A method for increasing the phase transition temperature of cu2se-based thermoelectric materials

A technology of phase transition temperature and thermoelectric materials, applied in the direction of binary selenium/tellurium compounds, etc., can solve the problems of degraded thermoelectric performance and instability, and achieve the effect of increasing phase transition temperature, fast speed and low cost

Active Publication Date: 2019-04-26
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

β-Cu 2 Se is unstable, Cu + Very active, easy to migrate, and easy to react with electrode materials, thus deteriorating its thermoelectric performance

Method used

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  • A method for increasing the phase transition temperature of cu2se-based thermoelectric materials
  • A method for increasing the phase transition temperature of cu2se-based thermoelectric materials
  • A method for increasing the phase transition temperature of cu2se-based thermoelectric materials

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Embodiment 1

[0040] A way to improve Cu 2 Method for phase transition temperature of Se-based thermoelectric materials, Cu 2 The chemical composition of Se-based thermoelectric materials is Cd 0.004 Cu 1.996 Se, its technological process see figure 1 , which includes the following steps:

[0041] 1) Weigh the high-purity raw materials Cd powder, Cu powder and Se powder at a molar ratio of 0.004:1.996:1, slowly pour them into an agate mortar and mix them, and grind them manually for 10 minutes, then transfer the powders to diameters Carry out cold pressing in a 10mm steel mold, the cold pressure is 80MPa, and the holding time is 15min to obtain the column body raw material;

[0042]2) Remove the obtained cylinder raw material from the mold, place it in a quartz glass tube for vacuum sealing, and use argon gas to ventilate the quartz glass tube for 2 to 3 times before sealing. When sealing, the air pressure in the quartz glass tube is <100Pa. Finally, ignite the bottom of the quartz gla...

Embodiment 2

[0046] A way to improve Cu 2 Method for phase transition temperature of Se-based thermoelectric materials, Cu 2 The chemical composition of Se-based thermoelectric materials is Cd 0.008 Cu 1.992 Se, its technological process see figure 1 , including the following steps:

[0047] 1) Weigh the high-purity raw materials Cd powder, Cu powder and Se powder at a molar ratio of 0.008:1.992:1, slowly pour them into an agate mortar and mix them, and grind them manually for 12 minutes, then transfer the powders to diameters Carry out cold pressing in a 15mm steel mold, the cold pressure is 160MPa, and the holding time is 12min to obtain the column raw material;

[0048] 2) Remove the obtained cylinder raw material from the mold, place it in a quartz glass tube for vacuum sealing, and use argon gas to ventilate the quartz glass tube for 2 to 3 times before sealing. When sealing, the air pressure in the quartz glass tube is <100Pa. Finally, ignite the bottom of the quartz glass tube ...

Embodiment 3

[0052] A way to improve Cu 2 Method for phase transition temperature of Se-based thermoelectric materials, Cu 2 The chemical composition of Se-based thermoelectric materials is Cd 0.012 Cu 1.988 Se, its technological process see figure 1 , including the following steps:

[0053] 1) Weigh the high-purity raw materials Cd powder, Cu powder and Se powder at a molar ratio of 0.012:1.988:1, slowly pour them into an agate mortar and mix them, grind them manually for 15 minutes, and transfer the powders to diameters Carry out cold pressing in a steel mold of 16mm, the cold pressure is 240MPa, and the holding time is 10min to obtain the column raw material;

[0054] 2) Remove the obtained cylinder raw material from the mold, place it in a quartz glass tube for vacuum sealing, and use argon gas to ventilate the quartz glass tube for 2 to 3 times before sealing. When sealing, the air pressure in the quartz glass tube is <100Pa. Finally, ignite the bottom of the quartz glass tube di...

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Abstract

The invention discloses a method for increasing the phase inversion temperature of a Cu2Se base thermoelectric material. A Cd element is mixed into a Cu position of Cu2Se, and the method specifically comprises the following steps that 1, raw materials are weighed on the basis of a stoichiometric ratio of CdxCu2-xSe(0.004<=x<=0.012), and tableted after being mixed to be uniform; 2, column bodies obtained after tableting are subjected to vacuum sealing, then, self-propagating reaction is caused, and after the reaction is completed, natural cooling is performed; 3, reaction products obtained in the step 2 are ground to be fine powder, then, plasma activated sintering is performed, and a dense CdxCu2-xSe block is obtained. The method is simple, high in repeatability, capable of effectively increasing the phase inversion temperature of the Cu2Se base thermoelectric material, and suitable for being applied and popularized.

Description

technical field [0001] The invention belongs to the technical field of new material preparation, in particular to a method for improving Cu 2 A method for the phase transition temperature of Se-based thermoelectric materials. Background technique [0002] With the gradual reduction of fossil energy and the increasingly serious environmental pollution, the development of new, environmentally friendly renewable energy and energy conversion technology has attracted great attention from all over the world. Among them, the environmentally friendly thermoelectric conversion technology that directly converts thermal energy into electrical energy has attracted people's attention. Thermoelectric conversion technology utilizes the Seebeck effect and Peltier effect of semiconductor materials to achieve direct conversion between thermal energy and electrical energy. Its applications mainly include thermoelectric power generation and thermoelectric refrigeration. Compared with the trad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04
Inventor 李涵张海龙唐新峰苏贤礼
Owner WUHAN UNIV OF TECH
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