voice Coil Motor) actuator, and an image sensor discretely positioned from the lens unit to convert light having passed the lens unit to an electrical signal, where the VCM actuator includes a gap of a reference distance position value which is a position of an object catering to a lens focal length according to the camera module, and information on a focus-met lens position value, and adjusts an initial position of the lens by using the gap of reference distance position value of the lens position value during operation of the camera module.

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

The present invention relates to washing machines, and more particularly, to a washing machine having a lamp device with LED (76,78) mounted to a gasket (40) for lighting an inside of the washing machine, and a method for controlling the same. For this the present invention provides a washing machine including a cabinet (2) having a door (8) on a front, a tub (20) in the tub for holding washing water, a drum (30) rotatably mounted in the tub (20), a gasket (40) mounted to connect openings of the door (8) and the tub (20), and a lamp device (50) provided to the gasket (40). Moreover the present invention provides a method for controlling a washing machine including a first step for turning on LEDs (76,78) in a lamp device (50) for lighting an inside of the washing machine upon reception of an order of turning on a lighting through an LED input unit (14), and a second step for turning off the LEDs (76,78) upon reception of an order of turning off the lighting through the LED input unit (14) after the first step.

Disclosed is a display apparatus. The display apparatus includes a first substrate having a plurality of pixels and a second substrate facing the first substrate. A concave-convex section is formed on at least one of the first and second substrates. The substrate having the concave-convex section is a flexible substrate. The substrate integrally formed with the concave-convex section is manufactured by applying a transfer method to an FRP substrate.

Provided is an LED lamp using a nano-scale LED electrode assembly. The LED lamp using the nano-scale LED electrode assembly may solve limitations in which, when a nano-scale LED device according to the related art stands up and is three-dimensionally coupled to an electrode, it is difficult to allow the nano-scale LED device to stand up, and when the nano-scale LED devices are coupled to one-to-one correspond to electrodes different from each other, product quality is deteriorated. Thus, the nano-scale LED device having a nano unit may be connected to the two electrodes different from each other without causing defects, and light extraction efficiency may be improved due to the directivity of the nano-scale LED devices connected to the electrodes. Furthermore, deterioration in function of the LED lamp due to the defects of a portion of the nano-scale LEDs provided in the LED lamp may be minimized, and the LED lamp may have a flexible structure and shape by using the nano-scale LED electrode assembly of which a portion is deformable according to the used purpose or position of the LED lamp.

A folding portable device is provided, in which a connecting mechanism that mechanically connects a first housing and a second housing to each other includes a plurality of first members including a first plane and two engaging pieces provided on the first plane, and a plurality of second members including a second plane, an engaging groove provided on the second plane for the engaging piece to be slidably fitted, and a stopper. The first member is engaged with one of the second members by means of one of the two engaging pieces, and with another second member adjacent to the one second member by means of the other of the two engaging pieces, and the connecting mechanism includes therein a hollow portion formed along an extending direction of the engaging groove, and the hollow portion includes therein the flexible printed circuit board.

As a conventional problem, welding on surface-treated material, such as a zinc-coated steel plate, considerably generates air holes including blowholes and also generates lots of spatters. Present invention provides a method of controlling arc welding performed in a manner that a short-circuit period, in which a short circuit is generated between a welding wire and an object to be welded, and an arc period, in which an arc is generated after release of the short circuit, are repeated alternately. According to the method, welding current is increased from an arc-regeneration-before current to a first welding current at a detection of release of the short circuit such that an increase gradient of the welding current becomes not less than 750 A/msec. This suppresses generation of air holes and spatters in welding work on a surface-treated material, such as a zinc-coated steel plate.

A protective coating is provided for components of an immersion lithography tool, in which at least a portion of a component exposed to the immersion fluid is protected by a thin, hard protective coating, comprising materials such as silicon carbide, diamond, diamond-like carbon, boron nitride, boron carbide, tungsten carbide, aluminum oxide, sapphire, titanium nitride, titanium carbonitride, titanium aluminum nitride and titanium carbide. The protective coating may be formed by methods such as CVD, PECVD, APCVD, LPCVD, LECVD, PVD, thin-film evaporation, sputtering, and thermal annealing in the presence of a gas. The protective coating preferably has a hardness greater than a Knoop hardness of about 1000 and more preferably greater than about 2000, or a Moh hardness greater than about 7, more preferably greater than about 9. The protective coating minimizes defects due to mechanical wear of scanner components.

A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.

A method of forming a composite powder coating comprises depositing multiple layers of a powder coating composition onto a substrate, wherein adjacent layers are formed of a different powder coating composition; and curing the multiple layers of the powder coating composition in a single thermal curing step. The layers can be used to protect power generation equipment from aqueous corrosion, particle erosion, slurry erosion, fretting, and foulig.

In a thin-film field effect transistor with a MIS structure, the materials of which the semiconductor and insulating layers are made are polymers which are dissolvable in organic solvents and have a weight average molecular weight of more than 2,000 to 1,000,000. Use of polymers for both the semiconductor layer and insulating layer of TFT eliminates such treatments as patterning and etching using photoresists in the prior art circuit-forming technology, reduces the probability of TFT defects and achieves a reduction of TFT manufacture cost.

A ceramic firing furnace is provided. A uniform gas atmosphere is formed in the ceramic firing furnace to thus minimize a defective ceramic substrate when the ceramic substrate is fired. The ceramic firing furnace includes: a case having an internal space in which a shaped body is disposed; a heating element disposed in the interior of the case and radiating heat; and a plurality of air supply units fastened through the case such that the plurality of air supply units are rotatable by an external force, and supplying a gas to the internal space of the case.

The invention relates to the field of graphene composite materials and discloses a nano silver loaded graphene antibacterial composite material and a preparation method thereof. A single-layer graphene oxide solution is obtained through a secondary ultrasonic dispersion technology and a discontinuous sheet layer is prevented; a carbon cake formed by mutually mixing a plurality of layers of graphene oxide sheets is innovatively subjected to secondary hydrothermal method reaction; green reduction agents including glucose and ascorbic acid and a green stabilizer soluble starch are adopted respectively and the hydrothermal method reaction is matched, so that the reduction rate is extremely improved and a sealing system with relatively high temperature and inner pressure is adopted; the recycling of dehydrated p conjugation is also promoted and the minimization of defects is facilitated; after heat treatment is carried out, the structure of graphene is easy to recover; the antibacterial activity of free Ag nanoparticles is remained in the composite material. The loading amount of silver particles in the nano silver loaded graphene antibacterial composite material reaches 58.0 percent and the antibacterial rate on escherichia coli reaches 99.9 percent.