Thin-film field effect transistor and making method
a technology of field effect transistor and thin film, which is applied in the direction of transistors, solid-state devices, thermoelectric devices, etc., can solve the problems of imposing a certain limit in reducing the cost of tft manufacture, causing slight defects, and ordinary metal-based semiconductors used in the art cannot avoid the problem, etc., to achieve greater carrier mobility, minimize defects, and reduce the effect of manufacturing cos
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[0027] There were furnished cyanoethyl pullulan having a substitution of cyanoethyl of 85.2 mol % (CyEPL, Shin-Etsu Chemical Co., Ltd., CR-S, Mw=49,000) as an insulating layer material and poly(3-hexylthiophene) (P3HT, Aldrich, Mw=87,000) as an organic semiconductor layer material. The organic solvent in which P3HT was dissolved was chloroform, in which CyEPL was insoluble. A TFT was fabricated using these materials and evaluated as follows.
[0028] On a glass (SiO2) substrate, a gate electrode was formed by depositing Ti to a thickness of 5 nm and then Au to a thickness of 20 nm, using an RF sputtering technique at room temperature and a back pressure of 10−4 Pa.
[0029] An insulating layer was then formed on the gate electrode by dissolving 15 wt % CyEPL as the insulating layer material in N-methyl-2-pyrrolidone, passing the solution through a 0.2-micron membrane filter, spin coating the solution, and drying at 100° C. for one hour.
[0030] A semiconductor layer of 50 nm thick was th...
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